2SC4296
Abstract: No abstract text available
Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max
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2SC4296
Pulse20)
400min
10typ
85typ
100max
FM100
2SC4296
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PDF
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2SC4296
Abstract: No abstract text available
Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max
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2SC4296
Pulse20)
400min
10typ
85typ
100max
FM100
2SC4296
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2SC5370
Abstract: FM20
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
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2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
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PDF
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2SC5370
Abstract: FM20 2402 transistor
Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A
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2SC5370
10max
40min
70min
90typ
120typ
O220F)
2SC5370
FM20
2402 transistor
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PDF
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2SC4130
Abstract: FM20 transistor+2sC4130
Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj
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2SC4130
Pulse14)
100max
400min
15typ
50typ
O220F)
2SC4130
FM20
transistor+2sC4130
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2SD2141 equivalent
Abstract: 2SD2141 FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
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2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
120mA
2SD2141 equivalent
2SD2141
FM20
DMS-10
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PDF
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TMS1000
Abstract: No abstract text available
Text: 2SC4512 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1726 Conditions Ratings Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A
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2SC4512
2SA1726)
10max
80min
50min
20typ
110typ
MT-25
to100)
TMS1000
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PDF
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2SC4064
Abstract: No abstract text available
Text: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 V(BR)CEO IC 12 A hFE µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB
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2SC4064
100max
10max
50min
35max
40typ
180typ
2SA1567)
O220F)
2SC4064
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PDF
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2SC4382
Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
Text: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A
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2SC4381/4382
2SA1667/1668)
10max
150min
200min
60min
15typ
35typ
O220F)
2SC4382
2SC4381
FM20
2SC4382 transistor
DSA0016509
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PDF
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2SC4064
Abstract: 2SA1567 FM20
Text: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 IC 12 A hFE VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB VCB=12V, f=1MHz
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2SC4064
2SA1567)
100max
10max
50min
35max
40typ
180typ
2SC4064
2SA1567
FM20
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PDF
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2SD2017
Abstract: FM20
Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W
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2SD2017
O220F)
2000min
100max
10max
250min
20typ
65typ
150x150x2
100x100x2
2SD2017
FM20
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PDF
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2SC3890
Abstract: FM20
Text: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A
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2SC3890
100max
400min
Pulse14)
10typ
50typ
O220F)
2SC3890
FM20
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PDF
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2SC3179
Abstract: 2SA1262
Text: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 ICBO VCEO 60 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE Symbol Conditions 2SC3179 Unit VCB=80V 100max µA VEB=6V 100max µA IC=25mA 60min V VCE=4V, IC=1V 40min IB 1 A VCE(sat) IC=2A, IB=0.2A
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2SC3179
2SA1262)
100max
60min
40min
15typ
60typ
29typ
2SC3179
2SA1262
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2SC4662
Abstract: FM20
Text: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A
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2SC4662
100max
400min
20typ
30typ
Pulse10)
O220F)
2SC4662
FM20
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A
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2SC4065
100max
60max
60min
50min
35max
24typ
180typ
2SA1568)
O220F)
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PDF
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2SC3852A
Abstract: 2sc3852 FM20 3852-A DSA0016508
Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ
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2SC3852/3852A
100max
60min
80min
500min
15typ
50typ
O220F)
2SC3852
2SC3852A
2SC3852A
FM20
3852-A
DSA0016508
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PDF
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2SC4662
Abstract: FM20
Text: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A
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2SC4662
100max
400min
20typ
30typ
Pulse10)
O220F)
2SC4662
FM20
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PDF
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2SC4511
Abstract: 2SA1725 FM20
Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC4511
2SA1725)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4511
2SA1725
FM20
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PDF
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2SC2922
Abstract: 2SA1216 IC-25 DSA0016507
Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 ICBO Ratings Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V PC
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2SC2922
2SA1216)
MT-200
100max
180min
50typ
250typ
30min
2SC2922
2SA1216
IC-25
DSA0016507
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PDF
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2SC2023
Abstract: No abstract text available
Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W
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2SC2023
MT-25
300min
30min
10typ
75typ
100x100x2
50x50x2
2SC2023
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PDF
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2SC5333
Abstract: FM20
Text: 2SC5333 Silicon NPN Triple Diffused Planar Transistor IC 2 A hFE VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE sat IC=1.0A, IB=0.2A 1.0max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF
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2SC5333
300min
30min
10typ
75typ
O220F)
2SC5333
FM20
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PDF
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2SC2922
Abstract: transistor 2sc2922 2SA1216 2sc2922 safe operating area
Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 Symbol ICBO Conditions 2SC2922 Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 VCEO 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A
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2SC2922
2SA1216)
MT-200
100max
180min
50typ
250typ
2SC2922
transistor 2sc2922
2SA1216
2sc2922 safe operating area
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PDF
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2SD2017
Abstract: FM20
Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W
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2SD2017
O220F)
2000min
100max
10max
250min
20typ
65typ
150x150x2
100x100x2
2SD2017
FM20
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PDF
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2sd2083
Abstract: 2sb1383
Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max
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2SD2083
2SB1383)
10max
Pulse40)
120min
2000min
20typ
340typ
MT-100
2sd2083
2sb1383
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PDF
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