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    NOW JERSEY SEMICONDUCTOR Search Results

    NOW JERSEY SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NOW JERSEY SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: <z/Vsur , {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2IM2979 DUAL NPN LOW LEVEL LOW NOISE DIFFERENTIAL AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Now 1) Maximum Temperatures Storage Temperature Operating Junction Temperature


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    PDF 2IM2979

    BLY93a

    Abstract: No abstract text available
    Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR


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    PDF BLY93A 30Vdc. 175MHzl BLY93a

    DMILL

    Abstract: 4634 81F64842B
    Text: takes advantages of high-volume production latch-up immune above 100 Krads TEMIC Semiconductors provides a full range of components for the demanding environments of the space, defense and avionics industries. As a long-term qualified supplier to commercial, military and space HiRel programs, we offer the


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    PDF processe10 DMILL 4634 81F64842B

    Valor pt3877

    Abstract: eprom 92112 pt3877 BNC TO RJ45 WIRING diagram 92112 EPROM pulse TRANSFORMER valor PE65431 Valor Electronics FL1020 VALOR lan transformer Valor Electronics FL1012
    Text: National Semiconductor System Brief 119 D Benham May 1991 TL F 11222 – 3 FIGURE 1 Ethernet Network Interface Adapter INTRODUCTION The IEEE 802 3 Standard for Ethernet has emerged as the most popular cost effective Local Area Network LAN for connecting computers workstations printers and other peripherals together Until now most Ethernet networks have


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    PDF 10Base2 10Base5 10Base-T Valor pt3877 eprom 92112 pt3877 BNC TO RJ45 WIRING diagram 92112 EPROM pulse TRANSFORMER valor PE65431 Valor Electronics FL1020 VALOR lan transformer Valor Electronics FL1012

    MRF138

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF138 VHP POWER MOSFET TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Enhancement Mode DESCRIPTION: MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up


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    PDF MRF138 MRF138 /30MHz 100mA

    BLW87

    Abstract: No abstract text available
    Text: Qs.is.s.u £s,mL- -onau.etoi O' , U na. c/ 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW87 is Designed for Class C, 12.5 V High Band Applications


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    PDF BLW87 BLW87 10dBat25W/175MHz

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF171 TMOS RF FET N-Channel Enhancement Mode DESCRIPTION: MRF171 is a gold metallized N-Channel Enhancement mode MOSFET, intended for use in 28 VDC


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    PDF MRF171 MRF171 112x45A 12dBminat150MHz

    BLW76

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and


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    PDF BLW76 BLW76

    77GHz Radar

    Abstract: PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD
    Text: UMS MMIC Solutions up to 100GHz The European Source for Products, Solutions and Foundry Services ABOUT US United Monolithic Semiconductors* UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Ulm, Germany and Orsay,


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    PDF 100GHz 77GHz Radar PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD

    GMS80C701

    Abstract: LA 7805 87C52 Siemens 87C51 replacement atmel 0848 datasheet 7805 L pt 8538 C501-1E ST 7805 80C51
    Text: Because time-to-market and flexibility are now the keywords for all electronic applications, programmable products are becoming more andmoreimportant. Today OTP one-time-programmable products represent a significant and increasing part of the 80C51 market.


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    PDF 80C51 TSC87C52 87C52 C501-1E AT89C52 GMS80C701 W87E52 TSC87C51 87C51 GMS80C701 LA 7805 87C52 Siemens 87C51 replacement atmel 0848 datasheet 7805 L pt 8538 C501-1E ST 7805

    CFC-112

    Abstract: CFC-217 silver conductive ink resins 3842 ON Semiconductor CFC-216 ON Semiconductor CFC-214 62527
    Text: May 2007 Product Chemical Content Brochure = Dear Customer and Supplier: ON Semiconductor now provides the detailed material composition, based on the homogenous or piece parts contained in its products. This information is available on the following web site by searching for its


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    ms 12211

    Abstract: 2N4951 2N4944 2n4946
    Text: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN Transistors General Purpose Amplifiers and Switches (Continued) Type No. 2N4401 Case Style TO-92 VCBO (V) Mln VCEO (V) Mln VEBO (V) Mln


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    PDF 2N4401 2N4944 I43-1 3Se-040Â 10-NOM OOtS-0109 41J-2 ms 12211 2N4951 2N4944 2n4946

    Rectifier

    Abstract: 10DF2 10DF4 10DF6 10DF8 11DF4
    Text: £07 ,_/£ii£i/J ^^rni-C-onauctoi Li na. Cx TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Rectifiers Ultra-Fast Recovery 1 to 6.6 Amps Plrt Number VRWM <F(AV) « TC VFII« "F(AV) (V) W" "true


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    PDF 100F1 10DF2 10DF4 10DF6 10DF8 11DF1 11DF2 11DF3 11DF4 DO-204AL Rectifier 10DF2 10DF4 10DF6 10DF8 11DF4

    B755

    Abstract: MPM3004 closed loop control of servo motor in microcontroller brush dc servo motor speed control MC68HC05B6 B-755 MRD750 KDS -5a stepping motor japan servo M68HC05
    Text: Freescale Semiconductor, Inc. Application Note AN1120/D Rev. 1, 11/2001 Basic Servo Loop Motor Control Using the MC68HC05B6 MCU Freescale Semiconductor, Inc. By Jim Gray General Description This application note describes a basic circuit and software implementing


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    PDF AN1120/D MC68HC05B6 B755 MPM3004 closed loop control of servo motor in microcontroller brush dc servo motor speed control B-755 MRD750 KDS -5a stepping motor japan servo M68HC05

    FS1016

    Abstract: bpra070 C.E.L.P 24 v MSP58C80 Z0810 FS-1016 celp coding celp coding 1995 233236
    Text: CELP Coding - MCELP on the MSP58C80 Literature Number: BPRA070 Texas Instruments Europe December 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the


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    PDF MSP58C80 BPRA070 FS1016 bpra070 C.E.L.P 24 v MSP58C80 Z0810 FS-1016 celp coding celp coding 1995 233236

    Powerex Power Semiconductors

    Abstract: hotel wind turbine mini project wind inverter ford igbt igbt testing procedure Phase-Control IC with Soft Start x-ray igbt inverter h bridge
    Text: News of Importance to Power Semiconductor Users POW-R-PAK : New Technology, New Power Conversion Solutions… …for micro-turbines, flywheels, remote power systems, fuel cell products, and more! While Powerex has a leadership role in serving the well-established market for IGBT components, there


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    VN35AB

    Abstract: VN67AB VN89AB
    Text: , Una. VN3OAB, VN35AB, VN67AB, VN89AB, VN90AB 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled


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    PDF VN35AB, VN67AB, VN89AB, VN90AB VN30AB. VN35AB VIM67A8 VN89AB VN30AB, VN35AB VN67AB VN89AB

    Inselek

    Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
    Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.


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    Eupec Power Semiconductors

    Abstract: Heatsinks extrusion
    Text: Engineered Solutions using Extrusions ETMI offers the most complete and reliable product line of power SCRs and diodes. Using a wide range of extruded profiles, cut and machined in our own state-of-the-art production facilities, instead of standard heatsinks, allows


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    2N23MA

    Abstract: No abstract text available
    Text: io aucii, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MAXIMUM HATWM Rntm Symbct Collootor-CmttMr Vohio.* 2N236SAA 2N3227 CellMMr-EmliurVoltig* Ccll«cior-fl«*« Votttgt Emltur-BaM Velug*


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    PDF 2N236SAA 2N3227 2N23MAA 2N136SA, 2N2368 2N2369, 2N23MA

    closed loop control of servo motor in microcontroller

    Abstract: MPM3004 B755 MC68HC05B6 MRD750 AN1120 B754 IC MC33151 document B-057 stepping motor japan servo
    Text: Freescale Semiconductor Application Note AN1120/D Rev. 1, 11/2001 Freescale Semiconductor, Inc. Basic Servo Loop Motor Control Using the MC68HC05B6 MCU By Jim Gray General Description This application note describes a basic circuit and software implementing


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    PDF AN1120/D MC68HC05B6 closed loop control of servo motor in microcontroller MPM3004 B755 MRD750 AN1120 B754 IC MC33151 document B-057 stepping motor japan servo

    music

    Abstract: No abstract text available
    Text: Application Brief AB-N8 Conversion of MU9C1485 Wideport LANCAM to MU9C1485A/L Wideport LANCAMs® Introduction This Application Brief describes the ease with which a design may be moved from the MUSIC MU9C1485 WidePort LANCAM to the MUSIC MU9C1485A WidePort LANCAM. The enhanced features have been


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    PDF MU9C1485 MU9C1485A/L MU9C1485 MU9C1485A music

    silicon carbide LED

    Abstract: No abstract text available
    Text: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 C h ic a g o M iniature WHERE INNOVATION COMES TO LIGHT L a m i ? In c . LEDs have relatively limited light outputs when compared to other light sources available today.


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    PDF 1900s silicon carbide LED

    MPM3004

    Abstract: B755 B759 tic 137 bb57 M146805 M6805UM MC34151 0F81 MLED71
    Text: Order this document by AN1120/D MOTOROLA I SEMICONDUCTOR APPLICATION NOTE AN1120 Basic Servo Loop Motor Control Using the MC68HC05B6 MCU By Jim Gray This application note describes a basic circuit and software implementing proportional derivative PD closed-loop speed control for a brush motor using four integrated circuits (ICs), two opto discretes,


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    PDF AN1120/D AN1120 MC68HC05B6 A30024 MPM3004 B755 B759 tic 137 bb57 M146805 M6805UM MC34151 0F81 MLED71