NON VOLATILE FERROELECTRIC MEMORY Search Results

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM's non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

BR24CF16F

Abstract: sis00
Contextual Info: Memory IC 16kbit serial ferroelectric memory BR24 CF 16 F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR 24C F16F The BR24CF16F is a non-volatile ferroelectric m em ory developed for use in ROHM’s non-volatile m em ory technolo­ gy and ferroelectric technology. Using a ferroelectric m em ory enables faster w riting speeds than EEPROM and flash

non volatile ferroelectric memory

Abstract: SYFR8128FK-15 SYFR8128FK
Contextual Info: 128K x 8 FRAM SYFR8128FK-15 Issue 1.0 August 2001 Description The SYFR8128FK is a 2.7~3.6V 1Mbit non volatile memory module employing advanced ferroelectric devices. A ferroelectric random access memory or FRAM is nonvolatile but operates similar to SRAM.

Contextual Info: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-6E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-5E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13108-4E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R1002

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-3E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R2001PFTN-GE1

Abstract: MB85R2001
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-3Ea Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-5E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R2002

Abstract: MB85R2002PFTN-GE1
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-2E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R2001

Abstract: MB85R2001PFTN-GE1
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-7E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R1001

Abstract: MB85R1001PFTN-GE1
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-6Ea Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R1001

Abstract: MB85R1001PFTN-GE1 FPT-48P-M25
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-5E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-4E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-8E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

PSEUDO SRAM

Abstract: MB85R1002 din 3102
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Fujitsu IR c code

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-1E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

FUJITSU FRAM

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-5E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.