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    NPN 100N 1A Search Results

    NPN 100N 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN 100N 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn 100n 1a

    Abstract: KT922A 2N2650 STXB 2S01733 motorola diode 2n3253 750M10 2n697a 2S0774
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 Natl Semi See Index Micro Elecs Natl Semi See Index V/O Electro Elec Trans Solid Stlnc Sanyo Elect PhilipsElec Philips~!ec 25 30 35 40 45 :'U 55 60 65 - 70 75 - 80 85 9U PhilipsElec See Index Semelab NthAmerSemi


    Original     		PDF TN221BA 2N55B1 TN2219A 2N55B2 KT922A 2SCB22 2SC822 2SC37BO BLX97 npn 100n 1a 2N2650 STXB 2S01733 motorola diode 2n3253 750M10 2n697a 2S0774

    BF456

    Abstract: 2sc1941k 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E
    Text: RF POWER SILICON NPN Item Number Part Number I C S 10 Manufacturer 20 25 30 35 40 45 50 BF179A BF179A BF179A BF179B BF179B BF179B BF179C BF179C BF179C -zsDT463 MM3002 ST3002 MM3003 2SC2632 2SC2633 2N706 2N706A 2N706B 2N706C 2SC34230 2SC3423Y 2SC1012 2SC1012A


    Original     		PDF 2SC3424 TBF869 TBF871 2SC1940K 2SC1940L 2SC1940M 2SC2780 2SC1941K 2SC1941L BF456 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E

    MP5W01A

    Abstract: 2N6197 Motorola 2N6080 2N6207 2N6366 40327 1405 Motorola acrian inc 25C31 motorola tip29
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, Solid Stine Advned Semi Semi Inc NEC Corp JA NECElecslnc MitsubiElec MitsubiElec Solid Stlnc ToshibaCorp ToshibaCorp ~~g~:g~ ~atsusnlta I(C) 20 25 30 35 40 45 50 55 60 65 70 75 80 85 - 90 >= Ie Max


    Original     		PDF 2S0356 2S0415 2S0357 2S0358 S1732 2SC3425 MP5W01A 2N6197 Motorola 2N6080 2N6207 2N6366 40327 1405 Motorola acrian inc 25C31 motorola tip29

    D40V2

    Abstract: BF469S kt940a 2SC4030 D40N5 BF881 bf109 BF883S KT940B 140 telefunken
    Text: POWER SILICON NPN Item Number Part Number I C -5 -10 15 25 30 35 40 45 - 50 55 60 65 70 -75 • 80 85 · 90 95 - 868 Ic Max Y(BR)CEO (A) (V) hFE Min Max fT ICBO Max t, Max PD Toper Max Max Max (Hz) (A) (8) (a) (W) (OC) 400 400 1.0 1.0 1.0 1.2 2.0 1.0 2.0 1.0


    Original     		PDF 202AB O-202AB T0-202AB 205AO 220AB 237var 202var D40V2 BF469S kt940a 2SC4030 D40N5 BF881 bf109 BF883S KT940B 140 telefunken

    TRANSISTOR SMD K23

    Abstract: B DIN 5463
    Text: User's Guide SLAU296 – October 2009 ADS54RF63-ADX4 Single-channel, 12-bit, 2.2 GSPS Evaluation Module EVM 1 2 3 4 5 6 7 8 9 10 Contents Introduction . 2


    Original     		PDF SLAU296 ADS54RF63-ADX4 12-bit, TRANSISTOR SMD K23 B DIN 5463

    ZTX415

    Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


    Original     		PDF ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c

    Untitled

    Abstract: No abstract text available
    Text: FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 V+- =10V - V 175°C 60 Risetime of Base


    Original     		PDF FMMT415 FMMT417 100mA 200mA 20MHz 100MHz

    fmmt417

    Abstract: FMMT415 transistor 200V 100MA NPN npn 100n 1a AVALANCHE TRANSISTOR DSA003693 620PF
    Text: FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 V+- =10V - V 175°C 60 Risetime of Base


    Original     		PDF FMMT415 FMMT417 100mA 200mA 20MHz fmmt417 FMMT415 transistor 200V 100MA NPN npn 100n 1a AVALANCHE TRANSISTOR DSA003693 620PF

    stocko mkf

    Abstract: SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151
    Text: APPLICATION NOTE Improved Picture Quality Module MK7-V1 V0.9 AN97058 Philips Semiconductors Improved Picture Quality Module MK7-V1 V0.9 Application Note AN97058 Abstract This documents describes the hardware content, the signal processing and the software control of the 100 Hz


    Original     		PDF AN97058 stocko mkf SAA4991 47 micro farad 16v electrolytic radial capacitor 78L05ACP philips Electrolytic Capacitor 100 micro farad 25v electrolytic capacitor 74HCT4066T DIODE p13 picture 74f08d philips tda9151

    kds6j

    Abstract: BC548 TRANSISTOR SMD NA smd SCHEMATIC DIAGRAM REVERSE KWH METER hcf4066 L7805 TO220 BC548 smd BZ 55C 16 SMD GDM093 e-Meter
    Text: UM0221 User manual STEVAL-IPE007V1: Single-phase energy meter with tamper detection based on ST7lite2x Introduction This user manual provides a description of a single chip energy meter, STEVAL-IPE007V1, with tamper detection. The meter fulfills IEC 61036:1996 + A1:2000 static meter


    Original     		PDF UM0221 STEVAL-IPE007V1: STEVAL-IPE007V1, kds6j BC548 TRANSISTOR SMD NA smd SCHEMATIC DIAGRAM REVERSE KWH METER hcf4066 L7805 TO220 BC548 smd BZ 55C 16 SMD GDM093 e-Meter

    capacitor 100N 63V 2u2

    Abstract: capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt
    Text: Bill of Materials Q-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32


    Original     		PDF T23A230 Q69-X8743 VAC5024-X006 SMD08 N5024-X006 SMD0805 22nF/50V, SMD0805; 100nF/50V, B45196-E122. capacitor 100N 63V 2u2 capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt

    RELAY RM2 TR1

    Abstract: SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6
    Text: Bill of Materials T-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32


    Original     		PDF T23A230 Q69-X8743 VAC5024-X006 SMD08 N5024-X006 SMD0805 22nF/50V, SMD0805; 100nF/50V, B45196-E122. RELAY RM2 TR1 SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6

    transistor A2

    Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
    Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


    Original     		PDF ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A


    Original     		PDF ZXTNS618MC 150mV 500mV DFN3020B-8 DS31933

    MC14528 equivalent

    Abstract: STV2000 TQFP44
    Text: STV2000 I2C SINGLE FREQUENCY DEFLECTION PROCESSOR AND 70 MHz RGB PREAMPLIFIER PRELIMINARY DATA The STV2000 is an I2C-controlled monolithic integrated circuit assembled in a TQFP44 plastic package. It combines both a deflection block horizontal and vertical, single frequency with very


    Original     		PDF STV2000 STV2000 TQFP44 70MHz 100kHz MC14528 equivalent

    Laptop AC adapter 19V

    Abstract: universal laptop schematic power supply 19v circuit diagram 4R7 inductor nippon chemicon taping codes R36 COIL FOR LAPTOP L6563 flyback PFC L6566A STP9NK50ZFP Equivalent EER35 pin L6563
    Text: AN2690 Application note 19 V - 75 W adapter with pre-regulator PFC using the L6563 and the L6566A Introduction This application note describes the characteristics and the features of a 75 W reference board, wide-range input mains and power-factor corrected. Its electrical specification is


    Original     		PDF AN2690 L6563 L6566A L6566A L6563-75W EVL6566A75WADP) Laptop AC adapter 19V universal laptop schematic power supply 19v circuit diagram 4R7 inductor nippon chemicon taping codes R36 COIL FOR LAPTOP L6563 flyback PFC STP9NK50ZFP Equivalent EER35 pin

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541

    ZXTN25020DG

    Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541 ZXTN25020DG TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25

    Untitled

    Abstract: No abstract text available
    Text: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


    OCR Scan     		PDF LA201 LA202

    PCJ 3 9001

    Abstract: Pirgo Electronics
    Text: •hwakfp 00 4 3592 A P I ELECTRONICS A, F I EL EC T RO N I CS 13A0132 INC 13 INC ■»1 T-áJ'Q! D ¡ T d D 4 3 5 cíB □ □ 0 0 1 B E T | % rUfTEK i K A n s m u K ENGINEERING BULLETIN 1 AMP NPN TO-5 120V at 100mA ICEX 100|iA max at V Cfí=120V PG5004


    OCR Scan     		PDF 13AO132 DD435cà 001BE 100mA 500mA, 100mA PCJ 3 9001 Pirgo Electronics

    2SB1557

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2386 U nit in mm POWER AMPLIFIER APPLICATIONS • • 15.9M A X High Breakdown Voltage : V q e O = 140V (Min.) C o m p le m e n ta ry to 2SB1557 ¿ 3 .2 1 0-2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SD2386 2SB1557

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER O PO W ER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V(Min.) Complementary to 2SB1556 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VfiBO VCEO VEB0 !C !B Collector Power Dissipation (Tc = 25°C) PC


    OCR Scan     		PDF 2SD2385 2SB1556

    2N725

    Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. B170024 4000n 2N725 L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803

    Untitled

    Abstract: No abstract text available
    Text: IDE t I 4302371 ÜÜ13073 1 I HARRIS SE MIC OND SECTOR H A R R HA- 5033/883 I S 7^ 7 7 -2 S ' Video Buffer J a n u a ry 1 9 8 9 Features Description • T h is C irc u it Is P ro c e s s e d In A c c o rd a n c e to M li-S td 8 8 3 a n d is F u lly C o n fo rm a n t U n d e r th e P ro v is io n s o f


    OCR Scan     		PDF 500mV 10Vto0