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    NPN 2A FAST SWITCHING Search Results

    NPN 2A FAST SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet

    NPN 2A FAST SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1709

    Abstract: No abstract text available
    Text: Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709


    Original     		PDF EN3096A 2SA1709/2SC4489 2SA1709 2SA1709

    darlington complementary 120v

    Abstract: FZT605 FZT604 FZT704 FZT705 dc1s VCES10
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching PARTMARKING DETAIL COMPLEMENTARY TYPES - E DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705


    Original     		PDF OT223 FZT604 FZT605 FZT604 FZT704 FZT605 FZT705 100ms darlington complementary 120v FZT704 FZT705 dc1s VCES10

    FZT605

    Abstract: FZT604 FZT705
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT605 ISSUE 4 - MARCH 2001 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching E PARTMARKING DETAIL COMPLEMENTARY TYPES - FZT605 FZT705 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF OT223 FZT605 FZT705 100ms FZT605 FZT604 FZT705

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT605 ISSUE 4 - MARCH 2001 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching E PARTMARKING DETAIL COMPLEMENTARY TYPES - FZT605 FZT705 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF OT223 FZT605 FZT705 100ms FZT604 FZT605

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching PARTMARKING DETAIL COMPLEMENTARY TYPES - E DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705


    Original     		PDF OT223 FZT604 FZT605 FZT604 FZT704 FZT605 FZT705 100ms

    OMA120

    Abstract: FZT605 FZT604 FZT705 ARAA 14ge
    Text: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705


    Original     		PDF OT223 FZT604 FZT604 FZ1704 FZT605 FZT705 FZT605 FZTBI14 OMA120 FZT705 ARAA 14ge

    fzt604

    Abstract: FZT605
    Text: Not Recommended for New Design Please Use FZT605 SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching PARTMARKING DETAIL COMPLEMENTARY TYPES - E DEVICE TYPE IN FULL


    Original     		PDF FZT605 OT223 FZT604 FZT704 FZT605 FZT705

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT603 ISSUE 3 – NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching C E PARTMARKING DETAIL – DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF OT223 FZT603 100ms

    POWER TRANSISTOR TO-220

    Abstract: No abstract text available
    Text: TSC741 High Voltage Fast-Switching NPN Power Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 1050V IC VCE SAT Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability ● High Switching Speed


    Original     		PDF TSC741 O-220 TSC741CZ 50pcs POWER TRANSISTOR TO-220

    A13 MARKING CODE

    Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
    Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability


    Original     		PDF TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP O-251 75pcs A13 MARKING CODE transistor a13 MARKING a13 A13 transistor a13 marking transistor diode MARKING CODE a13

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs


    Original     		PDF EN2006D 2SA1417/2SC3647 2SA1417 250mm2

    FJP3307D

    Abstract: No abstract text available
    Text: FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 1.Base TO-220 2.Collector 3.Emitter E Absolute Maximum Ratings


    Original     		PDF FJP3307D O-220 FJP3307D

    trace code TO-220

    Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
    Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram


    Original     		PDF FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D

    FJP3307D

    Abstract: electronic ballast with npn transistor
    Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram


    Original     		PDF FJP3307D FJP3307D O-220 electronic ballast with npn transistor

    Untitled

    Abstract: No abstract text available
    Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings


    Original     		PDF FJB3307D

    FJB3307D

    Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat
    Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B D2-PAK 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings


    Original     		PDF FJB3307D FJB3307D QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat

    2SC4109

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4109 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications


    Original     		PDF 2SC4109 00V/16A 2SC4109

    2sc4424 data

    Abstract: 2SC4424
    Text: Inchange Semiconductor Product Specification 2SC4424 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide ASO. APPLICATIONS ·Switching regulator applications PINNING


    Original     		PDF 2SC4424 2sc4424 data 2SC4424

    2SC4109

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4109 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications


    Original     		PDF 2SC4109 00V/16A 2SC4109

    2SC4424

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4424 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide ASO. APPLICATIONS ·Switching regulator applications PINNING PIN


    Original     		PDF 2SC4424 2SC4424

    ZTX449

    Abstract: No abstract text available
    Text: PNP Silicon Planar Medium Power Transistor ZTX549 FEATURES • 1W power dissipation at Tsmb = 2 5 °C • 2A peak pulse current • Excellent gain characteristics up to 2A pulsed • Low saturation voltages • Fast switching • NPN complementary type available


    OCR Scan     		PDF ZTX549 ZTX449 300/is. ZTX449

    FCX653

    Abstract: No abstract text available
    Text: FCX653 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * FAST SWITCHING. * LOW SATURATION VOLTAGE. * H fe UP TO 6A PULSED. * 2A Ic CONTINUOUS. * COM PLEMENTARY TYPE - FCX753. PARTMARKING DETAILS - N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage


    OCR Scan     		PDF FCX753. FCX653 100mA 500mA, 100mA, 100MHz 300fxs. DS149 FCX653

    ZTX605

    Abstract: SE109
    Text: NPN Silicon Planar Medium Power Darlington Transistors ZTX 604 ZTX605 FEATURES • • • • • 1.5W power dissipation 1A continuous collector current 4 A peak collector current Guaranteed hFE specified up to 2A Fast switching DESCRIPTION The ZT X6 04 and


    OCR Scan     		PDF ZTX605 ZTX605 ZTX604 100mA 2TX60A/5 SE113 SE109

    2N6354

    Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180 2n6479
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6354 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180 2n6479