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    NPN, TRANSISTOR, SC 107 B Search Results

    NPN, TRANSISTOR, SC 107 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    NPN, TRANSISTOR, SC 107 B Price and Stock

    TE Connectivity KUHP-11AT1-24

    Power Relay 24VAC 20A DPDT(60.5x35.38x62.51)mm Flange
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KUHP-11AT1-24 107
    • 1 $694.82
    • 10 $674.13
    • 100 $226.25
    • 1000 $226.25
    • 10000 $226.25
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    Carling Technologies GTI-40483500

    Switch Toggle ON None OFF DPST Paddle Lever Solder Lug 15A 250VAC 559.27VA Panel Mount with Threads
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com GTI-40483500 107
    • 1 -
    • 10 $11.09
    • 100 $7.19
    • 1000 $5.34
    • 10000 $5.34
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    TE Connectivity 6-1393114-6

    KUHP-11AT1-24=KU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 6-1393114-6 107
    • 1 $694.82
    • 10 $674.13
    • 100 $226.25
    • 1000 $226.25
    • 10000 $226.25
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    TE Connectivity W67-X2Q13-2

    Circuit Breaker Hydraulic Magnetic 1Pole 2A 277VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com W67-X2Q13-2 107
    • 1 $35.46
    • 10 $29.15
    • 100 $26.55
    • 1000 $25.76
    • 10000 $25.76
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    TE Connectivity B-044-24-N-LF

    B-044-24-N-LF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com B-044-24-N-LF 107
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    • 10 $13.6
    • 100 $10.55
    • 1000 $8.36
    • 10000 $8.36
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    Find more NPN, TRANSISTOR, SC 107 B price and stock on Findchips.com

    NPN, TRANSISTOR, SC 107 B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LMUN5311DW1T1G LMUN5311DW1T1G

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz


    Original     		PDF MRF949T1/D MRF949T1 MRF949 MRF949T1/D

    200E

    Abstract: MRF1047 MRF1047T1
    Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and


    Original     		PDF MRF1047T1/D MRF1047T1 MRF1047T1 200E MRF1047

    200E

    Abstract: MRF1047 MRF1047T1
    Text: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA


    Original     		PDF MRF1047T1/D 03AUG01 26MAR02 200E MRF1047 MRF1047T1

    NSVMUN5333

    Abstract: SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93
    Text: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with


    Original     		PDF MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1GSeries MUN5311DW1T1G OT-363 MUN5311DW1T1/D NSVMUN5333 SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


    OCR Scan     		PDF

    Transistor BFX 90

    Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


    OCR Scan     		PDF 23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor

    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


    OCR Scan     		PDF MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


    OCR Scan     		PDF 023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

    Untitled

    Abstract: No abstract text available
    Text: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers


    OCR Scan     		PDF S35bOS Q0Q47SÔ Q62702-F320

    transistor k 425

    Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
    Text: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED


    OCR Scan     		PDF r-33-73 BU522 BU522A BU522B BU522) BU522A) BU522B) BU522A, transistor k 425 sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A

    CAP M5E

    Abstract: M559 M559-02 M559-01
    Text: M OT OR OL A 6367254 SC -CXSTRS/R MOTOROLA SC Fï Tt. XSTRS/R D Ë J b3b?2S4 ODÖ2414 96D 8 2 4 1 4 F 4 J ~ D'T A 3 ~ ^ b M A X IM U M RATINGS Symbol Value U nit v CEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage VEB 6.0 Vdc 'C 800 mAdc


    OCR Scan     		PDF M559-01 MS59-02 M559-02 M559-02 Mil-Std-750, CAP M5E M559

    Untitled

    Abstract: No abstract text available
    Text: 2SDÌ792 TP7L20 NPN jf— |js . NPN Darlington Transistor \ H iS 3 Outline Dim ensions 4.6 ±0- F'(ffi[§lS& Equivalent Circuit 2.7±o.z qC 0.7±o^ Bo- Unit I mm Case ! ÌTO-220 M/VV-MA/V- ~4kn ~200n i E A b so lu te Max. R a tin g s « S aa SC *=* 77 S ym bol


    OCR Scan     		PDF TP7L20) O-220 DDG147Q 2SD1792

    lt 5237

    Abstract: 2N5390
    Text: TYPE 2N5390 N-P-N DARLINGTON-CONNECTED PLANAR SILICON POWER TRANSISTOR • Very High Gain — 1000 Min at 5 A • High-Speed Switching — 0.3 ¡j . s Typ ton | 3 h> Z “ 55 p ° ‘ d e v ic e sc h e m a tic o * m e c h a n ic a l d a t a 5 'a b s o l u t e m a x im u m r a t in g s a t 2 5 ° C c a se t e m p e r a t u r e u n le ss o th e r w is e n o te d


    OCR Scan     		PDF 2N5390 lt 5237

    sot303

    Abstract: No abstract text available
    Text: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,


    OCR Scan     		PDF AT-32063 OT-363 vailable111 OT-363 5665-1234E sot303

    npn pnp transistor bipolar cross reference

    Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
    Text: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l


    OCR Scan     		PDF

    2n3054a

    Abstract: No abstract text available
    Text: m 2N3054A \ \ SILICON NPN POWER TRANSISTOR D E SC R IP T IO N : The 2N3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications M A XIM U M R A T IN G S 4.0 A 10 A PEAK lc V INCHES 55 V ce 75 W @ Tc = 25 °C P diss -65 °C to +200 °C


    OCR Scan     		PDF 2N3054A 2N3054A

    Untitled

    Abstract: No abstract text available
    Text: W529XX U'inbond Etectronics Corp. ADPCM VOICE SYNTHESIZER PowerSpeech If GENERAL DESCRIPTION The W529XX family comprises 4-bit ADPCM and 8-bit PCM voice synthesizers that provide basic PowerSpeech instructions and a number of more powerful commands, which include basic ALU


    OCR Scan     		PDF W529XX W529XX W52904, W52905, W52906, W52910, W52915, W52920. W52902

    Untitled

    Abstract: No abstract text available
    Text: M M O T O R O L A — — — M C33077 Dual, Low Noise O perational A m plifier The MC33077 is a precision high quality, high frequency, low noise monolithic dual operational amplifier employing innovative bipolar design techniques. Precision matching coupled with a unique analog resistor trim


    OCR Scan     		PDF C33077 MC33077 b3b72S3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA MC33077 SEMICONDUCTOR TECHNICAL DATA Dual, Low Noise Operational Amplifier The M C33077 is a precision high quality, high frequency, low noise monolithic dual operational am plifier em ploying innovative bipolar design techniques. Precision matching coupled with a unique analog resistor trim technique is used


    OCR Scan     		PDF MC33077 C33077

    PJ 0349

    Abstract: PJ 2399 0709s
    Text: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA


    OCR Scan     		PDF AT-41532 SC-70 OT-323) OT-323 SC-70) 1-800-Z35-031Z 5965-6167E PJ 0349 PJ 2399 0709s

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT 1 "KM PACK ARD General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • G eneral P urpose NPN B ipolar T ran sistor O ptim ized for Low C urrent, Low V oltage A p p lications at 900 MHz, 1.8 GHz, and 2.4 GHz


    OCR Scan     		PDF AT-41532 OT-323 SC-70 OT-323) 5965-6167E