NPN 200 VOLTS 20 AMPS POWER TRANSISTOR Search Results

NPN 200 VOLTS 20 AMPS POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

NPN 200 VOLTS 20 AMPS POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NPN 200 VOLTS 20 Amps POWER TRANSISTOR Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	MJW3281A MJW1302A MJW3281A MJW1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A	PDF
2N3773 NPN Audio Power AMP Transistor Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25	Original	OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006	PDF
MJW2119x Abstract: No abstract text available Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	MJW21193 MJW21194 MJW21193 MJW21194 MJW2119x	PDF
MJW21196 Abstract: No abstract text available Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	MJW21195 MJW21196 MJW21195 MJW21196	PDF
Untitled Abstract: No abstract text available Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D	PDF
MJW-1302A Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D MJW-1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn	PDF
MJW1302A Abstract: MJW3281A NPN 200 VOLTS 20 Amps POWER TRANSISTOR Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D NPN 200 VOLTS 20 Amps POWER TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D	PDF
complementary npn-pnp power transistors Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D complementary npn-pnp power transistors MJW1302AG MJW3281AG	PDF
MJW1302A Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247 Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency	Original	MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D MJW1302AG MJW3281AG complementary npn-pnp power transistors TO-247	PDF
MJL3281A Abstract: No abstract text available Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency	Original	MJL3281A MJL1302A MJL3281A MJL1302A	PDF
NSP5665 Abstract: sat 1205 Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *	Original	2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205	PDF
transistor MJL21194 Abstract: mjl21194 mjl21193 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193 Text: ON Semiconductort PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device	Original	MJL21193 MJL21194 MJL21193* MJL21194* MJL21194 transistor MJL21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor mjl21193	PDF
MJW21195 Abstract: MJW21196 Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D	PDF

NPN 200 VOLTS 20 Amps POWER TRANSISTOR Abstract: mjl21195 Text: ON Semiconductort PNP MJL21195 * NPN MJL21196 * Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • •	Original	MJL21195 MJL21196 MJL21195 MJL21196 NPN 200 VOLTS 20 Amps POWER TRANSISTOR	PDF
transistor Mj21194 Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR MJ21194 MJ21193 Text: ON Semiconductort PNP MJ21193 * NPN MJ21194 * Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device	Original	MJ21193 MJ21194 MJ21193 MJ21194 transistor Mj21194 NPN 200 VOLTS 20 Amps POWER TRANSISTOR	PDF
MJW21194 Abstract: MJW21193 Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	MJW21193 MJW21194 MJW21193 MJW21194 r14525 MJW21193/D	PDF
power transistors cross reference Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products	Original	MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE	PDF
MJW21196 Abstract: MJW21195 npn 10000 JAPAN transistor Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D npn 10000 JAPAN transistor	PDF
MJW21194 Abstract: CIB-1000 TRANSISTOR npn MJW21193 MJW21193G MJW21194G Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	MJW21193 MJW21194 MJW21193 MJW21194 MJW21193/D CIB-1000 TRANSISTOR npn MJW21193G MJW21194G	PDF
Untitled Abstract: No abstract text available Text: NJW21193G PNP NJW21194G (NPN) Preferred Devices Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	NJW21193G NJW21194G NJW21193G NJW21194G NJW21193/D	PDF
MJL3281A MJL1302A Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors	Original	MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors	PDF
MJW21194 Abstract: MJW21193 Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com	Original	MJW21193 MJW21194 MJW21193 MJW21194 r14525 MJW21193/D	PDF
GSRU14040 Abstract: ru140 Text: General Semiconductor Industries, Inc. G S R U 1 40 4 0 tw itc h P faH H HIGH POWER NPN TRANSISTORS The GSRU series of NPN silicon transistors is designed for high speed switching systems. The GSRU14040 features General Semiconductor Industries' C2R manufacturing process to	OCR Scan	GSRU14040 ru140	PDF

NPN 200 VOLTS 20 AMPS POWER TRANSISTOR Search Results

NPN 200 VOLTS 20 AMPS POWER TRANSISTOR Result Highlights (5)

NPN 200 VOLTS 20 AMPS POWER TRANSISTOR Datasheets Context Search

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

2N3773 NPN Audio Power AMP Transistor

MJW2119x

MJW21196

Untitled

MJW-1302A

MJW1302A

Untitled

complementary npn-pnp power transistors

MJW1302A

MJL3281A

NSP5665

transistor MJL21194

MJW21195

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

transistor Mj21194

MJW21194

power transistors cross reference

MJW21196

MJW21194

Untitled

MJL3281A MJL1302A

MJW21194

GSRU14040