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    NPN J5304D Search Results

    NPN J5304D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN J5304D Datasheets Context Search

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    j5304d

    Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application


    Original     		FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o PDF

    j5304d

    Abstract: transistor j5304d j5304
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor Features • • • • • Equivalent Circuit High-Voltage, High-Speed Power Switch Applications Wide Safe Operating Area Built-in Free-Wheeling diode Suitable for Electronic Ballast Applications Small Variance in Storage Time


    Original     		FJE5304D O-126 J5304D O-126 FJE5304DTU j5304d transistor j5304d j5304 PDF

    j5304d

    Abstract: j5304 transistor j5304d fjp5304dtu
    Text: FJP5304D FJP5304D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-220 1 E 1.Base 2.Collector


    Original     		FJP5304D O-220 FJP5304D FJP5304DTU j5304d j5304 transistor j5304d PDF