NPN/TS 4142 Search Results

syrelec 4541

Abstract: crouzet 4541 syrelec ts 4142 Syrelec Crouzet ts 4141 syrelec C 106 Syrelec 100 crouzet
Contextual Info: 4141 / 4142 Preselection up/down counters, LCD, 48 x48 • ■ ■ ■ ■ ■ Presets and scale factor easy to alter Large back-lit LCD display unit Simultaneous display of current value and preset Safeguarded : good resistance to interference Backed up on EEPRÔM memory

SL 100 NPN Transistor base emitter collector

Abstract: KSC5022 KSC5020 KSC5021 KSC5023 vbe 10v, vce 500v NPN Transistor js 206a MC 331 transistor C-03A transistor high voltage
Contextual Info: SAMSUNG SEMICONDUCTOR INC IME KSC5020 D | 7^4142 00Q?S02 b NPN SILICON TRANSISTOR T - 3 3 -/ / HIGH VOLTAGE, HIGH QUALITY HIGH SPPED SWITCHING: t,=0.1fS • W IDE SO A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage

KSC5027

Abstract: KSC5028 KSC5025 KSC5026 KSC5029 LA1LA NPN Transistor 1.5A 400V
Contextual Info: SA MS U N G SEMICONDUCTOR INC 14 E D f l 7=^4142 G007Sflfl NPN SILICON TRANSISTOR KSC5024 HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol - Characteristic .Collector-Base Voltage Collector-Emitter Voltage

JE3055

Contextual Info: SAMSUNG ELECTRONICS MJD3055 INC 42E D B 7^4142 000=1031 1 OSÍ1GK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • « • • • Lead Formed for Surface Mount Applications No Suffix

KSC2749

Abstract: npn transistors 400V 1A To92 NPN TO92 400V
Contextual Info: SAMSUNG SEM ICONDUCTOR INC KSC2749 14E 0 | 7*^4142 0007573 5 | NPN EPITAXIAL SILICON TRANSISTOR T - Ì 3 - 3 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage

NPN Transistor 10A 400V

Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
Contextual Info: ¡SAMSUNG SEMICONDUCTOR INC KSC2751 " 1«4E 0 | 7^^4145 0 0 0 7 5 7 b 0 | NPN EPITAXIAL SILICON TRANSISTOR " : ; rT~33 -is HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating ' Sym bol Collector-Base Voltage

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

K*D1691

Abstract: 2A 80v complementary transistor ts 4142 AGQF KSB1151 KSD1691 KSD986
Contextual Info: IME D | 7*^4145 0ÛQ7L5S *1 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD986 SAMS UN G SEMICONDUCTOR INC T-33-29 V - #- LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 150 80 8.0 ±1.5 ± 3 .0

transistor P33

Abstract: KSC2749 KSC2690 KSC2690A 3a npn to126 transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2690/2690A 14E D j T 'im m a 0007S7G T NPN EPITAXIAL SILICON TRANSISTOR T - 3 3 - o J AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER • Complement to KSA1220/KSA1220A ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic i Symbol ' Rating

Contextual Info: KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING: t, = 0.1 WIDE SOA Typ TO-220 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current (DC)

fe120

Abstract: KSC1507 TO-202 transistor NPN KSA473 KSA636 KSC1098 KSC1173 samsung tv
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC1098 1ME D | 7^1.4142 Q007S33 4 NPN EPITAXIAL SILICON TRANSISTOR -3 Ò -o n LOW FREQUENCY AMPLIFIER • • • • Complement to KSA636 Collector-Base Voltage Vc»o=7W Collector Current lc =2 A Collector Dissipation Pc=10W{Tc=25°C

KSD569

Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
Contextual Info: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol

KSC5027

Contextual Info: NPN SILICON TRANSISTOR KSC5027 HIGH VOLTAGE AND HIGH RELIABILITY TO -220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I.PACK, I ” Suffix) Electrically Similar to Popular TIP122

Contextual Info: NPN SILICON TRANSISTOR KSC5023 HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING: t, = 0.1 pS Typ WIDE SOA ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: NPN SILICON TRANSISTOR KSC5030 HIGH VOLTAGE AND HIGH RELIABILITY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)

e 13009 d

Abstract: transistor E 13009 transistor E 13009 l E 13009 2
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:

Contextual Info: KSC5026 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA TO -220 ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Sym bol Collector-B ase Voltage VcBO Collector-Em itter Voltage Em itter-Base Voltage VcEO C ollector Current (DC)

KSC5020

Contextual Info: NPN SILICON TRANSISTOR KSC5020 HIGH VOLTAGE, HIGH QUALITY TO -220 HIGH SPPED SWITCHING: t,=0.1 iS • WIDE SO A ABSOLUTE MAXIMUM RATINGS (Ta= 25°C Sym bol Ch aracteristic C o llecto r-B ase Voltage C ollector-Em itter Voltage VcBO VcEO V ebo Em itter-Base Voltage

TS 4142

Abstract: 18Oi KSC2517 KSC2518
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2517 14E D 7 ‘ì t m 4 E GDD7SSÖ 1 | NPN EXITAXIAL SILICON TRANSISTOR r - 3 s ~ o f HIGH S P E E D SWITCHING' T0*220 INDUSTRIAL USE A B S O L U T E MAXIMUM RATINGS (Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

KSC2333

Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
Contextual Info: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I

KSR1101

Abstract: KSR2101 T-35-U
Contextual Info: S A M S U N G S E M I C O N D U C T O R .INC KSR1101 14E D | 7^4145 0 00 7 0 3 ^ 7 NPN EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7Ki) R,=4.7Kil)