2scr375
Abstract: No abstract text available
Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)
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2SCR375P
SC-62)
OT-89>
800mA/80mA)
R1102A
2scr375
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ZXTN25060BZTA
Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZXTN25060BZ
D-81541
ZXTN25060BZTA
TS16949
ZXTN25060BZ
SOT89 transistor marking 5A
marking 1c7
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FZT694B
Abstract: DSA003714
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 - Volts - (Volts) IC/IB =10 0.6 0.6 0.2 0.1 1 1.4 0.01 10 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC
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OT223
FZT694B
200mA
100mA,
200mA,
400mA,
50MHz
FZT694B
DSA003714
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HN1C07F
Abstract: No abstract text available
Text: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA
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HN1C07F
400mA
HN1C07F
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Untitled
Abstract: No abstract text available
Text: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE ) linearity : hFE(2) = 25 (min) at VCE = 6V, IC = 400mA
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HN1C07F
400mA
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Untitled
Abstract: No abstract text available
Text: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA
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HN1C07F
400mA
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HN1C07F
Abstract: No abstract text available
Text: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA
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HN1C07F
400mA
HN1C07F
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IC/IB=200 -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=100 0.8 0.8 IC/IB =10 0.6 IC/IB=100 0.6 E C ABSOLUTE MAXIMUM RATINGS. 0.4 0.2 PARAMETER 0.2 0.01 0.1 1 0.01 10 + 1.4 0.1 1 10 + +100°C +25°C
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OT223
FZT694B
200mA
100ms
100us
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4374 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=400mA 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1
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KTC4374
OT-89
500mW
400mA
200mA
200mA,
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Untitled
Abstract: No abstract text available
Text: FJA4310 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
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FJA4310
FJA4210
FJA4310
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FJA4310
Abstract: FJA4210 SC-65 ASME-14
Text: FJA4310 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25°C unless otherwise noted
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FJA4310
FJA4210
FJA4310
FJA4210
SC-65
ASME-14
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Untitled
Abstract: No abstract text available
Text: KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to KSA1695 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC4468
KSA1695
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FJA4210
Abstract: FJA4310
Text: FJA4310 FJA4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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FJA4310
FJA4210
FJA4210
FJA4310
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KSA1695
Abstract: KSC4468
Text: KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to KSA1695 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC4468
KSA1695
KSA1695
KSC4468
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Untitled
Abstract: No abstract text available
Text: KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=8A High Power Dissipation Wide S.O.A Complement to KSA1695 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC4468
KSA1695
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FJA4210
Abstract: FJA4310
Text: FJA4310 FJA4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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FJA4310
FJA4210
FJA4210
FJA4310
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FJAF4210
Abstract: FJAF4310
Text: FJAF4310 FJAF4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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FJAF4310
FJAF4210
FJAF4210
FJAF4310
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Untitled
Abstract: No abstract text available
Text: FJA4310 FJA4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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FJA4310
FJA4210
FJA4310OTU
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J4310F-Y
Abstract: J4310F J4310 J4310F-O
Text: FJAF4310 FJAF4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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FJAF4310
FJAF4210
FJAF4310
FJAF4310OTU
FJAF4310YTU
J4310F-Y
J4310F
J4310
J4310F-O
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KSA1695
Abstract: KSC4468
Text: KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=8A High Power Dissipation Wide S.O.A Complement to KSA1695 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC4468
KSA1695
KSA1695
KSC4468
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r050 TRANSISTOR
Abstract: No abstract text available
Text: FJA4210 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25°C unless otherwise noted
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FJA4210
FJA4210
FJA4310
r050 TRANSISTOR
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2sc4118
Abstract: marking IAY 2SA1588
Text: TOSHIBA 2SC4118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 18 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS Excellent hjpg Linearity hFE(2) = 25 (Min.) (VCE = 6V, IC = 400mA)
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2SC4118
2SA1588
400mA)
961001EAA1
100mA
400mA
100mA,
2sc4118
marking IAY
2SA1588
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D3055
Abstract: CJD3055 cev code CJD2955
Text: Central CJD2955 PNP CJD3055 NPN Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CJD2955, CJ D3055types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a
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CJD2955
CJD3055
CJD2955,
D3055types
400mA
500mA,
0gg17m7
0DD174Ã
D3055
cev code
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marking IAY
Abstract: 2SA1182 2SC2859
Text: TO SH IBA 2SC2859 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS 2SC2859 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • 2.5 + — 0.5 0.3 Excellent hjpg Linearity : hFE (2) = 25(Min.) (VCE = 6V, Ic = 400mA)
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2SC2859
400mA)
2SA1182.
marking IAY
2SA1182
2SC2859
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