MG800FXF1JMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
|
|
TTA2097
|
|
Toshiba Electronic Devices & Storage Corporation
|
PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
|
|
MG800FXF1ZMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
|
|
TLP5702H
|
|
Toshiba Electronic Devices & Storage Corporation
|
Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
|
|
TLP5705H
|
|
Toshiba Electronic Devices & Storage Corporation
|
Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
|
|