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    NF 936 Search Results

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    NF 936 Price and Stock

    TE Connectivity 1SNF936710R0000

    CBS185-COVER
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    DigiKey 1SNF936710R0000 Bulk 216
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    Mouser Electronics 1SNF936710R0000
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    Newark 1SNF936710R0000 Bulk 216 1
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    RS 1SNF936710R0000 Bulk 18 Weeks 216
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    TTI 1SNF936710R0000 Bulk 240 12
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    TME 1SNF936710R0000 216
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    Avnet Abacus 1SNF936710R0000 216 10 Weeks 12
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    Master Electronics 1SNF936710R0000
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    New Advantage Corporation 1SNF936710R0000 168 1
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    Sager 1SNF936710R0000 216 216
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    Allegro MicroSystems LLC A19360LUBATN-FAE4-A

    Speed Sensors HIGH-RESOLUTION GMR WHEEL SPEED AND DISTANCE SENSOR IC
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    Mouser Electronics A19360LUBATN-FAE4-A
    • 1 $5.2
    • 10 $3.9
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    TE Connectivity RNF-3000-9/3-6-SP

    Heat Shrink Tubing & Sleeves HS-TBG 9/3MM BL PRICE PER METER
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    Mouser Electronics RNF-3000-9/3-6-SP
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    Allegro MicroSystems LLC A19360LUBATN-FAE4-065-A

    Speed Sensors HIGH-RESOLUTION GMR WHEEL SPEED AND DISTANCE SENSOR IC
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    Mouser Electronics A19360LUBATN-FAE4-065-A
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    Glenair Inc 440HS030NF1909-3-63

    Circular MIL Spec Backshells BND/SHRNK BOOT ADPTR RC STRAIGHT
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    Mouser Electronics 440HS030NF1909-3-63
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    Find more NF 936 price and stock on Findchips.com

    NF 936 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FSU01LG

    Abstract: Eudyna Devices
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG Eudyna Devices PDF

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG PDF

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG PDF

    fujitsu GHz gaas fet

    Abstract: fujitsu gaas fet FSU01LG
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG FCSI0598M200 fujitsu GHz gaas fet fujitsu gaas fet PDF

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG PDF

    452 fet

    Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG 12GHz FSU01LG FCSI0598M200 452 fet fujitsu GHz gaas fet fujitsu gaas fet PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X PDF

    FMM5702X

    Abstract: FMM5702
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X Ite05 PDF

    FMM5704X

    Abstract: ZL 264
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X ZL 264 PDF

    FUJITSU MMIC LNA

    Abstract: FUJITSU LNA
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X FCSI05009M200 FUJITSU MMIC LNA FUJITSU LNA PDF

    874 561 0 4V

    Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 874 561 0 4V FMM5702 FUJITSU MMIC LNA PDF

    FMM5702

    Abstract: FMM5702X 34500 544 mmic 2732G NF 936
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702 34500 544 mmic 2732G NF 936 PDF

    874 561 0 4V

    Abstract: FMM5702X FMM5702
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X 874 561 0 4V FMM5702 PDF

    U31-U39

    Abstract: 09005aef8343b5fe MT36JSZF51272PDY-1G1D1
    Text: 4GB x72, ECC, QR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT36JSZF51272PDY – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


    Original     		240-Pin MT36JSZF51272PDY 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef8343b5fe jszf36c512x72pdy U31-U39 MT36JSZF51272PDY-1G1D1 PDF

    cb7 door

    Abstract: HEX22 EVB711XX EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C EVB71111-915-FSK-C HC49 427Mm TH71112
    Text: EVB71111 868/915MHz Receiver Evaluation Board Description Features ˆ ˆ ˆ ˆ ˆ Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current


    Original     		EVB71111 868/915MHz EVB71111-868-FSK-C EVB71111-868-ASK-C EVB71111-915-FSK-C EVB71111-915-ASK-C EVB71111-XXX-YYY-C 915MHz) ISO14001 April/08 cb7 door HEX22 EVB711XX EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C EVB71111-915-FSK-C HC49 427Mm TH71112 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8GB, 16GB x72, ECC, QR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF1G72PDZ – 8GB MT36KSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3L functionality and operations supported as defined in the component data sheet


    Original     		240-Pin MT36KSF1G72PDZ MT36KSF2G72PDZ 240-pin, PC3-10600, PC3-8500, PC3-6400 09005aef8490c71e ksf36c1g 2gx72pdz PDF

    MT36KSF1G72PDZ-1G4

    Abstract: No abstract text available
    Text: 8GB, 16GB x72, ECC, QR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF1G72PDZ – 8GB MT36KSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3L functionality and operations supported as defined in the component data sheet


    Original     		240-Pin MT36KSF1G72PDZ MT36KSF2G72PDZ MO-269 240-pin, PC3-10600, PC3-8500, PC3-6400 09005aef8490c71e MT36KSF1G72PDZ-1G4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8GB, 16GB x72, ECC, QR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF1G72PDZ – 8GB MT36JSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


    Original     		240-Pin MT36JSF1G72PDZ MT36JSF2G72PDZ 240-pin, PC3-10600, PC3-8500, PC3-6400 09005aef84d559ea jsf36c1g 2gx72pdz PDF

    SAFCH915MAL0N00

    Abstract: hc49/smd transistor lf SAFCH SAFCC868 HC49 smd HEX22 SFECF10M7HA00 EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C
    Text: EVB71111 868/915MHz Receiver Evaluation Board Description Features ! ! ! ! ! ! Single-conversion superhet architecture for low external component count FSK for digital data and FM reception for analog signal transmission FSK/FM demodulation with phase-coincidence demodulator


    Original     		EVB71111 868/915MHz EVB71111-868-FSK-C EVB71111-868-ASK-C EVB71111-915-FSK-C EVB71111-915-ASK-C ISO14001 June/07 SAFCH915MAL0N00 hc49/smd transistor lf SAFCH SAFCC868 HC49 smd HEX22 SFECF10M7HA00 EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C PDF

    Untitled

    Abstract: No abstract text available
    Text: EVB71111 868/915MHz Receiver Evaluation Board Description Features ̨ ̨ ̨ ̨ ̨ Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current


    Original     		EVB71111 868/915MHz EVB71111-868-FSK-C EVB71111-868-ASK-C EVB71111-915-FSK-C EVB71111-915-ASK-C EVB71111-XXX-YYY-C 915MHz) ISO14001 April/08 PDF

    TB3-750

    Abstract: philips pm 3209 philips pm 3210 kss 210 1626 power Triode M6955 tb3/750 WJ 3 2xtb
    Text: PHILIPS TEIODE for use as H.P. and L.F. amplifier and oscil­ lator, suitable for grounded grid circuits TEIODE pour utilisation en amplificatrice H.P. et B.F. et oscillatrice, propre aux circuits "grounded-grid" TEIODE zur Verwendung als HP- und NF-Verstärker und


    OCR Scan     		7R50810 TB3/75G TB3-750 philips pm 3209 philips pm 3210 kss 210 1626 power Triode M6955 tb3/750 WJ 3 2xtb PDF

    fujitsu gaas fet

    Abstract: FSU01LG
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package


    OCR Scan     		FSU01LG 190dB 12GHz FSU01LG FCSI0598M200 fujitsu gaas fet PDF

    k 3192

    Abstract: No abstract text available
    Text: ENG No: AE-3192-NA AE-3192-NB DIM "D" 1 1 .43 .450 (16.18) . 637 DIM "C" (1 9.05 ) .750 (23.80) . 937 CCI DIM "A" SIZE (3.96) 2 . 1 56 3 4 5 6 7 8 9 DIM "B" PART No PART No AE-3192-NF AE-3192-NK (32.51 ) 1 . 280 (1 7.47 ) . 688 (39.67 ) 1 - 562 PART No


    OCR Scan     		AE-3192-NA AE-3192-NB AE-3192-NF AE-3192-NK k 3192 PDF