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Nexperia BC817DPN,115 Bipolar Transistors - BJT BC817DPN/SOT457/SC-74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BC817DPN,115		60,828			1 $0.25 10 $0.164 100 $0.089 1000 $0.071 10000 $0.053	Buy Now
Nexperia BC817DPNF Bipolar Transistors - BJT BC817DPN/SOT457/SC-74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BC817DPNF		9,506			1 $0.29 10 $0.196 100 $0.099 1000 $0.081 10000 $0.051	Buy Now
Glenair Inc 801-007-16NF21-130PA Circular MIL Spec Connector 11+ start 5 wks AOC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	801-007-16NF21-130PA		1			1 $2574.16 10 $2574.16 100 $2574.16 1000 $2574.16 10000 $2574.16	Buy Now
Glenair Inc 801-007-26NF13-200PA Circular MIL Spec Connector 11+ start 5 wks AOC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	801-007-26NF13-200PA					1 $823.43 10 $452.56 100 $452.56 1000 $452.56 10000 $452.56	Get Quote
Glenair Inc 801-007-16NF17-241PA Circular MIL Spec Connector 26+ start 5 wks AOC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	801-007-16NF17-241PA					1 $1399.44 10 $769.13 100 $769.13 1000 $769.13 10000 $769.13	Get Quote

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NF 817 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NF 817 Abstract: 12v ah battery 12V50AH rechargeable battery DOD 76116 Text: PRODUCT SPECIFICATIONS SHEET M ODEL NUMBER DIMENSIONS G H12500 22 22- NF 12V50AH The GH12500 is a general purpose battery with a standard rate performance and a float life of 3 - 5 years. As with all Prism batteries, all are rechargeable, highly efficient, maintenance free, leak proof,	Original	PDF	H12500 12V50AH GH12500 NF 817 12v ah battery 12V50AH rechargeable battery DOD 76116
952 16 418 Abstract: MODELS 248, 249 ZPUL-21 ZPUL-30P NF 723 Text: PULSE AMPLIFIERS Coaxial INVERTING & NON-INVERTING up to 200 mW, 2.5 KHz to 700 MHz ZPUL Up to 200 mW FREQ. MHz GAIN (dB) MAXIMUM RISE/FALL PULSE POLARITY POWER (dBm) WIDTH* TIME DYNAMIC RANGE VSWR Typ. NF* Intercept dB 3rd order Typ. Typ. Volt Current	Original	PDF	ZPUL-30P ZPUL-21 952 16 418 MODELS 248, 249 ZPUL-21 ZPUL-30P NF 723
full radius profile Abstract: Direct Coupling - Full Radius Profile series 443 Text: 443 443-009 Submersible EMI/RFI Cable Sealing Backshell Band-in-a-Can with Strain-Relief Direct Coupling - Full Radius Profile 443 F N 009 NF 16 12 H K P CONNECTOR DESIGNATORS A-F-H-L-S Polysulfide Omit for none Connector Designator B = Band K = Precoiled Band	Original	PDF
Glenair 447 Abstract: No abstract text available Text: 447 447-425 EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief Rotatable Coupling - Full Radius Profile 447 F N 425 NF 16 12 K P CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING Product Series Polysulfide Omit for none Connector Designator	Original	PDF
20656 Abstract: No abstract text available Text: 443 443-009 Submersible EMI/RFI Cable Sealing Backshell Band-in-a-Can with Strain-Relief Direct Coupling - Full Radius Profile 443 F N 009 NF 16 12 H K P CONNECTOR DESIGNATORS A-F-H-L-S Polysulfide Omit for none Connector Designator B = Band K = Precoiled Band	Original	PDF
full radius profile Abstract: series 447 Text: 447 447-425 EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief Rotatable Coupling - Full Radius Profile 447 F N 425 NF 16 12 K P CONNECTOR DESIGNATORS A-F-H-L-S ROTATABLE COUPLING Product Series Polysulfide Omit for none Connector Designator	Original	PDF
Untitled Abstract: No abstract text available Text: BFP620F Low Noise SiGe:C Bipolar RF Transistor • High gain low noise RF transistor 3 • Based on Infineon's reliable high volume 2 4 1 Silicon Germanium technology • Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NF min = 1.3 dB at 6 GHz	Original	PDF	BFP620F AEC-Q101
Untitled Abstract: No abstract text available Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain \|S 21\|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD	Original	PDF	BGA420 25-Technologie EHA07385
INFINEON marking BGA Abstract: BGA420 t501 Text: BGA420 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain \|S21\|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD	Original	PDF	BGA420 25-Technologie EHA07385 OT343 INFINEON marking BGA BGA420 t501
Untitled Abstract: No abstract text available Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain \|S 21\|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD	Original	PDF	BGA420 25-Technologie EHA07385 OT343
TRANSISTOR D434 Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313 Text: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm	Original	PDF	NE674 NE67400 NE67483B NE67483B] NE67400] TRANSISTOR D434 d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
C10535E Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION	Original	PDF	NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] C10535E NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Tektronix 2212 Abstract: AN231 schematic diagram bluetooth headset TI AN175 BGA728L7 C166 Mifare* capacitor inductor sma M7 diode schematic diagram of FM radio Text: B GA 7 2 8 L 7 Bro a d b a n d L o w No i s e A m p l i fi e r f o r FM R a d i o Ap p l i c a ti o n s u s i n g B GA 7 2 8 L 7 In c l u d i n g a c o n f i g u r a ti o n fo r mi n i mu m NF a n d o n e fo r b e s t i n p u t ma tc h i n g i n a 5 0 Oh m s ys te m	Original	PDF	AN231, BGA728L7 BGA728L7 AN231 Tektronix 2212 AN231 schematic diagram bluetooth headset TI AN175 C166 Mifare* capacitor inductor sma M7 diode schematic diagram of FM radio
XE166 Abstract: XC2000 xc2000 reference manual AP24026 reference design using infineon infineon qfp144 QFP-100 AP16116 Text: Application Note, V1.1, October 2007 AP16116 XC2000 & XE166 Families Design Guidelines for XC2000 & XE166 Microcontroller Board Layout Microcontrollers Edition 2007-10 Published by Infineon Technologies AG 81726 Münich, Germany 2007 Infineon Technologies AG	Original	PDF	AP16116 XC2000 XE166 XE166 QFP-144) QFP-100) XC2000 xc2000 reference manual AP24026 reference design using infineon infineon qfp144 QFP-100 AP16116

55n60 Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948 Text: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE	OCR Scan	PDF	OT-23 BC807W OT-323 BC817W OT-89 55n60 transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
q406 transistor Abstract: nf 820 transistor q406 q406 transistor data Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q	OCR Scan	PDF	Q62702-S638 Q62702-S637 E6288 E6296 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 q406 transistor nf 820 transistor q406 q406 transistor data
NEC 3536 Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •	OCR Scan	PDF	NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536
Untitled Abstract: No abstract text available Text: 2SC5138 Silicon NPN Epitaxial HITACHI ADE-208-225 1st. Edition Application V H F / UHF wide band am plifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 M H z Outline SMPAK	OCR Scan	PDF	2SC5138 ADE-208-225
063 793 Abstract: transistor v63 Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain	OCR Scan	PDF	NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63
NEC K 2500 Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905 Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz	OCR Scan	PDF	NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
817 CN Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz	OCR Scan	PDF	NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN
NEC D 809 F Abstract: NEC D 809 L transistor NEC D 986 E7138 Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm	OCR Scan	PDF	NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138
NEC D 809 F Abstract: NEC D 809 71383B NEC D 809 k Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm	OCR Scan	PDF	NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k
HT 1000-4 power amplifier Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v Text: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V\|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22\|xF 4 k il 1 nF 1 0 0 jlF * V OUT V\|N C - Q1 -O h anyCAP LDO TOPOLOGY - \| - C COMP N O N IN V E R T IN G W ID E B A N D	OCR Scan	PDF	ADP3050-5 ADP3603/4/5 ADMC300 ADMC330 ADMC331 HT 1000-4 power amplifier mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v

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NF 817 Search Results

NF 817 Price and Stock

Nexperia BC817DPN,115

Nexperia BC817DPNF

Glenair Inc 801-007-16NF21-130PA

Glenair Inc 801-007-26NF13-200PA

Glenair Inc 801-007-16NF17-241PA

NF 817 Datasheets Context Search

NF 817

952 16 418

full radius profile

Glenair 447

20656

full radius profile

Untitled

Untitled

INFINEON marking BGA

Untitled

TRANSISTOR D434

C10535E

Tektronix 2212

XE166

55n60

q406 transistor

NEC 3536

Untitled

063 793

NEC K 2500

817 CN

NEC D 809 F

NEC D 809 F

HT 1000-4 power amplifier