NPN MEDIUM POWER TRANSISTOR IN A SOT PACKAGE Search Results

Transistor B 1566

Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
Contextual Info: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application

BD179

Contextual Info: BD179  NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching

BD179

Contextual Info: BD179 NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching

BD179

Contextual Info: BD179 NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION GENERAL PURPOSE SWITCHING ■ DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching

16-2-472

Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Contextual Info: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.

XS 630 B

Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
Contextual Info: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.

E8080

Contextual Info: BD179 NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM

DRF1601

Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
Contextual Info: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.

smd transistor k 1540

Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
Contextual Info: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.

smd transistor zl

Abstract: rf transistor mar 8 DRF1401 THN5601B
Contextual Info: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

SP19A

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

SP19A

Abstract: AYW marking code IC BSP16T1 BSP19AT1G
Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

TRANSISTOR D54

Abstract: d54 marking TRANSISTOR B54
Contextual Info: NPN medium power transistor Die no. D-54 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm MPT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 I1.5( — TY ‘ 0.1 collector-to-emitter breakdown voltage, BVCE0 = 80 V (min) at

RTO BH

Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
Contextual Info: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at

Contextual Info: NPN medium power transistor Die no. D-15 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm SST3 Features l.9±0.Z 0.95 0.95 available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at

Contextual Info: Die no. D-54 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm M PT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 4 . 5 —o ) I l .6 ± 0 .l 1 .5 -0 .1 ~ ,m collector-to-emitter breakdown

TRANSISTOR marking 489 code

Contextual Info: A Product Line of Diodes Incorporated FMMT489 30V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 30V  Case: SOT-23  IC = 1A high Continuous Collector Current  Case material: Molded Plastic. “Green” Molding Compound.

IC 7447

Abstract: 10358 2SC5751 NE677M04 NE677M04-T2 S21E 0 811 404 614
Contextual Info: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE677M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 The NE677M04 is housed in NEC's new low profile/flat lead

c 4468 power transistor

Abstract: IC 7447 2SC5751 NE677M04 NE677M04-T2 S21E 4260 transistor sot IC 4468
Contextual Info: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE677M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 The NE677M04 is housed in NEC's new low profile/flat lead

IC 7447

Abstract: c 4468 power transistor 2SC5751 NE677M04 NE677M04-T2-A S21E 7489 NEC 9418 transistor 7447 IC part number
Contextual Info: NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 NEC's NE677M04 is housed in NEC's new low profile/flat lead

POWER AND MEDIUM POWER TRANSISTOR

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ IC 7447 2SC5751 NE677M04 NE677M04-T2 S21E c 4468 power transistor
Contextual Info: NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 NEC's NE677M04 is housed in NEC's new low profile/flat lead

NE664M04

Abstract: 2SC5751
Contextual Info: PRELIMINARY DATA SHEET MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE677M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 The NE677M04 is housed in NEC's new low profile/flat lead