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    NF SMD MARKING Search Results

    NF SMD MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    NF SMD MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD capacitors CODES

    Abstract: SMD CAPACITORS smd Capacitor marking codes marking SMD CODES C31V j35 SMD Marking Code smd marking codes Marking Codes smd SMD CAPACITOR CODES 6528 capacitor
    Text: SMD Film Capacitors General Technical Information marking of SMD capacitors The nominal capacitance value is given with 3 digits EIA-code, Examples: 103 = 10000 pF = 10 nF = 0.01 µF The capacitance tolerance is expressed with letter codes: M K J ± 20 % ± 10 %


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    smd rf transistor marking

    Abstract: 2SC3357 SMD smd transistor marking RE transistor 2SC3357 10 ghz transistor smd transistor marking GA RE smd 2SC3357 RF TRANSISTOR 10 GHZ low noise marking rh transistor
    Text: IC Transistors SMD Type NPN Silicon RF Transistor 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz


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    PDF 2SC3357 smd rf transistor marking 2SC3357 SMD smd transistor marking RE transistor 2SC3357 10 ghz transistor smd transistor marking GA RE smd 2SC3357 RF TRANSISTOR 10 GHZ low noise marking rh transistor

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    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3357 Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz


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    PDF 2SC3357

    smd marking QY

    Abstract: 2SC4215
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4215 Features Small reverse transfer capacitance: Cre = 0.55 pF typ. Low noise figure: NF = 2dB (typ.) (f = 100 MHz) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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    PDF 2SC4215 100MHz, smd marking QY 2SC4215

    2SC4249

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4249 Features High gain: Gpe = 24dB typ. (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter


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    PDF 2SC4249 2SC4249

    aly smd

    Abstract: transistor smd ALG
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    PDF KTC3875 OT-23 100mA, aly smd transistor smd ALG

    smd marking ly

    Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).


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    PDF 2SC4116 100mA, smd marking ly hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY

    transistor smd ALG

    Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    PDF KTC3875 OT-23 100mA, transistor smd ALG ALY SMD smd transistor marking KTC3875 transistor smd aly 10

    smd marking QY

    Abstract: 2SC2714
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2714 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low noise figure: NF = 2.5dB typ. (f = 100 MHz) 0.55 Small reverse transfer capacitance: Cre = 0.7 pF (typ.) 2 +0.1


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    PDF 2SC2714 OT-23 smd marking QY 2SC2714

    Diodes smd e4

    Abstract: E4 smd SMD e5 smd marking e5 Diodes smd e5 ic e4 SMD E4 sot 2SA1256 smd ic marking e5 E5 SMD
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1256 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small NF 2.5dB typ . 0.55 High fT (230MHz typ), and small Cre (1.1pF typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    PDF 2SA1256 OT-23 230MHz 100MHz Diodes smd e4 E4 smd SMD e5 smd marking e5 Diodes smd e5 ic e4 SMD E4 sot 2SA1256 smd ic marking e5 E5 SMD

    smd transistor SY

    Abstract: 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD
    Text: Transistors SMD Type Silicon PNP Epitaxial Type Transistor 2SA1162 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High voltage and high current: VCEO = -50 V, IC = ?150 mA max 1 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low noise: NF = 1dB (typ.), 10dB (max)


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    PDF 2SA1162 OT-23 Col100 smd transistor SY 2SA1162 SMD smd transistor NF 2SA1162 NF marking TRANSISTOR SMD

    sot-23 Marking Mb

    Abstract: 2SC3098 S21E-2 Marking MB
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF 2SC3098 OT-23 500MHz) 500MHz sot-23 Marking Mb 2SC3098 S21E-2 Marking MB

    200MHZ

    Abstract: 2SC3122
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3122 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise :NF=2.0dB Typ. (f=200MHZ) 0.55 High Gain: Gpe=24dB(Typ.)(f=200MHz) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01


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    PDF 2SC3122 OT-23 200MHZ) 200MHz 200MHZ 2SC3122

    SMD transistor r24

    Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz


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    PDF 2SC4226 OT-23 SMD transistor r24 marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN

    marking mh

    Abstract: 2SC3606
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


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    PDF 2SC3606 OT-23 marking mh 2SC3606

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3


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    PDF 2SC3356 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


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    PDF 2SC3429 OT-23 500MHz) 500MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SC3606 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF 2SC3098 OT-23 500MHz) 500MHz

    smd transistor marking PA

    Abstract: smd transistor marking GA smd marking GA 2SC3663 MARKING Pa TRANSISTOR PA transistor smd
    Text: Transistors IC SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz 0.55 Low-voltage, low-current, low-noise and high-gain


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    PDF 2SC3663 OT-23 smd transistor marking PA smd transistor marking GA smd marking GA 2SC3663 MARKING Pa TRANSISTOR PA transistor smd

    2SC3356 SMD

    Abstract: marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain.


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    PDF 2SC3356 OT-23 2SC3356 SMD marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25

    smd transistor LY

    Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
    Text: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)


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    PDF 2SC2712 OT-23 smd transistor LY lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG

    d2 SMD TRANSISTORs pnp npn

    Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
    Text: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100


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    PDF OT-23 350mW bc858b bc558b bc858c bc558c bc859 bc559 bc859a bc559a d2 SMD TRANSISTORs pnp npn BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ

    SMD Code 12W SOT-23

    Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
    Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED


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    PDF OT-23 350mW CMPT2222A CMPT2369 CMPT24 CMPT2907A CMPT3640 CMPT3646 CMFT3904 CMPT3906 SMD Code 12W SOT-23 CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89