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    NORMALLY OFF SIC JFET Search Results

    NORMALLY OFF SIC JFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    NORMALLY OFF SIC JFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDC30S120

    Abstract: SEMISOUTH SGDR2500P2 SJEC120R100 SEMISOUTH SDC30S120 APTJC120AM13VCT1AG Semisouth SJEC120R100 JFET semisouth sic jfet diode t25 4 c3
    Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 mΩ max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • SiC JFETX, Normally off 8 * SJEC120R100 in parallel per switch


    Original     		PDF APTJC120AM13VCT1AG SJEC120R100 SDC30S120 SGDR2500P2) APTJC120AM13VCT1AG SEMISOUTH SGDR2500P2 SEMISOUTH SDC30S120 Semisouth SJEC120R100 JFET semisouth sic jfet diode t25 4 c3

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT BRIEF Subject to change LX1780 SiC Enhancement Mode Silicon Carbide JFET and Bipolar Transistors Driver DESCRIPTION The LX1780 is an extremely fast-switching Gate driver IC for driving normally-off silicon carbide JFET switches. It replaces


    Original     		PDF LX1780 LX1780

    Untitled

    Abstract: No abstract text available
    Text: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 michael.frisch@vincotech.com FIRST STANDARD POWER MODULES WITH NORMALLY OFF SiC JFETs FOR HIGHPERFORMANCE SOLAR INVERTERS


    Original     		PDF

    ASJE1200R100

    Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
    Text: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		PDF O-258 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 O-257 SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120 silicon carbide JFET

    ASJE1700R550

    Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
    Text: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		PDF ASJE1700R550 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 O-257 SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP

    ASJE1200R063

    Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
    Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		PDF ASJE1200R063 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 O-257 SiC JFET JFET semisouth SJEP120 SEMISOUTH silicon carbide JFET sjep120r0

    SJEP170R550

    Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
    Text: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		PDF ASJE1700R550 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 semisouth JFET 3E05 SEMISOUTH JFET semisouth

    JFET semisouth

    Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		PDF ASJE1200R063 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 JFET semisouth SiC JFET SEMISOUTH sjep120r0

    JFET semisouth

    Abstract: SEMISOUTH SiC JFET
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		PDF O-257 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 JFET semisouth SEMISOUTH SiC JFET

    JFET semisouth

    Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET
    Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A


    Original     		PDF SGDR600P1 5V/-15V SGDR600P1 SJEP120R050 SJEP120R063 SJEP120R050 JFET semisouth SEMISOUTH SJEP120 AN-SS1 ixdd509 SiC JFET JFET

    SiC-JFET

    Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
    Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: "Developed for EDN. For more related features, blogs and insight from the EE community, go to www.EDN.com" High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place Philip Zuk, Director of Market Development, High-Voltage MOSFET Group, Vishay Siliconix


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-147 michael.frisch@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com A COMPLETE RANGE OF POWER MODULES WITH VARIOUS SiC SWITCHES FOR HIGHPERFORMANCE, THREE-PHASE SOLAR INVERTERS


    Original     		PDF

    SiC JFET

    Abstract: normally off sic jfet silicon carbide j-fet SOIC28 RD11 RD12 RD22 NMOS4005 ac-dc wind turbine control silicon carbide JFET normally on
    Text: The Leader in High Temperature Semiconductor Solutions CHT-THEMIS/CHT-ATLAS Version: 1.4 17-Feb-11 Last Modification Date PRELIMINARY DATASHEET Driver Chipset for SiC and Si Power Switches High Reliability, High Temperature Capable General description Features


    Original     		PDF 17-Feb-11 DS-100759 SiC JFET normally off sic jfet silicon carbide j-fet SOIC28 RD11 RD12 RD22 NMOS4005 ac-dc wind turbine control silicon carbide JFET normally on

    Untitled

    Abstract: No abstract text available
    Text: The Leader in High Temperature Semiconductor Solutions CHT-ATLAS Version: 3.4 12-Nov-13 Last Modification Date Dual Channel Power Transistor Driver General description Features CHT-ATLAS is a high-temperature, high reliability power transistor driver integrated


    Original     		PDF 12-Nov-13 DS-100781

    CHT-TIT9570A

    Abstract: sic normally on fet
    Text: The Leader in High Temperature Semiconductor Solutions Version: 1.2 22-Apr-11 Last Modification Date CHT-THEMIS Power Transistor Driver Controller General description Features CHT-THEMIS is the controller block of the Power Transistor Driver solution CHTTHEMIS and CHT-ATLAS. The chipset is


    Original     		PDF 22-Apr-11 DS-100782 CHT-TIT9570A sic normally on fet

    SJEP120R125

    Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
    Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2


    Original     		PDF

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


    Original     		PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide

    Untitled

    Abstract: No abstract text available
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description


    Original     		PDF IJW120R100T1

    Untitled

    Abstract: No abstract text available
    Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 m max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application •    Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features  


    Original     		PDF APTJC120AM13VCT1AG SJEC120R100 SDC30S120

    Untitled

    Abstract: No abstract text available
    Text: XTRM Series XTR26010 HIGH TEMPERATURE INTELLIGENT GATE DRIVER FEATURES DESCRIPTION ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Supply voltage from 4.5V to 40V. ▲ Integrated charge-pump inside pull-up drivers allowing 100% duty-cycle PWM control signal.


    Original     		PDF XTR26010 DS-00390-13

    MHS2501

    Abstract: MHS2501KF
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1 Amp SOLID STATE RELAYS DEVICES LEVELS AVAILABLE MHS2501 Series COTS CLASS H CLASS K (Consult Table 3 for Part Number Designations)


    Original     		PDF MHS2501 T4-LDS-0153 MHS2501KF

    SiC-JFET

    Abstract: SiC JFET MHS2501 175C
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1 Amp SOLID STATE RELAYS DEVICES LEVELS AVAILABLE MHS2501 Series COTS CLASS H CLASS K (Consult Table 3 for Part Number Designations)


    Original     		PDF MHS2501 SiC-JFET SiC JFET 175C

    DIN 18541

    Abstract: Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book leds and displays vishay semiconductors vHN-db2101-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vHN-db2101-0409 DIN 18541 Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521