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    NH TRANSISTOR Search Results

    NH TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LP395Z/LFT1
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 Visit Texas Instruments Buy
    LM395T/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-220 0 to 125 Visit Texas Instruments Buy
    ULN2003ANS
    Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy
    ULQ2003ADRG4
    Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments
    LP395Z/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 -40 to 125 Visit Texas Instruments Buy

    NH TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: R High-Precision Fiber-optic Amplifier E3X-NH The E3X-NH Employs a 16-Bit Processor as An Industry First H An Automatic Sensitivity Adjustment feature allows stable detection of objects in frequently changing environments H Three teach modes for optimal sensing


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    16-Bit 1-800-55-OMRON PDF

    E3X-NH41

    Abstract: E3X-NH11 E32-T16P E3XNH51 OMRON E32-D32 E32-L25A E32-T24 E39-F4 E3X-NH21 E3X-NH51
    Contextual Info: R High-Precision Fiber-optic Amplifier E3X-NH The E3X-NH Employs a 16-Bit Processor as An Industry First H An Automatic Sensitivity Adjustment feature allows stable detection of objects in frequently changing environments H Three teach modes for optimal sensing


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    16-Bit 1-800-55-OMRON E3X-NH41 E3X-NH11 E32-T16P E3XNH51 OMRON E32-D32 E32-L25A E32-T24 E39-F4 E3X-NH21 E3X-NH51 PDF

    electrolytic capacitor 1500 uf with ESR rating

    Abstract: ECES1HG682U C2000H ECES1AG ECES1VG472M
    Contextual Info: Aluminum Electrolytic Capacitors/ NH Snap-in type Series: NH Discontinued Type: TS • Features Life time : 105°C 2000 h ■Specifications Operating Temp. Range Rated W.V. Range 10 to 100V.DC 160 to 250V.DC 350, 400V.DC -25 to +105 °C -40 to +105 °C Nominal Cap.Range


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    120Hz RCR-2367 electrolytic capacitor 1500 uf with ESR rating ECES1HG682U C2000H ECES1AG ECES1VG472M PDF

    ECES1VG472M

    Contextual Info: Aluminum Electrolytic Capacitors/ NH Snap-in type Series: NH Discontinued Type: TS • Features Life time : 105°C 2000 h ■Specifications Operating Temp. Range Rated W.V. Range 10 to 100V.DC 160 to 250V.DC 350, 400V.DC -25 to +105 °C -40 to +105 °C Nominal Cap.Range


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    120Hz RCR-2367 ECES1VG472M PDF

    E32-D21

    Abstract: E39-F9 E32-M21 E32-TC200A E32-R21 E32-T16P E32-T84 E32-T11L E32-T12L E32-T22
    Contextual Info: E3X-NH E3X-NH Fiber Units Through-beam Sold in Pairs E32-T11L E32-T12L M2.6 x 1.4 dia. 0.45 3 3.2 7 Two hexagon clamping nuts (T = 2.4) Two toothed washers (for M4) Optical fiber, 2.2 dia. Sensing head (nickelplated brass) M4 x 0.7 1.4 dia. 2.4 dia. 3 11


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    E32-T11L E32-T12L E32-T21L E32-T22L E39-F9) E39-R3) E39-R3 E258-E1-2 0797-1M E32-D21 E39-F9 E32-M21 E32-TC200A E32-R21 E32-T16P E32-T84 E32-T11L E32-T12L E32-T22 PDF

    Contextual Info: FAN5903 Buck Converter with Bypass Mode for 3G / 3.5G / 4G PAs Features • •  Description 2.7 V to 5.5 V Input Voltage Range VOUT Range from 0.4 V to 3.5 V or VIN Small Form Factor Inductor o 2012 470 nH or 540 nH for Minimal PCB Area o 2520 1.0 µH for Higher Efficiency


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    FAN5903 FAN5903 PDF

    SCT595

    Abstract: BGB550 SCT-595 high voltage current mirror
    Contextual Info: NE W BGB550 Medium power broadband amplifier Bias, 3 L ext ~ nH MMIC Features Featuresand andBenefits Benefits C, 4 -mirror mirrorbiased biasedRF RFtransistor transistor internal circuit -collector collectorcurrent currentup uptoto350mA 350mA -low lowoperation


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    BGB550 350mA 100mA IS21I2 --SCT595 SCT595 BGB550 SCT-595 high voltage current mirror PDF

    pulse derating curve

    Abstract: ZTX415
    Contextual Info: Not Recommended for New Design Please Use ZTX415 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads


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    ZTX415 ZTX413 20MHz 10KHz pulse derating curve ZTX415 PDF

    laser LED

    Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
    Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF


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    ZTX413 20MHz 10KHz laser LED ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor PDF

    Contextual Info: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical)


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    VS-GB90SA120U E78996 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


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    foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode PDF

    Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical


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    VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    GA200SA60SP

    Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)


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    GA200SA60SP OT-227 18-Jul-08 GA200SA60SP PDF

    GA200SA60SP

    Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)


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    GA200SA60SP OT-227 12-Mar-07 GA200SA60SP PDF

    DC200 silicone oil

    Abstract: E32-D12 E32-T11R E32-L25A E32-T16P Power AMPLIFIER 6012 UNI F3A buzzer distance sensor E32-T24S E3X-NH11
    Contextual Info: E3X-NH Fine Tuning Fiber Photoelectric Sensor High-precision Sensing with Auto- and Manual-tuning Solves All the Problems of Conventional Models Suitable for high-precision positioning using the fine sensitivity adjustment function. Manual-tuning allows threshold adjustments while


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    E39-R3 E258-E1-3 DC200 silicone oil E32-D12 E32-T11R E32-L25A E32-T16P Power AMPLIFIER 6012 UNI F3A buzzer distance sensor E32-T24S E3X-NH11 PDF

    E3X-NH41

    Abstract: Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L
    Contextual Info: E3X-NH Fine Tuning Fiber Photoelectric Sensor High-precision Sensing with Auto- and Manual-tuning Solves All the Problems of Conventional Models Suitable for high-precision positioning using the fine sensitivity adjustment function. Manual-tuning allows threshold adjustments while


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    91/368/EEC, E258-E1-3 E3X-NH41 Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L PDF

    L4936N

    Abstract: L4936NH
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L493s L4936N L4936NH PDF

    FDG314P

    Abstract: SC70-6
    Contextual Info: =M l C O N D U C T O R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P -C h an n el e nh ancem en t mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DM OS technology. This


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    FDG314P FDG314P SC70-6 PDF

    L4936N

    Abstract: L4936NH MULTIWATT11 L4936
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . ADVANCE DAT A STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L4936N L4936NH MULTIWATT11 L4936 PDF

    L4936N

    Abstract: L4936NH MULTIWATT11
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . ADVANCE DAT A STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L4936N L4936NH MULTIWATT11 PDF

    L4936N

    Abstract: MULTIWATT11 st automotive L4936NH
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N MULTIWATT11 st automotive L4936NH PDF

    L4936N

    Abstract: L4936 L4936NH MULTIWATT11
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . ADVANCE DATA STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L4936N L4936 L4936NH MULTIWATT11 PDF

    DRCF124T

    Contextual Info: DRCF124T Tentative Total pages page DRCF124T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NH Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    DRCF124T DRCF124T PDF

    Contextual Info: 267 Lowell Road, Hudson NH 03051 Tel: 603 598-0070 Fax: (603)598-0075 Helping Customers Innovate, Improve & Grow From: Ram Arvikar VP Quality & Corp. Compliance Subject: Applicability of DFARS 252.225-7014, Preference for Domestic Specialty Metals, Alt. I to Vectron’s products


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    2008-O002) PDF