Untitled
Abstract: No abstract text available
Text: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF
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F-67441
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Untitled
Abstract: No abstract text available
Text: 9 =W S age TNC P H Ro oir / See CONDENSATEURS CHIPS CERAMIQUE MULTICOUCHES MULTILAYER CERAMIC CHIP CAPACITORS Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards E12 E24 E48 E96
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Untitled
Abstract: No abstract text available
Text: CONDENSATEURS CHIPS CERAMIQUE CLASSE 2 CNC Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards
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93133
Abstract: No abstract text available
Text: CONDENSATEURS CHIPS CERAMIQUE CLASSE 2 CNC Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards L T W a L, W, T, pour chips étamé option E, H ou T : + 0,5 mm L, W, T, for tinned chips (option E, H or T) : + 0,5 mm
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93133
Abstract: No abstract text available
Text: =Y lf exPage 9 rU e CeVoir / Se L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards L T W a L, W, T, pour chips étamé option E, H ou T : + 0,5 mm L, W, T, for tinned chips (option E, H or T) : + 0,5 mm
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Untitled
Abstract: No abstract text available
Text: RADIALL Département COAXIAL TECHNICAL DATA TITLE TITRE N .F / L C , F - 101. Rua Philibert Hoffmann Zona Industriali« OuMt 93116 - R06 NY-8OUS-BOIS Téléphona : 864-80-40 NOTICE TECHNIQUE PLAT, R 191.742 NF/LC.FADAPTOR, WITH FLANGE Séria . ADAPTOR NORMALISATION
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nf 742
Abstract: No abstract text available
Text: RADIALL Département COAXIAL TECHNICAL DATA TITLE TITRE N .F / L C , F - 101. Rua Philibert Hoffmann Zona Industriali« OuMt 93116 - R06 NY-8OUS-BOIS Téléphona : 864-80-40 NOTICE TECHNIQUE PLAT, R 191.742 NF/LC.FADAPTOR, WITH FLANGE Séria . ADAPTOR NORMALISATION
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R06NY-8OUS-BOIS
nf 742
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CECC 32100
Abstract: No abstract text available
Text: 9 =W S age P H Ro oir / See CONDENSATEURS CHIPS CERAMIQUE CLASSE 1 CERAMIC CHIP CAPACITORS CLASS 1 Tolérances sur capacité Tolérance on capacitance BASSE TENSION LOW VOLTAGE ± 0,25 pF CU Conformes aux spécifications des normes CECC 32100 et NF C 93133
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maa 0403
Abstract: No abstract text available
Text: CONDENSATEURS CHIPS CERAMIQUE CLASSE 2 CNC BASSE TENSION LOW VOLTAGE Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of
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NF 831
Abstract: No abstract text available
Text: N U lICt Département COAXIAL ItCHNIQUÊ TECHNICAL ZM M 931*6 DATA - TA M phon* T IT L E T IT R E N-F / LC _ f - R 191.741 NF/LC.FADAPTOR, Séria . ^DAPTnrr N O R M A LISA TIO N IE C : _ CECC : _ SPECIFICATIONS M IL CABLES CABLES PROPERTIES
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HSP50415
Abstract: HSP50415EVAL1 HSP50415VI Q100
Text: HSP50415 ADV ANCE I NF O R MA T ION Data Sheet January 2000 Wideband Programmable Modulator WPM File Number 4559.3 Features • Output Sample Rates to 100MSPS The HSP50415 Wideband Programmable Modulator (WPM) is a quadrature amplitude modulator/upconverter designed
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HSP50415
100MSPS
HSP50415
16-bit
HSP50415EVAL1
HSP50415VI
Q100
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CECC 32101
Abstract: 0805 cnc 331 MARKING CODE DE
Text: =Y lf exPage 9 rU e CeVoir / Se CERAMIC CHIP CAPACITORS CLASS 2 BASSE TENSION LOW VOLTAGE Format / Format 0403 0603 Modèle normalisé / Standard model 0402 CNC 19 CNC 19 A L W T max. a Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of
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HFA3963
Abstract: HFA3683A HFA3783 HFA3841 HFA3861A HFA3861AIN HFA3861AIN96 ba part 2 date sheet W5610 "complementary code"
Text: HFA3861A ADV ANCE I NF O R MA T ION Data Sheet November 1999 File Number 4776.1 Direct Sequence Spread Spectrum Baseband Processor Features The Intersil HFA3861A Direct Sequence Spread Spectrum DSSS baseband processor is part of the PRISM 2.4GHz radio chipset, and
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HFA3861A
HFA3861A
HFA3783
HFA3963
HFA3683A
HFA3841
HFA3861AIN
HFA3861AIN96
ba part 2 date sheet
W5610
"complementary code"
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hfa3724 manual
Abstract: "Complementary Code Keying" RSSI energy SDI scrambler HFA3683A HFA3783 HFA3841 HFA3861B HFA3861BIN HFA3861BIN96
Text: HFA3861B ADV ANCE I NF O R MA T ION Data Sheet January 2000 File Number 4816 Direct Sequence Spread Spectrum Baseband Processor Features The Intersil HFA3861B Direct Sequence Spread Spectrum DSSS baseband processor is part of the PRISM 2.4GHz radio chipset, and
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HFA3861B
HFA3861B
HFA3783
hfa3724 manual
"Complementary Code Keying"
RSSI energy
SDI scrambler
HFA3683A
HFA3841
HFA3861BIN
HFA3861BIN96
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TRANSISTOR nf 842
Abstract: D 843 Transistor transistor su 312
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:
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NE856
100mA
UPA801T
UPA801T
UPA801T-T1
24-Hour
TRANSISTOR nf 842
D 843 Transistor
transistor su 312
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21134 015
Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
21134 015
nec K 3570
T 318 TE 2395
marking v67
of ic ST 4051
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LB 1639
Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
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UPA801T
NE856
100mA
UPA801T
24-Hour
LB 1639
transistor Bf 444
transistor 4341
transistor BF 258
transistor BF 236
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TRIPATH TA2020
Abstract: TRIPATH R104 OF potentiometer R101 TA1101B TRIPATH TECHNOLOGY tripath audio amp circuit TA2020 TA2020-02 nf 931
Text: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on FILTER BOARD INSTRUCTIONS FOR USE OF THE FILTER BOARD FOR TRIPATH AMPLIFIERS Technical Information Revised March 2000 Reference: Excerpt from Application Note 4 Copyright 1997-2000 Tripath Technology, Inc. All Rights Reserved
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20kHz
30kHz
10AX34
GBNA002
GBNC001
TRIPATH TA2020
TRIPATH
R104
OF potentiometer R101
TA1101B
TRIPATH TECHNOLOGY
tripath audio amp circuit
TA2020
TA2020-02
nf 931
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AMT-A0168
Abstract: No abstract text available
Text: AMT-A0168 900 MHz to 1000 MHz High Linearity Power Amplifier with LNA 1dB NF Data Sheet Features • • • • • • • • • • 900 MHz to 1000 MHz Frequency Range P1dB > +34 dBm Typical Gain 36 dB Typical Gain Flatness < ± 1 dB Typical ± 2 max
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
Rn/50
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TRANSISTOR nf 842
Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz
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NE856
100mA
UPA801T
UPA801T
UPA801T-T1
TRANSISTOR nf 842
TRANSISTOR c 5578 B
TRANSISTOR c 5578
TRANSISTOR 5578
TRANSISTOR 534
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LB 1639
Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA
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UPA801T
NE856
100mA
UPA801T
LB 1639
BF 830 transistor
UPA801T-T1-A
S21E
UPA801T-T1
OF BJT 547
transistor BF 507
651 lem
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transistor Bf 444
Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA
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UPA801T
NE856
100mA
UPA801T
24-Hour
transistor Bf 444
LB 1639
651 lem
amp 827 578 3 pin
DATASHEET OF BJT 547
transistor bf 422 NPN
S21E
UPA801T-T1
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