NPN 2 Search Results

PMBT6428

Abstract: PMBT6429 Philips MARKING CODE 1k
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBT6428; PMBT6429 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 27 2004 Jan 22 Philips Semiconductors Product specification NPN general purpose transistors PMBT6428; PMBT6429 FEATURES

bc879

Abstract: transistor BC879 BC879 darlington transistor bc875 NPN POWER DARLINGTON TRANSISTORS bc879 transistor 24825
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors Product specification Supersedes data of 1999 May 28 2004 Nov 05 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES

sot23 marking V2p

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION

GH1-213QG

Abstract: GH1-213QH GH1-213QK GH1-213QX GH1-313QA GH1-313QB GH1-313QD GH1-313QE GH1-413QC GH1-413QF
Contextual Info: GH1 电感式接近开关 13 5 GH1-313QA 外形编号 检测距离 Sn[mm] NPN 常开 NPN 常闭 NPN 一开一闭 GH1-313QB GH1-413QC DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 二线制 常开 GH1-313QD GH1-313QE 具 号 GH1-413QF GH1-213QG

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHRT5993GP SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere APPLICATION * UHF Converter * Local Oscillator SOT-23 .019 0.50 MARKING .066 (1.70) * NPN RF Transistor .110 (2.80) .082 (2.10) .119 (3.04)

BSR14 SOT23

Abstract: bsr14 bsr13 BSR14,215
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

GH1-214QG

Abstract: GH1-214QH GH1-214QK GH1-214QX GH1-314QA GH1-314QB GH1-314QD GH1-314QE GH1-414QC GH1-414QF
Contextual Info: GH1 电感式接近开关 14 5 外形编号 检测距离 Sn[mm] NPN 常开 NPN 常闭 GH1-314QA GH1-314QB NPN 一开一闭 DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 二线制 常开 GH1-414QC GH1-314QD 具 GH1-314QE GH1-414QF GH1-214QG GH1-214QH

TO247 CASE

Contextual Info: MJH6284 NPN , MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287

Contextual Info: LS3250A MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS3250A is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and is ideal for use in tracking applications.

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR CMBT9014 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

9013 smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: LS120 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120 The LS120 is a monolithic pair of NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

PBSS4240T

Abstract: PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2001 Jul 13 2004 Jan 09 Philips Semiconductors Product specification 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T QUICK REFERENCE DATA

FMMT493ATA

Contextual Info: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring

TO-220AB transistor package

Abstract: bdw42G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

S44 MARKING

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X

Contextual Info: LS310 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS310 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS

S305NZ

Abstract: PBSS305NZ PBSS305PZ SC-73
Contextual Info: PBSS305NZ 80 V, 5.1 A NPN low VCEsat BISS transistor Rev. 01 — 19 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

S306NZ

Abstract: PBSS306NZ PBSS306PZ SC-73 philips transistor smd code
Contextual Info: PBSS306NZ 100 V, 5.1 A NPN low VCEsat BISS transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

nec 2571

Abstract: nec 2571 4 pin 9522 transistor C 4804 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device

MMBT5089

Abstract: MMBT5088
Contextual Info: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

Contextual Info: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volt VOLTAGE POWER 330 mW • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . Halogen Free

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free