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    onsemi NGTB40N120FL2WG

    IGBT TRENCH FS 1200V 80A TO247
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    NGTB40N120FL2WG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB40N120FL2WG ON Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 80A 535W TO247 Original PDF

    NGTB40N120FL2WG Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    G40N120FL2

    Abstract: No abstract text available
    Text: NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		PDF NGTG40N120FL2WG NGTG40N120FL2W/D G40N120FL2