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    NPN IC 8A Search Results

    NPN IC 8A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    ISL73096RHF/PROTO Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73127RHF/PROTO Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN Transistor Arrays Visit Renesas Electronics Corporation

    NPN IC 8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6259 amplifier

    Abstract: 2N6259 "Solenoid Drivers" 2N6259 equivalent high power npn 8A NPN Transistor 8A 2N6259 inchange
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 DESCRIPTION •DC Current Gain: hFE= 15-60@IC= 8A ·High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS ·Designed for high power audio, disk head positioners, linear


    Original     		PDF 2N6259 100mA 2N6259 amplifier 2N6259 "Solenoid Drivers" 2N6259 equivalent high power npn 8A NPN Transistor 8A 2N6259 inchange

    2SC2922

    Abstract: 2SA1216 IC-25 DSA0016507
    Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 ICBO Ratings Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V PC


    Original     		PDF 2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 30min 2SC2922 2SA1216 IC-25 DSA0016507

    2SC2922

    Abstract: transistor 2sc2922 2SA1216 2sc2922 safe operating area
    Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 Symbol ICBO Conditions 2SC2922 Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 VCEO 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A


    Original     		PDF 2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 2SC2922 transistor 2sc2922 2SA1216 2sc2922 safe operating area

    transistor 2sc3858

    Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)


    Original     		PDF 2SC3858 2SA1494) 100max 200min MT-200 50min 20typ transistor 2sc3858 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area

    2SC3858

    Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A


    Original     		PDF 2SC3858 2SA1494) 100max MT-200 200min 50min 20typ 300typ 2SC3858 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508

    IC 0116 DC

    Abstract: ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR
    Text: TS13007 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE SAT , = 3V @ Ic / Ib = 8A / 2A Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Suitable for switching regulator and motor control — High speed switching


    Original     		PDF TS13007 TS13007CZ O-220 IC 0116 DC ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR

    2SC4434

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A


    Original     		PDF 2SC4434 MT-100 100max 400min Pulse30) 10typ 135typ 2SC4434 npn triple diffused transistor 500v 8a

    2SC4434

    Abstract: npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a
    Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A


    Original     		PDF 2SC4434 MT-100 100max 400min Pulse30) 10typ 135typ 2SC4434 npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a

    Untitled

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "BUX61" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUX61 NPN TO66 200V 8A 20 60 4/3 8MHz 70W


    Original     		PDF BUX61" BUX61 BUX62" BUX62 BUY81 60MHz BUY82" BUY82 BUY82CECC

    BUS11-JQR-B

    Abstract: 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3
    Text: Search Results Part number search for devices beginning "BUS12" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUS12 NPN TO3 400V 8A 15 - 5/1 - 125W BUS12A


    Original     		PDF BUS12" BUS12 BUS12A BUS12ACECC BUS12A-JQR-B BUS12CECC BUS12-JQR-B BUS11" BUW49" BUW49 BUS11-JQR-B 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3

    vbe 10v, vce 500v NPN Transistor

    Abstract: 2SC4298 npn triple diffused transistor 500v 8a
    Text: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)


    Original     		PDF 2SC4298 100max 400min Pulse30) 10typ 85typ FM100 vbe 10v, vce 500v NPN Transistor 2SC4298 npn triple diffused transistor 500v 8a

    2SC4298

    Abstract: npn triple diffused transistor 500v 8a
    Text: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)


    Original     		PDF 2SC4298 100max 400min Pulse30) 10typ 85typ FM100 2SC4298 npn triple diffused transistor 500v 8a

    2SD2389

    Abstract: 2SB1559 in401
    Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max


    Original     		PDF 2SD2389 2SB1559) MT-100 100max 150min 5000min 2SD2389 2SB1559 in401

    transistor 2SD2389

    Abstract: 2SD2389 2SB1559
    Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max


    Original     		PDF 2SD2389 2SB1559) MT-100 100max 150min 5000min transistor 2SD2389 2SD2389 2SB1559

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •


    Original     		PDF ZXTC6717MC 100mV -140mV DS31926

    1348 transistor

    Abstract: TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D TSC148DCI TSC148DCZ Transistor 1507 Transistor 1308
    Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 1.5V @ IC / IB = 5A / 1A Block Diagram ● High Voltage Capability ● Very High Speed Switching


    Original     		PDF TSC148D O-220 ITO-220 TSC148DCZ TSC148DCI 50pcs 1348 transistor TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D Transistor 1507 Transistor 1308

    NPN MARKING 2A

    Abstract: transistor marking 2a NPN Transistor 1A 400V IC 0116 DC TS13007B NPN transistor for switching applications, 400V TS13007BCZ
    Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		PDF TS13007B O-220 50pcs TS13007BCZ NPN MARKING 2A transistor marking 2a NPN Transistor 1A 400V IC 0116 DC TS13007B NPN transistor for switching applications, 400V

    IC 0116 DC

    Abstract: NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B TS13007BCZ transistor 2a h
    Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		PDF TS13007B O-220 TS13007BCZ 50pcs IC 0116 DC NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B transistor 2a h

    MJF13009

    Abstract: 9v dc motor dc motor control circuit 220v dc 220V DC circuits motor control
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJF13009 DESCRIPTION •Collector–Emitter Sustaining Voltage : VCEO SUS = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7 s(Max.)@ IC= 8.0A


    Original     		PDF MJF13009 MJF13009 9v dc motor dc motor control circuit 220v dc 220V DC circuits motor control

    BC337 45V 800mA NPN Transistor

    Abstract: TRANSISTOR BC337-25 BC337 BC33740 TRANSISTOR BC337-40 BC337-16 BC337 45V 800mA BC337-40 bc337-40 npn transistor BC-337-16
    Text: BC337 SERIES NPN GENERAL PURPOSE TRANSISTORS 5 VOLTAGE 45 POWER 625mW FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 800mA MECHANICAL DATA 1 COLLECTOR Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208


    Original     		PDF BC337 800mA 625mW MIL-STD-202, BC337-16: BC337-25: BC337-40: BC337-40 BC337-xx BC337 45V 800mA NPN Transistor TRANSISTOR BC337-25 BC33740 TRANSISTOR BC337-40 BC337-16 BC337 45V 800mA bc337-40 npn transistor BC-337-16

    2N5943

    Abstract: motorola 2961
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 1.2 GHz - 5 0 mAdc NPN SIL IC O N H IG H -F R EQ U EN C Y T R A N SIS T O R NPN S IL IC O N H IG H -F R E Q U E N C Y T R A N SIS T O R NPN SILICO N . . . designed specifically for broadband applications requiring low


    OCR Scan     		PDF 2N5943 2N5943 motorola 2961

    BUX80

    Abstract: No abstract text available
    Text: /= 7 SGS-THOMSON ^7# IM ^m iC T[i«i] i; BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL . HIGH FREQUENCY AND EFFICENCY CONVERTERS


    OCR Scan     		PDF BUX80 BUX80 300ns,

    2N4424

    Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech GES6220

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3964 SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE. FEATURES: . High DC Current Gain : hpE=500 Min. (Ic=400nA) . Low Saturation Voltage : V CE(sat)-0.5V(Max.)(IC -300mA)


    OCR Scan     		PDF 2SC3964 400nA) -300mA)