NPN PLANAR RF TRANSISTOR Search Results
NPN PLANAR RF TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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GRM-KIT-OVER100-DE-D | Murata Manufacturing Co Ltd | 0805-1210 over100uF Cap Kit |
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LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
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LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU |
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NPN PLANAR RF TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SC1947 equivalent
Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
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OCR Scan |
2SC1947 175MHz 175MHz 2SC1947 2SC1947 equivalent RF Power Amplifiers 1P H transistor | |
transistor D 2331
Abstract: 2331 TRANSISTOR T31B
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OCR Scan |
2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B | |
2SC1729
Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
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OCR Scan |
2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE | |
2SC1324Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES • |
OCR Scan |
2SC1324 2SC1324 770MHz | |
2sc1968Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES • |
OCR Scan |
2SC1968A 2SC1968A 470MHz 470MHz. 2sc1968 | |
12w 5dContextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES |
OCR Scan |
2SC3629 2SC3629 520MHz, 12w 5d | |
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES • |
OCR Scan |
2SC1968A 2SC1968A 470MHz 470MHz. | |
Transistor BFw 92
Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
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OCR Scan |
596/0776A1 470pF 20x8x0 Transistor BFw 92 TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor | |
2SC730Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm |
OCR Scan |
2SC730 2SC730 150MHz | |
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. D im ensions in mm FEATURES • |
OCR Scan |
2SC1324 2SC1324 770MHz | |
2SC730
Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
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OCR Scan |
2SC730 2SC730 150MHz TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band | |
2SC2694
Abstract: DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent
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OCR Scan |
2SC2694 2SC2694 175MHz 175MHz, DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent | |
2SC2237
Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k
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OCR Scan |
2SC2237 175MHz 175MHz. 175MHz 2SC2237 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k | |
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES • |
OCR Scan |
2SC2540 2SC2540 175MHz 175MHz, | |
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Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES • |
OCR Scan |
2SC2131 500MHz 150MHz 150MHz 450MHz) 100pF, 01/iF, 200/iF 01/iF | |
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES • |
OCR Scan |
2SC2097 2SC2097 30MHz 30MHz, 2k3k5k10k | |
2SC1969Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i' |
OCR Scan |
2SC1969 2SC1969 27MHz O-220 27MHz. 150mA | |
2SC2086
Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
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OCR Scan |
2SC2086 2SC2086 27MHz 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor | |
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band portable or hand-held radio applications. Dimensions in mm |
OCR Scan |
2SC2056 2SC2056 175MHz | |
2SC2695
Abstract: RF POWER TRANSISTOR TIA 80
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OCR Scan |
2SC2695 520MHz 520MHz. RF POWER TRANSISTOR TIA 80 | |
2SC1946A
Abstract: C 1946A RF TRANSISTOR
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OCR Scan |
2SC1946A 2SC1946A C 1946A RF TRANSISTOR | |
2SC2055Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC20S5 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES • High power gain: Gpe > 1 3 d B |
OCR Scan |
2SC20S5 2SC2055 175MHz --j25iJ 5k7k10k 2SC2055 | |
2sc1968a
Abstract: 2sc1968
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OCR Scan |
2SC1968A 2SC1968A 470MHz 470MHz. T-31E 470MH 2sc1968 | |
RF NPN POWER TRANSISTOR l band
Abstract: transistor su 312
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OCR Scan |
2SC1968 470MHz 470MHz. GD1754b 2SC1968 RF NPN POWER TRANSISTOR l band transistor su 312 |