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    NPN/TRANSISTOR 187 Search Results

    NPN/TRANSISTOR 187 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN/TRANSISTOR 187 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4401 NATIONAL SEMICONDUCTOR

    Abstract: pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
    Text: 2N4401 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


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    PDF 2N4401 2N4403 OT-23 MMBT4401, 2N4401-BULK D-74025 01-Sep-04 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-TAP MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration

    ZO 103 MA 75 623

    Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
    Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 ZO 103 MA 75 623 ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452

    CMPT5551

    Abstract: transistor NF marking code
    Text: Central CMPT5551 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier


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    PDF CMPT5551 CMPT5551 OT-23 100oC 100MHz transistor NF marking code

    Untitled

    Abstract: No abstract text available
    Text: Qs.iisy <£fLmi-Conciuctoi '[P'loducti., Una. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed


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    PDF 2SC1324 770MHz 770MHz. 500MH2.

    2N1893

    Abstract: No abstract text available
    Text: 2N1893 SMALL SIGNAL NPN TRANSISTOR • GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage


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    PDF 2N1893 2N1893

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


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    PDF 2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399

    2N1893

    Abstract: No abstract text available
    Text: 2N1893 SMALL SIGNAL NPN TRANSISTOR • GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage


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    PDF 2N1893 2N1893

    2N3019

    Abstract: No abstract text available
    Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM


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    PDF 2N3019 2N3019 20MHz P008B

    Untitled

    Abstract: No abstract text available
    Text: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits


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    PDF BUJ303AD OT428

    TD2400

    Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
    Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


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    PDF 2SC5007 2SC5007 TD2400 transistor zo 607 2SC5007-T1 NEC 1555 AK-804 164-1-1

    2n3019 equivalent

    Abstract: 2N3019 2n3019 transistor
    Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM


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    PDF 2N3019 2N3019 2n3019 equivalent 2n3019 transistor

    pin configuration transistor 2n4403

    Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 2N4401 SOT-23 2N4403
    Text: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


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    PDF 2N4403 2N4401 OT-23 MMBT4403. 2N4403-BUs D-74025 01-Sep-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 SOT-23 2N4403

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF NSB1706DMW5T1G, NSVB1706DMW5T1G NSB1706DMW5T1/D

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906 transistor 2N3906 2N3906-BULK 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3904 2N3906-TAP MMBT3906
    Text: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


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    PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK D-74025 01-Sep-04 pin configuration NPN transistor 2n3906 2N3906 transistor 2N3906 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3906-TAP MMBT3906

    IC SEM 2105

    Abstract: 3771 nec
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 IC SEM 2105 3771 nec

    928 606 402 00

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 928 606 402 00

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPT5551 Sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage am plifier


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    PDF CMPT5551 CMPT5551 OT-23 100MHz 00D1A37

    TFK 840

    Abstract: BF167 TRANSISTOR tfk 840 TFK 105 A1187 AMB-45
    Text: BF 167 Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am plifier stages in com m on em itter configuration Besondere Merkmale: Features:


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band portable or hand-held radio applications. Dimensions in mm


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    PDF 2SC2056 2SC2056 175MHz

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


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    PDF 2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


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    PDF 2SC5006 2SC5006

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


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    PDF 2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


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    PDF 2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor