NH TRANSISTOR Search Results
NH TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LP395Z/LFT1 |
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Ultra Reliable Power Transistor 3-TO-92 |
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LM395T/NOPB |
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Ultra Reliable Power Transistor 3-TO-220 0 to 125 |
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ULN2003ANS |
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High-Voltage, High-Current Darlington Transistor Arrays 16-SO |
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ULQ2003ADRG4 |
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Darlington Transistor Arrays 16-SOIC |
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LP395Z/NOPB |
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Ultra Reliable Power Transistor 3-TO-92 -40 to 125 |
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NH TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: R High-Precision Fiber-optic Amplifier E3X-NH The E3X-NH Employs a 16-Bit Processor as An Industry First H An Automatic Sensitivity Adjustment feature allows stable detection of objects in frequently changing environments H Three teach modes for optimal sensing |
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16-Bit 1-800-55-OMRON | |
E3X-NH41
Abstract: E3X-NH11 E32-T16P E3XNH51 OMRON E32-D32 E32-L25A E32-T24 E39-F4 E3X-NH21 E3X-NH51
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16-Bit 1-800-55-OMRON E3X-NH41 E3X-NH11 E32-T16P E3XNH51 OMRON E32-D32 E32-L25A E32-T24 E39-F4 E3X-NH21 E3X-NH51 | |
electrolytic capacitor 1500 uf with ESR rating
Abstract: ECES1HG682U C2000H ECES1AG ECES1VG472M
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120Hz RCR-2367 electrolytic capacitor 1500 uf with ESR rating ECES1HG682U C2000H ECES1AG ECES1VG472M | |
ECES1VG472MContextual Info: Aluminum Electrolytic Capacitors/ NH Snap-in type Series: NH Discontinued Type: TS • Features Life time : 105°C 2000 h ■Specifications Operating Temp. Range Rated W.V. Range 10 to 100V.DC 160 to 250V.DC 350, 400V.DC -25 to +105 °C -40 to +105 °C Nominal Cap.Range |
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120Hz RCR-2367 ECES1VG472M | |
E32-D21
Abstract: E39-F9 E32-M21 E32-TC200A E32-R21 E32-T16P E32-T84 E32-T11L E32-T12L E32-T22
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E32-T11L E32-T12L E32-T21L E32-T22L E39-F9) E39-R3) E39-R3 E258-E1-2 0797-1M E32-D21 E39-F9 E32-M21 E32-TC200A E32-R21 E32-T16P E32-T84 E32-T11L E32-T12L E32-T22 | |
Contextual Info: FAN5903 Buck Converter with Bypass Mode for 3G / 3.5G / 4G PAs Features • • Description 2.7 V to 5.5 V Input Voltage Range VOUT Range from 0.4 V to 3.5 V or VIN Small Form Factor Inductor o 2012 470 nH or 540 nH for Minimal PCB Area o 2520 1.0 µH for Higher Efficiency |
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FAN5903 FAN5903 | |
SCT595
Abstract: BGB550 SCT-595 high voltage current mirror
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BGB550 350mA 100mA IS21I2 --SCT595 SCT595 BGB550 SCT-595 high voltage current mirror | |
pulse derating curve
Abstract: ZTX415
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ZTX415 ZTX413 20MHz 10KHz pulse derating curve ZTX415 | |
laser LED
Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
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ZTX413 20MHz 10KHz laser LED ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor | |
Contextual Info: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical) |
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VS-GB90SA120U E78996 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
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foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode | |
Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance 5 nH typical |
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VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
GA200SA60SPContextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical) |
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GA200SA60SP OT-227 18-Jul-08 GA200SA60SP | |
GA200SA60SPContextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical) |
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GA200SA60SP OT-227 12-Mar-07 GA200SA60SP | |
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DC200 silicone oil
Abstract: E32-D12 E32-T11R E32-L25A E32-T16P Power AMPLIFIER 6012 UNI F3A buzzer distance sensor E32-T24S E3X-NH11
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E39-R3 E258-E1-3 DC200 silicone oil E32-D12 E32-T11R E32-L25A E32-T16P Power AMPLIFIER 6012 UNI F3A buzzer distance sensor E32-T24S E3X-NH11 | |
E3X-NH41
Abstract: Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L
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91/368/EEC, E258-E1-3 E3X-NH41 Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L | |
L4936N
Abstract: L4936NH
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L4936N/NH 500mA L4936N L493s L4936N L4936NH | |
FDG314P
Abstract: SC70-6
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FDG314P FDG314P SC70-6 | |
L4936N
Abstract: L4936NH MULTIWATT11 L4936
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L4936N/NH 500mA L4936N L4936N L4936NH MULTIWATT11 L4936 | |
L4936N
Abstract: L4936NH MULTIWATT11
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L4936N/NH 500mA L4936N L4936N L4936NH MULTIWATT11 | |
L4936N
Abstract: MULTIWATT11 st automotive L4936NH
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L4936N/NH 500mA L4936N MULTIWATT11 st automotive L4936NH | |
L4936N
Abstract: L4936 L4936NH MULTIWATT11
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L4936N/NH 500mA L4936N L4936N L4936 L4936NH MULTIWATT11 | |
DRCF124TContextual Info: DRCF124T Tentative Total pages page DRCF124T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NH Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open) |
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DRCF124T DRCF124T | |
Contextual Info: 267 Lowell Road, Hudson NH 03051 Tel: 603 598-0070 Fax: (603)598-0075 Helping Customers Innovate, Improve & Grow From: Ram Arvikar VP Quality & Corp. Compliance Subject: Applicability of DFARS 252.225-7014, Preference for Domestic Specialty Metals, Alt. I to Vectron’s products |
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2008-O002) |