NTE2311
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V
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NTE2311
NTE2311
npn 1000V 15A
NPN Transistor VCEO 1000V
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Untitled
Abstract: No abstract text available
Text: ^zml-tonauctoi U^i , Lfnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor MJE18006 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed
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MJE18006
O-220C
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triac mw 131 600d
Abstract: 65n06
Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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npn 1000V 15A
Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in
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MJW16010A
npn 1000V 15A
NPN Transistor VCEO 1000V
diode 1000V 10a
MJW16010A
transistor 1000V 6A
transistor VCE 1000V
transistor 1000V
vbe 10v, vce 500v NPN Transistor
transistor VCEO 1000V
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transistor VCE 1000V
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:
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NTE2333
NTE2333
130mA,
650mA
600mA,
transistor VCE 1000V
npn 1000V 15A
NPN Transistor VCEO 1000V
300V transistor npn 15a
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NPN Transistor VCEO 1000V
Abstract: transistor BUX81/9
Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and
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BUX81
\GRAPHICS\TO204AA
BUX81
204AA
100kHz
NPN Transistor VCEO 1000V
transistor
BUX81/9
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NPN Transistor VCEO 1000V
Abstract: bux81 npn 1000V 15A vbe 10v, vce 500v NPN Transistor transistor
Text: BUX81 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX81
BUX81
NPN Transistor VCEO 1000V
npn 1000V 15A
vbe 10v, vce 500v NPN Transistor
transistor
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transistor
Abstract: No abstract text available
Text: BUX81 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX81
BUX81
transistor
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NPN transistor Ic 50A td tr ts tf
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -218 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:
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X10-4
NPN transistor Ic 50A td tr ts tf
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MJW16010A
Abstract: X10-4
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:
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BUL50A
Abstract: NPN Transistor VCEO 1000V NPN Transistor VCEO 30A 1000V npn 1000V 15A
Text: SEME BUL50A LAB MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 2 1 3 1.65 (0.065) 2.13 (0.084)
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BUL50A
300ms
BUL50A
NPN Transistor VCEO 1000V
NPN Transistor VCEO 30A 1000V
npn 1000V 15A
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Untitled
Abstract: No abstract text available
Text: S EM E BUL50A LA B MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 2 1 3 1.65 (0.065) 2.13 (0.084)
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BUL50A
300ms
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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MJW16010A
Abstract: No abstract text available
Text: J , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA MJW16010A Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) Wide Area of Safe Operation
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MJW16010A
T100r
MJW16010A
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Untitled
Abstract: No abstract text available
Text: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )
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BUX33A
BUX33B
BUX33
300ms,
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npn 1000V 15A
Abstract: BUX33 transistor VCE 1000V vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor VCEO 1000V BUX33A BUX33B
Text: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )
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BUX33A
BUX33B
BUX33
300ms,
npn 1000V 15A
transistor VCE 1000V
vbe 10v, vce 500v NPN Transistor
npn high voltage transistor 500v 8a
NPN Transistor VCEO 1000V
BUX33A
BUX33B
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npn 1000V 100a
Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020
Text: -p W Ê R Ë X DE i T S T H t i S l IN C " m tÊ B sx. v f f U I X t A A IN O y o u Æ o / ' b ü aD02b7S T | TT _- 3333-1] R 5 D7ST1008, D7ST1010, D7ST1012 Tentative Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching
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7214t21
T-33-15
D7ST100&
D7ST1010,
D7ST1012
Amperes/1000
D7ST1008/1010/1012,
D7ST1008/1010/1012
D7ST1012
npn 1000V 100a
D7ST1008
1S697
D7ST100805
D7ST1010
50c020
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2n2222 texas instruments
Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
Text: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER
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TIPL757,
TIPL757A
TIPL757
TIPL757A
TIPL760,
TIPL760A
TIPL761
2n2222 texas instruments
BY206
n-p-n r.f. power transistors
npn 1000V 15A
D037D
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Untitled
Abstract: No abstract text available
Text: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •
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BUX48,
BUX48A
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BUX348APF
Abstract: NPN Transistor VCEO 1000V
Text: SEMELAB LTD 0133107 37E 3> SEMELAB MÖL 0 £ BUX 348APF NEW PRODUCT NPN PLANAR TRANSISTOR MULTI EMITTER ION-IMPLANTED FOR FAST SWITCHING APPLICATIONS MECHANICAL DATA Dimensionsin mm FEATURES 50 200 • HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGE • WIDE AREA OF SECONDARY
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0000E1Ö
348APF
T03PBL
BUX348APF
NPN Transistor VCEO 1000V
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L755A
Abstract: tipl7 37041
Text: TEXA S I N S T R -COPTO} 8961726 bS TEXAS INSTR DE IflTblTEb DD37D35 3 OPTO 62C 3 7 0 3 5 T - S D 3 ' f * TlPL75*ï TIPL7<5RA N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED O CTOBER 19 8 4 • 180 W at 2 5 ° C C ase Temperature • 10 A Continuous Collector Current
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DD37D35
TlPL75*
TIPL755
L755A
7S26S
D037D4E
TIPL755
L755A
tipl7
37041
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MG75M2CK1
Abstract: tkp7
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain
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MG75M2CK1
MG75M2CK1
tkp7
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transistor t2a 82
Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:
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T-33-/3
T0126
15A3DIN
transistor t2a 82
transistor 81 110 w 85
transistor BUT 12
transistor BC 245
BUT76A
transistor BF 245
MARKING NJ CODE SOT 23
TRANSISTOR BI 237
marking 712
marking va transistors
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