NMOS TRANSISTOR 0.35 UM Search Results

nmos transistor 0.35 um

Abstract: transistor 548
Contextual Info: 0.30um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ Starting material P(100), Non-EPI ƒ Well Retrograde twin well structure ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide Thermally grown oxide of 73A thickness in electrical

mos rm3 data

Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular

MOS RM3

Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing

MOS RM3

Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

MOS RM3

Contextual Info: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing

1 kilo ohm resistor specifications

Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •

XH035 library

Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

cmos transistor 0.35 um

Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
Contextual Info: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS

0.35Um 1P4M

Abstract: nmos transistor 0.35 um
Contextual Info: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS

2P4M

Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Contextual Info: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)

2P4M P 82

Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
Contextual Info: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um

TRANSISTOR 545

Contextual Info: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel

all transistor

Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Contextual Info: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation

bi 370 transistor

Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
Contextual Info: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

transistor bI 240

Abstract: transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG
Contextual Info: 0.25um 1P5M Logic 2.5V / 5.0V / 30V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) Channel Gate Oxide ƒ ƒ ƒ ƒ ƒ Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

2P4M

Abstract: 2P4M in nmos transistor 0.35 um cmos transistor 0.35 um 0.35Um 2P4M 2P4M datasheet 0.35um 2p4m cmos 0.35Um
Contextual Info: 0.35um 2P4M Embedded Flash 3.3V updated in 2005.03.18 Features ƒ Voltage Logic/Cell 3.3V/10V ƒ Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization Barrier Metal

0.35uM STI

Abstract: MAGNACHIP 0.35um 0.32um CMOS
Contextual Info: 0.25um 1P5M Generic 2.5V / 3.3V or 2.5V / 5V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

magnachip 0.18um

Abstract: NMOS transistor 0.18 um CMOS hv 082 MagnaChip Semiconductor HV800 magnachip 0.18um CMOS
Contextual Info: 0.18um 1P4M High Voltage 30V updated in 2005.03.29 Features Voltage Logic(LV,MV ,High Voltage) ƒ 1.8V/5V/30V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV, MV-Device )

nmos transistor 0.35 um

Contextual Info: 0.25um 1P5M Logic 2.5V / 3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

UM 66 datasheet

Abstract: UM 66 in
Contextual Info: 0.22um 1P5M Logic 2.5V /3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ Vdd Core/IO Well Isolation Transistor Channel Gate Oxide Gate Material LDD & Source/Drain ƒ Metallization Barrier Metal Metal Stacked Via ƒ Lithography ƒ Speed (nsec/gate) 2.5V/3.3V

Contextual Info: 0.25um 2P5M Mixed Signal 2.5V / 3.3V updated in Oct 01, 2004 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

1P2M

Contextual Info: 2.0um 1P2M High Voltage 200V / 5V updated in 2005.03.30 Features ƒ Voltage Logic,High Voltage 5V/5V,200V/5V ƒ Starting material SOI Wafer (BOX 2.5um, Si 7.5um), P-type (100), 50~100 ohm-cm ƒ Well Structure CMOS Quadruple-Well (Hnwell, Hpwell for HV-Device,