for atmel 416 24c16 an
Abstract: low cost eeprom programmer circuit diagram 93C461 how to reset atmel 24c16 24w04 program 24c04 CHIP 8-PIN 24c16 93c566 24w02 93CS561 93C46A1
Text: Non-Volatile Memory Products Non-Volatile Memory Products Package Dimensions Table of Contents EEPROM Standard Products Family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .184
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64-Lead
VEH64A
for atmel 416 24c16 an
low cost eeprom programmer circuit diagram
93C461
how to reset atmel 24c16
24w04 program 24c04
CHIP 8-PIN 24c16
93c566
24w02
93CS561
93C46A1
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130nm CMOS
Abstract: sonos Cypress Semiconductor sonos nvsram
Text: Non-Volatile Memory Trends By Rajesh Manapat, Non-Volatile Memory Business Unit Director, and Ritesh Mastipuram, Product Manager, Cypress Semiconductor Corp. Executive Summary This article focuses on emerging non-volatile memories and the differences between them. Some of these technologies are
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GR3281
Abstract: ram 62256 43256 43256 static ram 55257 62256 55257 RAM 62256 RAM STATIC RAM 62256 16 STATIC RAM 62256
Text: GR3281 32K x 8 NON-VOLATILE RAM GR3281 (32K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR3281 is a 32768 word by 8 bits (32K x 8) non-volatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR3281
GR3281
2000/95/EC
ram 62256
43256
43256 static ram
55257
62256
55257 RAM
62256 RAM
STATIC RAM 62256
16 STATIC RAM 62256
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arm microprocessor data sheet
Abstract: M68HC912DG128 MICROPROCESSOR 68000 manual MON08
Text: HI-WAVE NVMC Non Volatile Memory Control Utility Copyright 1998 HIWARE HI-WAVE Product Manual Manual Date HI-WAVE - Non Volatile Memory Control Utility 07/98 © Copyright 1998 HIWARE HI-WAVE Table of Contents 3 Contents Non Volatile Memory Control Utility . . . . . . . . . . . . . . . . . . . . 5
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TFT MOBILE DISPLAY I2C interface
Abstract: TFT LCD display Human Machine Interface schematic lvds 20 pin lcd panel
Text: LM8342 LM8342 Programmable TFT V COM Calibrator with Non-Volatile Memory Literature Number: SNOSAM0A LM8342 Programmable TFT VCOM Calibrator with Non-Volatile Memory General Description Features The LM8342 is an integrated combination of a non-volatile register 7 bits EEPROM and a DAC controlled current
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LM8342
LM8342
LM8342,
TFT MOBILE DISPLAY I2C interface
TFT LCD display Human Machine Interface schematic
lvds 20 pin lcd panel
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M34C02-L
Abstract: 24LC21 M24164 M24164-W M34C02 M34C02-W ST24FC21 ST24FW21 ST24LC21 SPECIFIC CUSTOMIZED DEDICATED SOLUTIONS
Text: Applications Specific Standard Products Serial Non-Volatile Memories www.st.com/eeprom Optimized solution offer ASSPs are built on a common non-volatile memory technology platform, allowing a non-volatile memory core to be combined with dedicated logic on the same chip. ASSPs include serial industry standard I2C,
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400KHz
FLASSP/0901
M34D64
M34C02-L
24LC21
M24164
M24164-W
M34C02
M34C02-W
ST24FC21
ST24FW21
ST24LC21
SPECIFIC CUSTOMIZED DEDICATED SOLUTIONS
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LPC1700
Abstract: LPC1100 LPC1300 LPC2000
Text: AN11008 Flash based non-volatile storage Rev. 1 — 5 January 2011 Application note Document information Info Content Keywords Flash, EEPROM, Non-Volatile Storage Abstract This application note describes the implementation and use of a library that allows on-chip flash memory to be used for non-volatile storage, in a
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AN11008
LPC1700
LPC1100
LPC1300
LPC2000
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M41Txx
Abstract: SO16 M48Z35A M48T35A m48t35 M48Z128 M48Z129 M48Z2M1 M48Z35 M48Z512A
Text: Non-Volatile -Volatile RAM Non RAM Selection Tables Selection Tables STMicroelectronics NVRAM Selection Tables July 2000 ZEROPOWER M48Zxxx TIMEKEEPER M48Txxx M48STxxx NVRAM SUPERVISOR M40Zxxx M40SZxxx M48Txxx Optional Low Power SRAM M68Zxxx SERIAL RTC
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M48Zxxx
M48Txxx
M48STxxx
M40Zxxx
M40SZxxx
M68Zxxx
M41Txx
M41STXX
PTNV0013
M41Txx
SO16
M48Z35A
M48T35A
m48t35
M48Z128
M48Z129
M48Z2M1
M48Z35
M48Z512A
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68HC12
Abstract: 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola transistor cross reference
Text: Freescale Semiconductor, Inc. Order this document by AN1837/D Motorola Semiconductor Application Note Freescale Semiconductor, Inc. AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction
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AN1837/D
AN1837
68HC12
68HC16
AN1837
M68HC08
M68HC12
FLASH CROSS
motorola transistor cross reference
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Untitled
Abstract: No abstract text available
Text: LOW-COST NON-VOLATILE INFINITELY RECONFIGURABLE PLD MachXO Family Crossover Programmable Logic Devices The MachXO family of non-volatile, infinitely reconfigurable Programmable Logic Devices PLDs is designed for applications traditionally implemented using
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1-800-LATTICE
I0176A
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REGULATOR S 812
Abstract: S-81250AG S81230AG S-2212R s812 S2212R S-81230AG
Text: SE IK O INSTRUMENTS U H fil D E I Ö1S3M43 Q D D D IU 2 | T-46-23-08 ’ S NON-VOLATILE MEMORY/NON-VOLATILE RAM f g g g ★Under development APPLICATIONS The non-volatile RAM NV RAM) is a non-volatile CMOS • Constants setting memory combining a static CMOS RAM and a non-volatile
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1S3M43
T-46-23-08
38mV/°
S-81230AG)
S-80230AG
S-80250AG
S-81230AG
S-81250AG
S-81250HG
TYP30
REGULATOR S 812
S81230AG
S-2212R
s812
S2212R
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HC71
Abstract: No abstract text available
Text: Honeywell NON-VOLATILE RAM Advance Information 16K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7116 FEATURES • Non-volatile and NDRO Non-destructive read out • Synchronous Operation • Unlimited read/write (>1 E15 cycles) • CMOS Input Levels (TTL Optional)
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HC7116
300mW
HC71
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HC7464
Abstract: TTL 7464
Text: Honeywell NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM- MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out 1 jis Read Cycle Time • Unlimited read/write (>1E15 cycles) 250 ns Write Cycle Time Power off data retention
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HC7464
500mW
HC7464
TTL 7464
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Untitled
Abstract: No abstract text available
Text: b3E D 4SS1Ô72 DDDIGTS HONEYI i l ELL / S NON-VOLATILE RAM Honeywell IH0N3 Ô2fl S E C Advance Information 16K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7116 FEATURES • Non-volatile and NDRO Non-destructive read out • Synchronous Operation • Unlimited read/write (>1E15 cycles)
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HC7116
300mW
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S2212R
Abstract: No abstract text available
Text: SEIK O INSTRUMENTS U.S.A., INC. 2990 W. Lomita Blvd. Torrance, California 90505 213 530-8777 S-2212R 256 Word X 4 Bit NON-VOLATILE CMOS STATIC RAM S-2212R is a Non-Volatile CMOS Memory, one to one combination of static MOS RAM and Non-Volatile Electric Erasable Programmable Read Only
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S-2212R
S-2212R
X2212
Cl-100pF
S2212R
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SEIKO Year of assembly
Abstract: S22H12I01
Text: S-22H12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22H12R/I is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and
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S-22H12R/I
256-word
S-22H12R/I
X2212
Pi133
A123443
SEIKO Year of assembly
S22H12I01
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S-22S12I
Abstract: S-22S12R X2212 seiko s22s
Text: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and
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S-22S12R/I
256-word
S-22S12R/I
X2212
10mAtyp.
S-22S12I
S-22S12R
seiko s22s
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SK 8051 S
Abstract: X2444 S24S45 S-24 S-24H30 S-24H45 S-24S30 S-24S45
Text: S-24 Series SERIAL NON-VOLATILE RAM The S-24 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. and The organization is 16-word x 16-bit (total 256 bits) for the S-24H45 and
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16-word
16-bit
S-24H45
S-24S45,
S-24H30
S-24S30.
S-24H45:
X2444
S-24S45:
S-24H30:
SK 8051 S
S24S45
S-24
S-24S30
S-24S45
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S22H10R
Abstract: No abstract text available
Text: S-22H10R/I 64-word x 4-bit parallel NON-VOLATILE RAM The S-22H10R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 64-word x 4-bit (total 256 bits) and the
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S-22H10R/I
64-word
S-22H10R/I
X2210
S22H10R
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SK 8051 S
Abstract: No abstract text available
Text: S-24S45R/I 16-word X16-bit Serial NON-VOLATILE RAM The S-24S45R/I is a non-volatile CM OS RAM, com p o se d of a CMOS static RAM and a non-volatile e le ctrica lly erasable program m able m em ory E2PROM to backup the SRAM. The organization is 16-word x
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S-24S45R/I
16-word
X16-bit
S-24S45R/I
16-bit
1E3443
SK 8051 S
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Non-Volatile RAM
Abstract: No abstract text available
Text: NON-VOLATILE RAM PRODUCTS DATABOOK 2nd EDITION MARCH 1998
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honeywell mram
Abstract: No abstract text available
Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out
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0D00fl4D
1x106
1x1014N/cm2
1x101
1x106rad
honeywell mram
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8085 microprocessor ram 4k
Abstract: microprocessor Rockwell R6500 8051 TLx rockwell 6500
Text: R2000 Memory Products 64 * Rockwell X R2000 8 NON-VOLATILE RAM ^ 6 Product Preview DESCRIPTION FEATURES The Rockwell R2000 Non-Volatile Random Access Memory NVRAM is a conventional 64 x 8 static random access memory (RAM) overlaid bit-for-bit with a 64 x 8 non-voltatile
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R2000
R2000
10-Year
R6500,
R65C00,
R65C00/21,
R6500/41
8085 microprocessor ram 4k
microprocessor Rockwell R6500
8051 TLx
rockwell 6500
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sram 2112
Abstract: 2114 static ram STATIC RAM 2114
Text: S-22S10R/I 64-word X4-bit parallel NON-VOLATILE RAM The S-22S10R/I is a non-volatile CM OS RAM, co m p o se d of a CM OS static RAM and a non-volatile e le ctrically erasable p ro gram m ab le m em ory E2PROM to backup the SRAM. The organization is 64-w ord x 4-bit (total 256 bits) and the
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S-22S10R/I
64-word
S-22S10R/I
X2210
D01fifi4
sram 2112
2114 static ram
STATIC RAM 2114
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