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    NPN 100N Search Results

    NPN 100N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    NPN 100N Price and Stock

    Murata Manufacturing Co Ltd LQH3NPN100NJ0L

    FIXED IND 10UH 710MA 360MOHM SMD
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    DigiKey LQH3NPN100NJ0L Digi-Reel 1
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    Bristol Electronics LQH3NPN100NJ0L 3,750 7
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    Chip 1 Exchange LQH3NPN100NJ0L 2,000
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    Murata Manufacturing Co Ltd LQH3NPN100NM0L

    FIXED IND 10UH 870MA 312MOHM SMD
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    Murata Manufacturing Co Ltd LQH3NPN100NG0L

    FIXED IND 10UH 630MA 684MOHM SMD
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    NPN 100N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    quan-tech

    Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 GES6220 PDF

    D39C4

    Abstract: ei50 2n5306 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 GES6220 PDF

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93 PDF

    D38S5

    Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,


    OCR Scan     		2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S3' D38S5 hitachi 16 X 2 lcd 2N5232A PDF

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


    OCR Scan     		GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A PDF

    GES5307

    Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)


    OCR Scan     		2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 2n3901 equivalent 2N5232A PDF

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Text: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


    OCR Scan     		GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308 PDF

    2n3901 equivalent

    Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n3901 equivalent 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent PDF

    2N3877

    Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220 PDF

    TRANSISTOR 2n3901

    Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 TRANSISTOR 2n3901 2N390 pnp 2N3901 PDF

    2N3643

    Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3643 PDF

    n3860

    Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 PDF

    2n3901 equivalent

    Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n3901 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: Central" CMLT3904E NPN CMLT3906E PNP CMLT3946E NPN/PNP Semiconductor Corp. ENH ANCED SPEC IFIC A T IO N COMPLEMENTARY PICOmini SILICON TRANSISTORS ENHANCED DESCRIPTION: The Central Semiconductor CMLT3904E two sin­ gle NPN , CMLT3906E (two single PNP), and


    OCR Scan     		CMLT3904E CMLT3906E CMLT3946E CMLT3904E CMLT3906E CMLT3946E OT-563 CMLT3904E: CMLT3906E: PDF

    L78 H

    Abstract: No abstract text available
    Text: Centrai CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini surface mount package with enhanced specifications


    OCR Scan     		CMLT5078E CMLT5087E CMLT5088E CMLT5078E, CMLT5087E, CMLT5088E, CMLT5078E: CMLT5087E: CMLT5088E: OT-563 L78 H PDF

    2N4424

    Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40


    OCR Scan     		2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech GES6220 PDF

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220 PDF

    2N5089 equivalent

    Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 GES5307 PDF

    D39C4

    Abstract: GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BV C e o @ 10mA V hF E fT V CE(SAT) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B Typical (MHz) Ccb@10V 1 MHz Typical (Pf) PT @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN 40


    OCR Scan     		2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D39C4 GES6220 2N5305 PDF

    2SC2320L

    Abstract: h a 431 transistor RO10K
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX


    OCR Scan     		2SC2320L 2SC2320L 100nnA, NVS150mV SC-43 270Hz h a 431 transistor RO10K PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CZT2000 Sam lcoitductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,


    OCR Scan     		CZT2000 OT-223 25piA 16OmA, 160mA 100nA 160mA PDF

    UN 2911

    Abstract: No abstract text available
    Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70


    OCR Scan     		HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 UN 2911 PDF

    7474 ic

    Abstract: IC 7474 IC 7474 datasheet 4044 transistor nf 7474 IC datasheets dionics 7474 features of ic 7474 10PA
    Text: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIL-4044 MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Description: Dual NPN transistors, Dielectrically Isolated,


    Original     		DIL-4044 100nA; 7474 ic IC 7474 IC 7474 datasheet 4044 transistor nf 7474 IC datasheets dionics 7474 features of ic 7474 10PA PDF

    PNP DARLINGTON 40V 100mA SOT-23

    Abstract: SILICON COMPLEMENTARY transistors darlington IB 100MA NPN
    Text: NTE2404 NPN & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications.


    Original     		NTE2404 NTE2405 100nA 100mA, 100MHz PNP DARLINGTON 40V 100mA SOT-23 SILICON COMPLEMENTARY transistors darlington IB 100MA NPN PDF