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    NPN BIPOLAR TRANSISTOR Search Results

    NPN BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    NPN BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN Bipolar Transistors for AC Adaptors and DC-DC Converters: TTC008, TTC012｜T. Page 1 of 3 NPN Bipolar Transistors for AC Adaptors and DC-DC Converters: TTC008, TTC012 We have developed NPN bipolar transistors for AC adaptors and DC-DC converters. The


    Original     		TTC008, TTC012ï TTC012 TTC008 AC100 AC200 2SC6010 PDF

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK.


    Original     		PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK.


    Original     		PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.


    Original     		PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101 PDF

    BUD43D2

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


    Original     		BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 PDF

    8 pin ic 3844 for 5 volts

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107 PDF

    transistor zo 107

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor PDF

    npn transistor 400 volts.10 amperes

    Abstract: No abstract text available
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


    Original     		BUD43D2 BUD43D2: r14525 BUD43D2/D npn transistor 400 volts.10 amperes PDF

    MTP8P10

    Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


    Original     		BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10 PDF

    02D2G

    Abstract: 18002d2 motorola transistor dpak marking MJD18002D2 MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original     		MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G 18002d2 motorola transistor dpak marking MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original     		MJD18002D2 MJD18002D2 MJD18002D2/D PDF

    02D2G

    Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original     		MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 PDF

    Untitled

    Abstract: No abstract text available
    Text: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis­


    OCR Scan     		AT-32063 OT-363 SC-70) AT-32063 OT-363 PDF

    MJD18002D2

    Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain


    Original     		MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 PDF

    18002D2

    Abstract: No abstract text available
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain


    Original     		MJD18002D2 MJD18002D2 18002D2 PDF

    BCs 43 TRANSISTOR

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1
    Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.


    Original     		AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-8921E 5989-2645EN BCs 43 TRANSISTOR AT-32063-BLK AT-32063-TR1 PDF

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC


    Original     		PHPT61002NYC OT669 LFPAK56) PHPT61002PYC PDF

    AT-41511-BLKG

    Abstract: smt a1 transistor NPN zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 S21E AT-41511-TR1G 5989-2649EN
    Text: AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The


    Original     		AT-41511, AT-41533 AT-41511 AT-41533 OT-23, AT-41511 OT-143. AT-41511: AT-41533: AT-41511-BLKG smt a1 transistor NPN zo 103 ma AT-41511-BLK AT-41511-TR1 S21E AT-41511-TR1G 5989-2649EN PDF

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN PDF

    SUT465N

    Abstract: npn-pnp dual
    Text: SUT465N Semiconductor Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 NPN+PNP Chips in SOT-26 PKG


    Original     		SUT465N 500mW OT-26 OT-26 KSD-T5P006-000 SUT465N npn-pnp dual PDF

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY PDF

    100 amp npn darlington power transistors

    Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
    Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0


    Original     		NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP PDF

    306 marking code transistor

    Abstract: AT-32033-TR1G AT-32033 IC 32011 marking code E1 sot23 AT-32011 AT32011 low noise amplifier ckt design at 30 MHz marking AT3 SOT-23 marking 550 sot143
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal


    Original     		AT-32011, AT-32033 AT-32011 AT-32033 AT32011 OT-143. transisSOT-23 OT-143 306 marking code transistor AT-32033-TR1G IC 32011 marking code E1 sot23 low noise amplifier ckt design at 30 MHz marking AT3 SOT-23 marking 550 sot143 PDF