2SD2017
Abstract: FM20
Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W
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2SD2017
O220F)
2000min
100max
10max
250min
20typ
65typ
150x150x2
100x100x2
2SD2017
FM20
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2SD2017
Abstract: FM20
Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W
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Original
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2SD2017
O220F)
2000min
100max
10max
250min
20typ
65typ
150x150x2
100x100x2
2SD2017
FM20
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PDF
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transistor tl 430 c
Abstract: No abstract text available
Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =
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BDY46
transistor tl 430 c
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LB-008
Abstract: lc08a LB 125 transistor Triple Diffused
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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OCR Scan
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KSC5338D/KSC5338DW
O-220
LB-008
lc08a
LB 125 transistor
Triple Diffused
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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Original
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KSC5338D/KSC5338DW
O-220
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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OCR Scan
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KSC5338D/KSC5338DW
O-220
T0-220
C35siÃ
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
KSC5338D/KSC5338DW
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PDF
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ZTX857
Abstract: 300V transistor npn 2a DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio
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ZTX857
100mA,
100MHz
250mA,
500mA,
100ms
ZTX857
300V transistor npn 2a
DSA003778
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300V transistor npn 2a
Abstract: 2SC5305 2SC5305L
Text: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications
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2SC5305
O-220
2SC5305L
QW-R203-028
300V transistor npn 2a
2SC5305
2SC5305L
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PDF
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2sc5305
Abstract: 2SC5305L
Text: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications
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2SC5305
O-220F
2SC5305L
QW-R219-003
2sc5305
2SC5305L
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PDF
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NPN Transistor 10A 400V
Abstract: 2N5663 300V transistor npn 2a LE17
Text: SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N5663
100mW/
O-205AA)
NPN Transistor 10A 400V
2N5663
300V transistor npn 2a
LE17
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NTE385
Abstract: No abstract text available
Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
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NTE385
NTE385
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JANS2N2484
Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930
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JANS2N930
JANS2N930UB
JANS2N2218
JANS2N2218A
JANS2N2218AL
JANS2N2219
JANS2N2219A
JANS2N2219AL
JANS2N2221A
JANS2N2221AL
JANS2N2484
JANS2N3439UA
JANS2N3637
transistors SMD npn
JANS2N5339U3
JANS2N7373
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MJE18008
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification MJE18008 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJE18008
O-220C
CycleC10%
MJE18008
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MJF18008
Abstract: No abstract text available
Text: Product Specification www.jmnic.com Silicon NPN Power Transistors MJF18008 ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed ・Improved efficiency due to low base rive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS
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MJF18008
O-220F
O-220F)
Cycle10%
MJF18008
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PDF
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MJE18008
Abstract: No abstract text available
Text: Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS
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MJE18008
O-220C
Cycle10%
MJE18008
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PDF
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MJF18008 equivalent
Abstract: MJF18008
Text: SavantIC Semiconductor Product Specification MJF18008 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJF18008
O-220F
O-220F)
CycleC10%
MJF18008 equivalent
MJF18008
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PDF
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BUV48
Abstract: BUV48A buv48 equivalent BUV48 Applications
Text: SavantIC Semiconductor Product Specification BUV48 BUV48A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING See Fig.2
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BUV48
BUV48A
BUV48
BUV48A
buv48 equivalent
BUV48 Applications
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PDF
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MJF18008
Abstract: MJF18008 equivalent
Text: Inchange Semiconductor Product Specification MJF18008 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJF18008
O-220F
O-220F)
Cycle10%
MJF18008
MJF18008 equivalent
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PDF
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MJE18008
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification MJE18008 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts
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MJE18008
O-220C
Cycle10%
MJE18008
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PDF
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300V transistor npn 2a
Abstract: 2N5240 voltage regulators 300v dc 300V series regulators 200V transistor npn 2a 300V regulator 2N5240 inchange
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5240 DESCRIPTION •High Voltage: VCEO SUS = 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and
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2N5240
RBE50
300V transistor npn 2a
2N5240
voltage regulators 300v dc
300V series regulators
200V transistor npn 2a
300V regulator
2N5240 inchange
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5305DF
O-220F
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QS 100 NPN Transistor
Abstract: KSC5305DF
Text: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications
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KSC5305DF
O-220F
QS 100 NPN Transistor
KSC5305DF
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