BSS59
Abstract: bss 97 transistor
Text: BSS59 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Verstärker und schnelle Schalter Applications: A m piifier and high speed switches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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BSS59
BSS59
bss 97 transistor
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3053 TRANSISTOR
Abstract: transistor 3053 2N3053
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung • High current gain
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Kolle00
3053 TRANSISTOR
transistor 3053
2N3053
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High voltage fast switching power transistor to92
Abstract: UBV45 NPN Silicon Epitaxial Planar Transistor to92
Text: UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage
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UBV45
UBV45
UBV45L
UBV45-T92-A-B
UBV45-T92-A-K
UBV45L-T92-A-B
UBV45L-T92-A-K
UBV45L-T9t
QW-R201-081
High voltage fast switching power transistor to92
NPN Silicon Epitaxial Planar Transistor to92
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BC394
Abstract: No abstract text available
Text: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM
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BC394
BC394
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3094 transistor
Abstract: BF422 BF423 OQJ300
Text: BF422 NPN SILICON M 1C R D PLANAR HIGH EPITAXIAL VOLTAGE TRANSISTOR El— ECTRCDINIICIIS MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION ; The BF422 is a NPN silicon planar epitaxial transistor. It features high voltage and is intended for high voltage class A output stage of audio frequency
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BF422
BF423
10Kohm
-30mA
Vce-50V.
00x49477
OQJ300,
3094 transistor
BF423
OQJ300
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2n3700
Abstract: tfk 140
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Features: Besondere Merkmale: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung • High current gain
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transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
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HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
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2N5770
Abstract: T0-92A T092A
Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage
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2N5770
2N5770
T0-92A
625mW
300mW
60MHz
-3-00C4C9
3MHS321
B0kfe947y
T0-92A
T092A
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2N5770
Abstract: T0-92A MICRO ELECTRONICS ltd transistor
Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal High frequency amplifiers and oscillators. 1 CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage
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2N5770
T0-92A
625mW
300mW
60MHz
-3-00B4g0
T0-92A
MICRO ELECTRONICS ltd transistor
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
100ms*
500ms*
QW-R211-015
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
QW-R211-015
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2SC2482
Abstract: common collector amplifier applications ce20v vc20e
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
QW-R211-015
2SC2482
common collector amplifier applications
ce20v
vc20e
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BC394
Abstract: No abstract text available
Text: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. c u d TO-18 e t le s t o r
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BC394
BC394
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3440S
Abstract: 2N3440S hFE-10 G-2675
Text: 2N 3440S EPITAXIAL PLANAR NPN HIGH VOLTAGE AMPLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high voltage sw itching and linear am plifier applications. The complementary PNP type is the 2N 5415S. ABSOLUTE MAXIMUM RATINGS
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3440S
3440S
5415S.
2N3440S
G-2675
10/us
2N3440S
hFE-10
G-2675
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BC485
Abstract: BC487 transistors BC 487 BC489
Text: B C 485 B C 487 B C 489 NPN SILICON PLANAR EPITAXIAL TRANSISTORS IVIICFRD ELEC CASE T0-92F BC485, BC487 and BC489 are NPN silicon planar epitaxial transistors designed for use as high voltage high current driver and output transistors. ABSOLUTE MAXIMUM RATINGS
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BC485,
BC487
BC489
I0-92F
BC485
625mW
500mA
100mA
transistors BC 487
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MPSA42
Abstract: No abstract text available
Text: MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-04-27 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3
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MPSA42-BK
MPSA42-BK
UL94V-0
MPSA42
MPSA92
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MPSA42
Abstract: MPSA43 na-100 10D3 MPSA92 MPSA93
Text: MPSA42 / MPSA43 MPSA42 / MPSA43 High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2005-06-17 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx.
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MPSA42
MPSA43
UL94V-0
MPSA42
MPSA92,
MPSA93
MPSA43
na-100
10D3
MPSA92
MPSA93
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10D3
Abstract: MPSA42 MPSA92 TO-92 Gehause
Text: MPSA42 MPSA42 High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2010-09-30 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. Gewicht ca.
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MPSA42
UL94V-0
MPSA92
10D3
MPSA42
MPSA92
TO-92 Gehause
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2n3019
Abstract: tfk 140 3019 npn transistor 554 -1 transistor
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: A llgem ein und Verstärker Applications: G eneral and a m plifier Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung
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MPSA44
Abstract: No abstract text available
Text: MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-07-07 Power dissipation Verlustleistung ±0.1 E BC min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3
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MPSA44-BK
MPSA44-BK
UL94V-0
MPSA44
MPSA94
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Untitled
Abstract: No abstract text available
Text: MPSA42 MPSA42 High Voltage Si-Epitaxial Planar Transistors Si-Epitaxial Planar Hochspannungs-Transistoren NPN NPN Version 2006-09-14 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca.
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MPSA42
UL94V-0
MPSA92
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transistor BR 471 A
Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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N125A
626/1177A2
transistor BR 471 A
be27
BF 471
Transistor A 471
CM 90-PS
Scans-0010675
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10D3
Abstract: MPSA42 MPSA92
Text: MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-07-07 Power dissipation Verlustleistung ±0.1 E BC min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3
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MPSA42-BK
UL94V-0
MPSA42
MPSA92
10D3
MPSA42
MPSA92
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mpsa44
Abstract: No abstract text available
Text: MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-05-10 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3
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MPSA44-BK
MPSA44-BK
UL94V-0
MPSA44
MPSA94
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