DSC4001
Abstract: marking C1s DSC400
Text: Tentative DSC4001 Total pages page DSC4001 Silicon NPN epitaxial planar type For general amplifier Marking Symbol : C1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSC4001
DSC4001
marking C1s
DSC400
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC9001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
DSC9001
DSA9001
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marking code c1s
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC2001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
DSC2001
DSA2001
marking code c1s
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dsa5001
Abstract: DSC5001 MARKING c1s
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC5001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001 • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
DSC5001
DSA5001
dsa5001
DSC5001
MARKING c1s
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Untitled
Abstract: No abstract text available
Text: DSC5001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001 DSC2001 in SMini3 type package Unit: mm • Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE sat
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DSC5001
DSA5001
DSC2001
UL-94
DSC5001Ã
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DSC9001
Abstract: DSA9001 ZJC00441BED marking C1s
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 • Features Package High forward current transfer ratio hFE with excellent linearity Eco-friendly Halogen-free package
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2002/95/EC)
DSC9001
DSA9001
DSC9001
DSA9001
ZJC00441BED
marking C1s
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Untitled
Abstract: No abstract text available
Text: DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 DSC5001 in SSMini3 type package Unit: mm • Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE sat
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DSC9001
DSA9001
DSC5001
UL-94
DSC9001Ã
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DSC2001
Abstract: DSA2001 ZJC00438BED marking C1s npn marking C1S
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC2001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 • Features Package High forward current transfer ratio hFE with excellent linearity Eco-friendly Halogen-free package
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2002/95/EC)
DSC2001
DSA2001
DSC2001
DSA2001
ZJC00438BED
marking C1s
npn marking C1S
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 DSC5001 in SSMini3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DSC9001
DSA9001
DSC5001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC2001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 • Features Package Low collector-emitter saturation voltage VCE(sat) High forward current transfer ratio hFE with excellent linearity
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DSC2001
DSA2001
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MARKING c1s SOT23-6
Abstract: C1R SOT23
Text: DSC2001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 Unit: mm • Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant
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DSC2001
DSA2001
UL-94
DSC2001Ã
MARKING c1s SOT23-6
C1R SOT23
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DSC5001
Abstract: DSA500 marking code c1s *5001*FE
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC5001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001 DSC2001 in SMini3 type package • Features Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DSC5001
DSA5001
DSC2001
DSC5001
DSA500
marking code c1s
*5001*FE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC4001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA4001 DSC2001 in NS through hole type package • Package Features Code NS-B2-B-B High forward current transfer ratio hFE with excellent linearity
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DSC4001
DSA4001
DSC2001
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DSC5001
Abstract: marking code c1s 460-210 DSA5001 ZJC00440BED DSC-5001
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC5001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA5001 • Features Package High forward current transfer ratio hFE with excellent linearity Eco-friendly Halogen-free package
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DSC5001
DSA5001
DSC5001
marking code c1s
460-210
DSA5001
ZJC00440BED
DSC-5001
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2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
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P10100EJ6V0SG00
2SK2396A
NEC 2SK2396A
k2396a
pc1658
2SC2407
P10100EJ6V0SG00
UAA 1006
k2396
K2597
Marking Code SAW MOS transistor
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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PU10015EJ04V0PF
transistor marking T79 ghz
marking code C1H mmic
marking code C3E SOT-89
upb1507
marking code C1G mmic
marking code C1E mmic
data book transistors 2SA
uPC2712
pc3215
transistor 2SA data book
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UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
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D-40472
I-20124
I-00139
D-30177
GB-MK14
D-81925
S-18322
F-78142
E-28007
UAA 1006
manual* cygnus sl 5000
transistor marking T79 ghz
PC1658G
NEC Ga FET marking code T79
gaas fet T79
pc1658
MC-7712
2SC5431
NEC U71
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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s0918
Abstract: d7c transistor marking N10
Text: r Z Z SGS-THOMSON ^ 7 # MIDlSB§ ilLieTriBl iD©i S0918 SMALL SIGNAL NPN TRANSISTOR Type Marking S0918 N10 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . SMALL SIGNAL VHF AMPLIFICATION AND
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S0918
OT-23
OT-23
s0918
d7c transistor
marking N10
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T0-92
Abstract: No abstract text available
Text: bfiF T> bSOHBQ m General Purpose Amplifiers and Switches continued Devices V CHHsmt) (Volts) Min NPN 30 MPSW01A PHP MPSW51A Min Max NATL SEMICON]) (DISCRETE) fT @ l e,- " », Hf e @ I c •c (mA) Max □ D 3 C1SSE 73T « N S C S mA (MHz) Min M Ì NF (ÍB)
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MPSW01A
NSDU01
PN2222
PN3566
PN3643
PN4141
TN2219
2N4125
BC213
BC214
T0-92
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marking p1r
Abstract: DO25 marking code P1R transistor marking t04 PMST5088 PMST5089
Text: Philips Semiconductors bbS3T31 ÜOES'IJïc? TQM W NPN general purpose transistors ” Product specification PMST5088; PMST5089 N AMER P H I L I P S / D I S C R E T E FEATURES APX b?E PIN CONFIGURATION • S-mini package • Low noise. DESCRIPTION NPN small signal transistor in a
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PMST5088;
PMST5089
OT323
PMST5088
PMST5089
marking p1r
DO25
marking code P1R
transistor marking t04
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toshiba 1908
Abstract: RN1908
Text: TOSHIBA RN1907-RN1909 TOSHIBA TRANSISTOR RM1QD7 • » ■ v ■ ar m g SILICON NPN EPITAXIAL TYPE PCT PROCESS RMIQfia u « ■ m m mm g RN1QDQ ■ « ■ v ■ «r v U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.
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RN1907-RN1909
RN2907-RN2909
RN1907
RN1909
toshiba 1908
RN1908
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Untitled
Abstract: No abstract text available
Text: X T U i m i TECHNOLOGY _ LT1364/LT1365 D ual and Q uad 70MHz, 1OOOV/|is O p Am ps F€RTUR€S DCSCRICTIOn • 70MHz Gain-Bandwidth ■ 1000V/us Slew Rale ■ 7.5mA Maximum Supply Current per Amplifier tional amplifiers with outstanding AC and DC perfor
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LT1364/LT1365
70MHz,
70MHz
000V/us
LT1364/LT1365
LT1365
150i2
126mW
126mW)
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Untitled
Abstract: No abstract text available
Text: SIEMENS Components for Entertainment Electronics 2 Band TV Tuner TUA 6026 Mixer-Oscillator-PLL with Unbalanced IF-Amplifier Preliminary Data Sheet 1998-09-01 Edition 1998-09-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich
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22tgg
PS05867
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