Untitled
Abstract: No abstract text available
Text: RT9174 Preliminary Triple Linear Regulator Controllers General Description Features The RT9174 is a triple linear regulator controller designed for motherboard application. z Integrated Three Linear Controllers in a SOP-8 Package z Driving NPN or NMOSFET Sourcing > 100mA and Sinking ( > 5mA) Driver
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RT9174
RT9174
100mA)
DS9174-05
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RT9712D
Abstract: RT9712 RT9712C RT9712A
Text: RT9712 90mΩ Ω, 1A/1.5A High-Side Dual Power Switches with Flag General Description Features The RT9712 power-distribution switches are designed to fulfill the applications in heavy capacitive loads and shortcircuit situations. The device incorporates two 90mΩ NMOSFET power switches to fit power distribution systems
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RT9712
RT9712
DS9712-03
RT9712D
RT9712C
RT9712A
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Untitled
Abstract: No abstract text available
Text: Datasheet Controller ICs for High Side NMOSFET BD2270HFV General Description Key Specifications BD2270HFV is a gate driver for high side N-Channel MOSFET that comes with a discharge circuit for the output capacitive load. An internal charge pump enables the IC to drive the gate of an external high
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BD2270HFV
BD2270HFV
500pF)
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RTQ035N03
Abstract: 0744
Text: SPICE PARAMETER RTQ035N03 by ROHM TR Div. * RTQ035N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTQ035N03
RTQ035N03
0000E-6
541E-6
000E-3
682E-3
0000E6
73E-12
0744
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RSS130N03
Abstract: No abstract text available
Text: SPICE PARAMETER RSS130N03 by ROHM TR Div. * RSS130N03 NMOSFET model * Date: 2006/10/04 * This model includes a diode between source and drain. *D G S .SUBCKT RSS130N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS130N03
RSS130N03
0000E-6
18E-6
0000E-3
2887E-3
0000E6
3046E-9
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QS5U16
Abstract: No abstract text available
Text: SPICE PARAMETER QS5U16 by ROHM TR Div. * QS5U16 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT QS5U16 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1
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QS5U16
QS5U16
0000E-6
169E-6
000E-3
540E-3
0000E6
37E-12
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2057
Abstract: d 966 RTL035N03
Text: SPICE PARAMETER RTL035N03 by ROHM TR Div. * RTL035N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RTL035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTL035N03
RTL035N03
0000E-6
967E-6
000E-3
404E-3
0000E6
79E-12
2057
d 966
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rds 4501
Abstract: 4501 4501 d RSS125N03
Text: SPICE PARAMETER RSS125N03 by ROHM TR Div. * RSS125N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS125N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS125N03
RSS125N03
0000E-6
90E-6
0000E-3
4934E-3
0000E6
3039E-9
rds 4501
4501
4501 d
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SP8K24
Abstract: No abstract text available
Text: SPICE PARAMETER SP8K24 by ROHM TR Div. * SP8K24 NMOSFET model * Date: 2006/10/12 * This model includes a diode between source and drain. *D G S .SUBCKT SP8K24 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1
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SP8K24
SP8K24
0000E-6
04E-6
000E-3
6579E-3
0000E6
1114E-9
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KP103
Abstract: 95371 330E kp10330e6 KP1033
Text: SPICE PARAMETER QS6K1 by ROHM TR Div. * QS6K1 NMOSFET model * Date: 2006/09/05 * This model includes a diode between source and drain. *D G S .SUBCKT QS6K1 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=10.330E-6
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0000E-6
330E-6
000E-3
011E-3
0000E6
11E-12
453E-12
581E-12
0000E-3
KP103
95371
330E
kp10330e6
KP1033
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3212
Abstract: M5248
Text: SPICE PARAMETER US5U1 by ROHM TR Div. * US5U1 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT US5U1 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=12.595E-6
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0000E-6
595E-6
000E-3
0000E6
39E-12
724E-12
550E-12
0000E-3
8843E-12
3212
M5248
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MP6K62
Abstract: mp6k 6-20P
Text: SPICE PARAMETER MP6K62 by ROHM TR Div. * MP6K62 NMOSFET model * Date: 2008/01/29 *D G S .SUBCKT MP6K62 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 11.3m D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1
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MP6K62
MP6K62
0000E-6
704E-6
000E-3
000E6
0000E-3
6857E-12
mp6k
6-20P
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RRS100N03
Abstract: 3573 M8122 M 9639 RRS100N
Text: SPICE PARAMETER RRS100N03 by ROHM TR Div. * RRS100N03 NMOSFET model * Date: 2007/11/14 *D G S .SUBCKT RRS100N03 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 2.1m D2 11 21 DDG D3 22 21 DDG R2 2 22 14 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RRS100N03
RRS100N03
0000E-6
75E-6
0000E-3
000E6
3573
M8122
M 9639
RRS100N
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RSS090N03
Abstract: diode 10e d 5027 16552 650 DIODE
Text: SPICE PARAMETER RSS090N03 by ROHM TR Div. * RSS090N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS090N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS090N03
RSS090N03
0000E-6
10E-6
0000E-3
7183E-3
0000E6
37E-12
diode 10e
d 5027
16552
650 DIODE
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5609 transistor
Abstract: DATASHEET 5609 DATASHEET 5609 transistor transistor 5609 5609 S 5609 SP8M21
Text: SPICE PARAMETER SP8M21 by ROHM TR Div. * SP8M21_N NMOSFET model * Date: 2006/10/12 *D G S .SUBCKT SP8M21_N 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=110.04E-6 + RS=10.000E-3 + RD=5.6579E-3 + VTO=2.1730
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SP8M21
SP8M21
0000E-6
04E-6
000E-3
6579E-3
0000E6
1114E-9
5609 transistor
DATASHEET 5609
DATASHEET 5609 transistor
transistor 5609
5609
S 5609
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R5007ANX
Abstract: 0943 00E-6
Text: SPICE PARAMETER R5007ANX by ROHM TR Div. * R5007ANX NMOSFET model * Date: 2007/07/26 *D G S .SUBCKT R5007ANX 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 10p D1 3 1 DDS R1 1 11 RTH .762 D2 11 21 DDG D3 22 21 DDG R2 2 22 27 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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R5007ANX
R5007ANX
0000E-6
641E-6
000E-3
0000E6
0000E-3
00E-6
0943
00E-6
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rss065n06
Abstract: 10-25 RD 4512
Text: SPICE PARAMETER RSS065N06 by ROHM TR Div. * RSS065N06 NMOSFET model * Date: 2007/10/25 *D G S .SUBCKT RSS065N06 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 6.67m D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS065N06
RSS065N06
0000E-6
64E-6
000E-3
000E6
0000E-3
10-25 RD
4512
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M56723
Abstract: M5672 SP8K63 M3909
Text: SPICE PARAMETER SP8K63 by ROHM TR Div. * SP8K63 NMOSFET model * Date: 2008/01/23 *D G S .SUBCKT SP8K63 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 7.96m D2 11 21 DDG D3 22 21 DDG R2 2 22 18 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1
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SP8K63
SP8K63
0000E-6
46E-6
000E-3
000E6
0000E-3
M56723
M5672
M3909
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RUF015N02
Abstract: No abstract text available
Text: SPICE PARAMETER RUF015N02 by ROHM TR Div. * RUF015N02 NMOSFET model * Date: 2007/03/22 * This model includes a diode between source and drain. *D G S .SUBCKT RUF015N02 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RUF015N02
RUF015N02
0000E-6
948E-6
000E-3
782E-3
0000E6
72E-12
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RSS070N05
Abstract: 74102
Text: SPICE PARAMETER RSS070N05 by ROHM TR Div. * RSS070N05 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT RSS070N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS070N05
RSS070N05
0000E-6
64E-6
000E-3
7439E-3
0000E6
95E-12
74102
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Untitled
Abstract: No abstract text available
Text: SPICE PARAMETER QS5K2 by ROHM TR Div. * QS5K2 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT QS5K2 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=31.169E-6
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0000E-6
169E-6
000E-3
540E-3
0000E6
37E-12
970E-12
93E-12
0000E-3
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RUM003N02
Abstract: 36144E VTO71 RB1000
Text: SPICE PARAMETER RUM003N02 by ROHM TR Div. * RUM003N02 NMOSFET model * Date: 2008/01/17 *D G S .SUBCKT RUM003N02 1 2 3 M1 11 2 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH .565 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=4.9173E-6 + RS=10.000E-3
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RUM003N02
RUM003N02
0000E-6
9173E-6
000E-3
000E6
0000E-3
144E-15
36144E
VTO71
RB1000
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am 5869
Abstract: RS1937 RSS110N03
Text: SPICE PARAMETER RSS110N03 by ROHM TR Div. * RSS110N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS110N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS110N03
RSS110N03
0000E-6
44E-6
0000E-3
3152E-3
0000E6
68E-12
am 5869
RS1937
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GH mosfet
Abstract: half-bridge variable frequency drive circuit diagram AN-6003 MLP16 SOIC-16 FAN5110MX fan5110
Text: FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver Features Description Two-phase, N-channel MOSFET driver in a Single FAN5110 contains two N-channel MOSFET drivers on a single die in one package. It replaces two single-phase drivers in a multiple-phase PWM design. Each phase is
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FAN5110
FAN5110
GH mosfet
half-bridge
variable frequency drive circuit diagram
AN-6003
MLP16
SOIC-16
FAN5110MX
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