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    NF 936 Search Results

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    NF 936 Price and Stock

    TE Connectivity 1SNF936710R0000

    CBS185-COVER
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    DigiKey 1SNF936710R0000 Bulk 216
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    Avnet Americas 1SNF936710R0000 Bulk 16 Weeks, 3 Days 216
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    Mouser Electronics 1SNF936710R0000
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    Newark 1SNF936710R0000 Bulk 216 1
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    RS 1SNF936710R0000 Bulk 18 Weeks 216
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    TTI 1SNF936710R0000 Bulk 240 12
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    TME 1SNF936710R0000 216
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    Avnet Abacus 1SNF936710R0000 216 10 Weeks 12
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    Master Electronics 1SNF936710R0000
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    New Advantage Corporation 1SNF936710R0000 168 1
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    Sager 1SNF936710R0000 216 216
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    TE Connectivity RNF-3000-9/3-6-SP

    Heat Shrink Tubing & Sleeves HS-TBG 9/3MM BL PRICE PER METER
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    Mouser Electronics RNF-3000-9/3-6-SP
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    Allegro MicroSystems LLC A19360LUBATN-FAE4-065-A

    Speed Sensors HIGH-RESOLUTION GMR WHEEL SPEED AND DISTANCE SENSOR IC
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    Glenair Inc 440HS030NF1909-3-63

    Circular MIL Spec Backshells BND/SHRNK BOOT ADPTR RC STRAIGHT
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    Mouser Electronics 440HS030NF1909-3-63
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    Glenair Inc 440GS031NF1936-4BT

    Circular MIL Spec Backshells BND/SHRNK BOOT ADPTR DC STRT BAND BOOT
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    Mouser Electronics 440GS031NF1936-4BT
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    Find more NF 936 price and stock on Findchips.com

    NF 936 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FSU01LG

    Abstract: Eudyna Devices
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG Eudyna Devices PDF

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG PDF

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG PDF

    fujitsu GHz gaas fet

    Abstract: fujitsu gaas fet FSU01LG
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG FCSI0598M200 fujitsu GHz gaas fet fujitsu gaas fet PDF

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG PDF

    452 fet

    Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG 12GHz FSU01LG FCSI0598M200 452 fet fujitsu GHz gaas fet fujitsu gaas fet PDF

    TB3-750

    Abstract: philips pm 3209 philips pm 3210 kss 210 1626 power Triode M6955 tb3/750 WJ 3 2xtb
    Text: PHILIPS TEIODE for use as H.P. and L.F. amplifier and oscil­ lator, suitable for grounded grid circuits TEIODE pour utilisation en amplificatrice H.P. et B.F. et oscillatrice, propre aux circuits "grounded-grid" TEIODE zur Verwendung als HP- und NF-Verstärker und


    OCR Scan     		7R50810 TB3/75G TB3-750 philips pm 3209 philips pm 3210 kss 210 1626 power Triode M6955 tb3/750 WJ 3 2xtb PDF

    fujitsu gaas fet

    Abstract: FSU01LG
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package


    OCR Scan     		FSU01LG 190dB 12GHz FSU01LG FCSI0598M200 fujitsu gaas fet PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X PDF

    FMM5702X

    Abstract: FMM5702
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X Ite05 PDF

    FMM5704X

    Abstract: ZL 264
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X ZL 264 PDF

    FUJITSU MMIC LNA

    Abstract: FUJITSU LNA
    Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω


    Original     		FMM5704X 36-40GHz FMM5704X FCSI05009M200 FUJITSU MMIC LNA FUJITSU LNA PDF

    874 561 0 4V

    Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X FCSI0599M200 874 561 0 4V FMM5702 FUJITSU MMIC LNA PDF

    874 561 0 4V

    Abstract: FMM5702X FMM5702
    Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for


    Original     		FMM5702X 27-32GHz FMM5702X 874 561 0 4V FMM5702 PDF

    k 3192

    Abstract: No abstract text available
    Text: ENG No: AE-3192-NA AE-3192-NB DIM "D" 1 1 .43 .450 (16.18) . 637 DIM "C" (1 9.05 ) .750 (23.80) . 937 CCI DIM "A" SIZE (3.96) 2 . 1 56 3 4 5 6 7 8 9 DIM "B" PART No PART No AE-3192-NF AE-3192-NK (32.51 ) 1 . 280 (1 7.47 ) . 688 (39.67 ) 1 - 562 PART No


    OCR Scan     		AE-3192-NA AE-3192-NB AE-3192-NF AE-3192-NK k 3192 PDF

    7PSAG-1946D

    Abstract: SFP450 B 7624 diode v474 SFE10 TEA6820T TEA6822T VSO56 MHA256 388bn-1211z
    Text: INTEGRATED CIRCUITS DATA SHEET TEA6822T In Car Entertainment ICE car radio Preliminary specification File under Integrated Circuits, IC01 1995 Nov 22 Philips Semiconductors Preliminary specification In Car Entertainment (ICE) car radio TEA6822T FEATURES


    Original     		TEA6822T SCD45 513061/1100/01/pp48 7PSAG-1946D SFP450 B 7624 diode v474 SFE10 TEA6820T TEA6822T VSO56 MHA256 388bn-1211z PDF

    U31-U39

    Abstract: 09005aef8343b5fe MT36JSZF51272PDY-1G1D1
    Text: 4GB x72, ECC, QR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT36JSZF51272PDY – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


    Original     		240-Pin MT36JSZF51272PDY 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef8343b5fe jszf36c512x72pdy U31-U39 MT36JSZF51272PDY-1G1D1 PDF

    cb7 door

    Abstract: HEX22 EVB711XX EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C EVB71111-915-FSK-C HC49 427Mm TH71112
    Text: EVB71111 868/915MHz Receiver Evaluation Board Description Features ˆ ˆ ˆ ˆ ˆ Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current


    Original     		EVB71111 868/915MHz EVB71111-868-FSK-C EVB71111-868-ASK-C EVB71111-915-FSK-C EVB71111-915-ASK-C EVB71111-XXX-YYY-C 915MHz) ISO14001 April/08 cb7 door HEX22 EVB711XX EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C EVB71111-915-FSK-C HC49 427Mm TH71112 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8GB, 16GB x72, ECC, QR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF1G72PDZ – 8GB MT36KSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3L functionality and operations supported as defined in the component data sheet


    Original     		240-Pin MT36KSF1G72PDZ MT36KSF2G72PDZ 240-pin, PC3-10600, PC3-8500, PC3-6400 09005aef8490c71e ksf36c1g 2gx72pdz PDF

    MT36KSF1G72PDZ-1G4

    Abstract: No abstract text available
    Text: 8GB, 16GB x72, ECC, QR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF1G72PDZ – 8GB MT36KSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3L functionality and operations supported as defined in the component data sheet


    Original     		240-Pin MT36KSF1G72PDZ MT36KSF2G72PDZ MO-269 240-pin, PC3-10600, PC3-8500, PC3-6400 09005aef8490c71e MT36KSF1G72PDZ-1G4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8GB, 16GB x72, ECC, QR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF1G72PDZ – 8GB MT36JSF2G72PDZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C H0) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


    Original     		240-Pin MT36JSF1G72PDZ MT36JSF2G72PDZ 240-pin, PC3-10600, PC3-8500, PC3-6400 09005aef84d559ea jsf36c1g 2gx72pdz PDF

    SAFCH915MAL0N00

    Abstract: hc49/smd transistor lf SAFCH SAFCC868 HC49 smd HEX22 SFECF10M7HA00 EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C
    Text: EVB71111 868/915MHz Receiver Evaluation Board Description Features ! ! ! ! ! ! Single-conversion superhet architecture for low external component count FSK for digital data and FM reception for analog signal transmission FSK/FM demodulation with phase-coincidence demodulator


    Original     		EVB71111 868/915MHz EVB71111-868-FSK-C EVB71111-868-ASK-C EVB71111-915-FSK-C EVB71111-915-ASK-C ISO14001 June/07 SAFCH915MAL0N00 hc49/smd transistor lf SAFCH SAFCC868 HC49 smd HEX22 SFECF10M7HA00 EVB71111 EVB71111-868-ASK-C EVB71111-868-FSK-C PDF

    Untitled

    Abstract: No abstract text available
    Text: EVB71111 868/915MHz Receiver Evaluation Board Description Features ̨ ̨ ̨ ̨ ̨ Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current


    Original     		EVB71111 868/915MHz EVB71111-868-FSK-C EVB71111-868-ASK-C EVB71111-915-FSK-C EVB71111-915-ASK-C EVB71111-XXX-YYY-C 915MHz) ISO14001 April/08 PDF