3A425
Abstract: 3A525
Text: Model 3A425 Rev. A Pico Balun 50? to 25? Balanced Description The 3A425 is a low profile balanced to unbalanced transformer designed for pushpull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. These compact Xinger surface mount baluns are ideal
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3A425
3A425
NMT900
3A525
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impedance transformer 50 ohm
Abstract: No abstract text available
Text: 3A412 SMT Low Impedance Balun VER11/3/00 Description: The 3A412 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. The 3A412 is ideal for high volume
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3A412
VER11/3/00
NMT900
-55oC
125oC
3A412
impedance transformer 50 ohm
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BL01RN1-A62
Abstract: PF0031 Hitachi DSA00175
Text: PF0031 MOS FET Power Amplifier Module for Mobile Phone ADE-208-461 Z 1st Edition July 1, 1996 Application PF0031: For NMT900 890 to 925 MHz Features • High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t Pin Arrangement
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PF0031
ADE-208-461
PF0031:
NMT900
BL01RN1-A62-001
D-85622
BL01RN1-A62
PF0031
Hitachi DSA00175
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nmt-450
Abstract: NMT450 AK2339 NMT-900 ffsk AKD2339 AKM AND oscillator ASAHI circuit diagram of dtmf generator KASEI
Text: AK2339 ANALOG CELLULAR ICs AK2339 CMOS Base-Band Processor for NMT450/900 1. Single chip Base-Band IC for NMT450 and NMT900 2. CMOS compandor 3. Voice signal processing circuits 64-pin LQFP 10 10 1.4 mm 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. signal decoding and transponding circuits
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AK2339
NMT450/900
NMT450
NMT900
64-pin
AKD2339
AK2339
jp/akm/en/product/ak2339/ak2339
nmt-450
NMT-900
ffsk
AKD2339
AKM AND oscillator
ASAHI
circuit diagram of dtmf generator
KASEI
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Untitled
Abstract: No abstract text available
Text: Description The 3A412 is a low profile balanced to unbalanced transformer in an easy to use surface mount package covering GSM, D-AMPS, IDEN and NMT900 push-pull amplifier and mixer applications. The 3A412 has an unbalanced port impedance of 50Ω and balanced port
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3A412
NMT900
3A412
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101902
Abstract: No abstract text available
Text: Model 3A425 Rev. A Pico Balun 50Ω to 25Ω Balanced Description The 3A425 is a low profile balanced to unbalanced transformer designed for pushpull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. These compact Xinger surface mount baluns are ideal
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3A425
3A425
NMT900
res76
101902
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0.25 Ohms 3 watt
Abstract: 3A425
Text: Model 3A425 Rev. D Xinger Balun 50Ω to 25Ω Balanced Description The 3A425 is a low profile balanced to unbalanced transformer designed for pushpull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. These compact Xinger surface mount baluns are ideal
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3A425
3A425
NMT900
0.25 Ohms 3 watt
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3A425
Abstract: No abstract text available
Text: Model 3A425 Rev. C Xinger Balun 50Ω to 25Ω Balanced Description The 3A425 is a low profile balanced to unbalanced transformer designed for pushpull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. These compact Xinger surface mount baluns are ideal
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3A425
3A425
NMT900
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Untitled
Abstract: No abstract text available
Text: Description The 3A425 is a low profile balanced to unbalanced transformer in an easy to use surface mount package covering GSM, D-AMPS, IDEN and NMT900 applications. The 3A425 has an unbalanced port impedance of 50Ω and balanced port impedances of 25Ω to ground
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3A425
NMT900
3A425
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101902
Abstract: No abstract text available
Text: Model 3A425 Rev. B 50 Xinger Balun to 25 Balanced Description The 3A425 is a low profile balanced to unbalanced transformer designed for pushpull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. These compact Xinger surface mount baluns are ideal
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3A425
3A425
NMT900
yea-176
101902
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IVC CMOS
Abstract: Motorola phone schematic diagram antenna diversity switch DCS1800 DCS1900 MRFIC0903 Nippon capacitors
Text: MOTOROLA Order this document by MRFIC0903/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0903 Broadband GaAs Switch The MRFIC0903 is an integrated GaAs SPDT switch designed for transceivers operating in the 100 MHz to 2.0 GHz frequency range. The design
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MRFIC0903/D
MRFIC0903
MRFIC0903
DCS1800,
DCS1900,
IVC CMOS
Motorola phone schematic diagram
antenna diversity switch
DCS1800
DCS1900
Nippon capacitors
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MPS-080917N-85
Abstract: NMT-900
Text: MPS-080917N-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 0.8 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-080917N-85 is a low noise , high dynamic range amplifier designed
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MPS-080917N-85
MPS-080917N-85
NMT-900
080917N
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ifr 2968 Operating Manual
Abstract: TETRA radio MPT1343 af options m1 k 2968 NMT450 tetra dqpsk modulation tetra TNC connector connection diagram Multimeter calibration manual
Text: Wireless 2968 TETRA Radio Test Set The 2968 TETRA Radio Test Set for comprehensive terminal and base station testing • TETRA terminal and base station test options • Trunked Mode and optional Direct Mode control a TETRA radio and then make measurements of key transmitter and receiver RF and audio parameters. Measurements are
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Tuner sharp QPSK
Abstract: 9031 code fir filter Numerically Controlled Oscillator HSP50210 HSP50214 HSP50214VC HSP50214VI
Text: February 2000 Programmable Downconverter Features Description • Up to 52 MSPS Front-End Processing Rates CLKIN and 35 MSPS Back-End Processing Rates (PROCCLK) Clocks May Be Asynchronous The HSP50214 Programmable Downconverter converts digitized IF data into filtered baseband data which can be
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HSP50214
100dB
255-Tap
625kHz
Tuner sharp QPSK
9031
code fir filter
Numerically Controlled Oscillator
HSP50210
HSP50214VC
HSP50214VI
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BL01RN1-A62-001
Abstract: No abstract text available
Text: PF0016 fclE J> • MM Th SüS 0 0 1 3 b l 2 133 « H i m HITACHI/ OPTOELECTRONICS MOS FET POWER AMPLIFIER 45 42 35 NMT900 Band 890-915 MHz R1.6 ■ FEATURES • Small Package 12 X 45 X 6.5 mm3 • Low Power Control Current 300|iA • Good Stability of Load Change Load VSW R > 20
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PF0016
NMT900
PF0016-
44TLi2[
BL01RN1-A62-001
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Untitled
Abstract: No abstract text available
Text: PF0026 Preliminary MOS FET Power Amplifier Module for NMT900 Handy Phone 1Surface Mounted Small Package 1cc, 3g with Shielded Cover High Efficiency 47% Typ at Actual Output Condition 1.2W Low Voltage Operation 6V Low Power Control Current 300 jxA 2 5 ± 0 .5
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PF0026
NMT900
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SAW filters
Abstract: hwcb
Text: HWCB208 Tentative SAW Filters HITACHI Electrical Characteristics NMT900/GMS Tx Item Frequency (M H z) Min Value Typ Max Units Ambient Tem perature 3.0 3.5 dB 25± 2°C 3.5 4.0 0.5 1.0 dB -30- 70°C dB 25+2°C Inband level 935.0 - 960.0 Inband ripple 935.0 - 960.0
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HWCB208
NMT900/GMS
SAW filters
hwcb
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81SG
Abstract: FEP CONNECTOR
Text: CUSTOM PRODUCTS BFA, CCR & FSC On Cable Assembly Request Form COMPANY NAME Requestor STREET ADDRESS CITY STATE ZIP TELEPHONE EAMP. ETACS. NMT900, GSM, PCN, ADC. US-DIGITAL. CT1. CT2. DECT. LMR. GPS. BS/CS, ISM. LAN. TRANSCEIVER, Other [MOBILE, H/H, BASE, OTHER)
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NMT900,
81SG
FEP CONNECTOR
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Untitled
Abstract: No abstract text available
Text: HWCA208 Tentative SAW Filters HITACHI Electrical Characteristics NMT900/GMS Tx Item Frequency (M H z) Min Value Typ Max Units Ambient Tem perature dB 25± 2°C Inband level 890.0 - 915.0 2.5 3.5 3.0 4.0 Inband ripple 8 9 0 .0 -9 1 5 .0 0.5 1.0 Stopband attenuation (1)
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HWCA208
NMT900/GMS
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Untitled
Abstract: No abstract text available
Text: PF0031 MOS FET Power Amplifier Module for Mobile Phone HITACHI ADE-208-461 Z 1st Edition July 1, 1996 Application PF0031: For NMT900 890 to 925 MHz Features • High stability: Load VSWR ~ 20:1 • Low power control current: 400 |J,A • Thin package: 5 mm t
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PF0031
ADE-208-461
PF0031:
NMT900
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145mHz
Abstract: safc902.5mc safc902 safc942.5
Text: iFor NMT900/GSM: RF Interstage Filters ÎSC44 Package maw SAFC902.5MCW70T Part Number : SAFC902.5MWC70T Nominal Center Frequency fo) (MHz) ] 902.5 Insertion Loss (dB) i ) 8 9 0 - 9 1 5MHz 3.5 max. i i ) 500—820MHz 40 min. iii) 935—960MHz 25 min. iv) 1000 “ 1500MHz
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NMT900/GSM:
SAFC902
5MCW70T
5MWC70T
500--820MHz
935--960MHz
1500MHz
1500--2000MHz
890--915MHz)
145mHz
safc902.5mc
safc942.5
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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Untitled
Abstract: No abstract text available
Text: RFOOI5B S e rie s M O S F E T P O W E R A M P L IF IE R • FEATURES • Small Package 12 X 45 X 6.5 mm3 • Low Voltage Operation 6V • Low Power Control Current 300 i.A • Good Stability of Load Change Load VSWR > 20 l. P i n / V ^ ORDERING INFORMATION
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PF0015B
PF0016B
NMT900
PF0017B
PF0015B
849MHz,
824MHz,
20sec
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TL272
Abstract: MRFIC0903R2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0903 Broadband GaAs Sw itch The MRFIC0903 is an integrated GaAs SPDT switch designed for transceivers operating in the 100 MHz to 2.0 GHz frequency range. The design utilizes Motorola’s advanced GaAs RF process to yield superior performance in
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MRFIC0903
DCS1800,
DCS1900,
NMT900;
MRFIC0903
TL272
MRFIC0903R2
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