Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC
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BD435
BD435
BD435L-T60-K
BD435G-T60-K
O-126
QW-R221-026
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s
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2SD2686
2SD2686
2SD2686L-AB3-R
2SD2686G-AB3-R
OT-89
QW-R208-050
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2SC4783
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4783 is NPN silicon epitaxial transistor. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage
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2SC4783
2SC4783
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s
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2SD2686
2SD2686
2SB2686G-x-AB3-R
OT-89
QW-R208-050
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marking L5
Abstract: 2SC4783 SC-75
Text: DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4783 is NPN silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = 50 V • Can be automatically mounted
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2SC4783
2SC4783
SC-75
marking L5
SC-75
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier
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2SD667
2SD667
2SD667L-x-T9N-B
2SD667G-x-T9N-B
2SD667L-x-T9N-K
2SD667G-x-T9N-K
O-92NL
QW-R211-019
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2SC4093
Abstract: 2SC4093-T1 R26 transistor R27 transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC4093
2SC4093
S21e2
2SC4093-T1
R26 transistor
R27 transistor
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290A transistor
Abstract: 2SD667 transistor 2sd667
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier * Halogen Free
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2SD667
2SD667
2SD667G-T9N-B
2SD667G-T9N-K
O-92NL
QW-R211-019
290A transistor
transistor 2sd667
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BCP68T1
Abstract: BCP68T3 BCP69T1 SMD310
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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BCP68T1
OT-223
r14525
BCP68T1/D
BCP68T1
BCP68T3
BCP69T1
SMD310
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bcp68t1
Abstract: BCP68T3 BCP69T1 SMD310
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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BCP68T1
OT-223
r14525
BCP68T1/D
bcp68t1
BCP68T3
BCP69T1
SMD310
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290A transistor
Abstract: transistor 2sd667 2SD667
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION
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2SD667
2SD667
2SD667L-T9N-B
2SD667G-T9N-B
2SD667L-T9N-K
2SD667G-T9N-K
O-92NL
QW-R211-019
290A transistor
transistor 2sd667
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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OT-223
BCP68T1
inch/1000
BCP68T3
inch/4000
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LLE18100X
Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES
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OT437A
LLE18100X
MRA543
1702 NPN transistor
transistor 431 ab
BDT85
MCD660
MRA542
transistor w 431
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epsilam 10
Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial
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LFE18500X
epsilam 10
BY239
MLC431
BDT91
LFE18500X
SC15
erie 1250-003
diode BY239
iw16
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2N5320
Abstract: 2N5321 2N5322 2N5323
Text: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal
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2N5322
2N5323
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2N5321
2N5323
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2N5320
Abstract: 2N5321 2N5321 THOMSON 2N5322 2N5323
Text: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal
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2N5321
2N5322
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2N5320
2N5321
2N5321 THOMSON
2N5323
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transistor 2sc3355 and application
Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
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2SC3355
2SC3355
2SC3355-T
PU10208EJ01V0DS
transistor 2sc3355 and application
transistor 2sc3355 and application NOTICE
2SC3355, npn
2SC3355-T
PA33
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2SC3355
Abstract: transistor 2sc3355 and application PA33 marking PA33
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS
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2SC3355
transistor 2sc3355 and application
PA33
marking PA33
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NEC NF 932
Abstract: 2SC4092
Text: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.
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S21e2
NEC NF 932
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2SC2945
Abstract: 2SC2954 tc1458a IC 4025
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF
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2SC2954
2SC2945
tc1458a
IC 4025
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2sc1275
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that
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2SC1927
2SC1927
2SC1275,
2sc1275
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3810 is an NPN silicon epitaxial dual transistor having 5.0 MIN.
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2SC3810
2SC3810
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2SC738
Abstract: 2SC7 FT440
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor
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2SC738
2SC738
100MHz,
440MHztyp
SC-43
100MHz
2SC7
FT440
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4258 FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4258 is a super mini package resin sealed silicon NPN epitaxial Unit:mm OUTLINE DRAWING
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2SC4258
2SC4258
11mstyp
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