Untitled
Abstract: No abstract text available
Text: 2SC5490A Ordering number : ENA1091A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5490A UHF to S-Band Low-Noise Amplifier Applications Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)
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2SC5490A
ENA1091A
A1091-7/7
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a1091 transistor
Abstract: No abstract text available
Text: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ
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ENA1091A
2SC5490A
A1091-7/7
a1091 transistor
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BAT151
Abstract: No abstract text available
Text: BAT15-110D SILICON LOW BARRIER SCHOTTKY DIODE DESCRIPTION: The ASI BAT15-110D is a silicon low barrier Schottky diode, Designed for use in Doublers and Modulators. PACKAGE STYLE 711 FEATURES INCLUDE: • Low RS • Low NF MAXIMUM RATINGS VR 4.0 V IF 50 mA
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BAT15-110D
BAT15-110D
BAT151
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Hitachi DSA002783
Abstract: No abstract text available
Text: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)
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3SK321
ADE-208-711B
OT-143
D-85622
Hitachi DSA002783
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3SK321
Abstract: marking 4r Hitachi DSA00240
Text: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)
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3SK321
ADE-208-711A
OT-143
3SK321
marking 4r
Hitachi DSA00240
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sot143 marking code G2
Abstract: Hitachi DSA001652
Text: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)
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3SK321
ADE-208-711A
OT-143
sot143 marking code G2
Hitachi DSA001652
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Untitled
Abstract: No abstract text available
Text: 2SC5536A Ordering number : ENA1092A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5536A VHF Low-Noise Amplifier, OSC Applications Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz)
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2SC5536A
ENA1092A
150MHz)
A1092-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1092A 2SC5536A RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP http://onsemi.com Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz) Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)
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ENA1092A
2SC5536A
150MHz)
A1092-7/7
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Untitled
Abstract: No abstract text available
Text: 2SC5488A Ordering number : ENA1089A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5488A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)
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2SC5488A
ENA1089A
A1089-7/7
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FMM5702X
Abstract: FMM5702
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
FMM5702
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874 561 0 4V
Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
874 561 0 4V
FMM5702
FUJITSU MMIC LNA
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FMM5702
Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
FCSI0599M200
FMM5702
34500
544 mmic
2732G
NF 936
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874 561 0 4V
Abstract: FMM5702X FMM5702
Text: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for
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FMM5702X
27-32GHz
FMM5702X
874 561 0 4V
FMM5702
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A1089
Abstract: No abstract text available
Text: Ordering number : ENA1089A 2SC5488A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features • • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)
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ENA1089A
2SC5488A
S21e2
A1089-7/7
A1089
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Untitled
Abstract: No abstract text available
Text: RECEIVED MAY 61991 DOCUMENTS CONTROL R E\¿¿IO N ¿ DESCRIPTION LETTER NO NOTES: 1. DISSIPATION FACTOR: .005 MAX @ 25* C, 1 KHZ. 2. CAPACITANCE: .9 NF-1.1 NF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 20 KV WORKING, 24 KV PRO CESS FOR 2 HOURS O 100* C AND 28 KV PROOF FOR 5 SECS.
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103A203A000
7W970
20000WVDC
QQW343)
01-1C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC5263
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2SC5263
Abstract: No abstract text available
Text: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC5263
2SC5263
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KSK30
Abstract: 100K0 20H2
Text: SAMSUNG SEMICONDUCTOR INC^ KSK30 IME D §711^142 □OGb'HB | *P* SILICON N-CHANNEL JUNCJION FET LOW NOISE PRE-AMP. USE High Input Impedance: l,„= 1nA MAX Low Noise: NF=0.5dB (TYP) High Voltage: Vga, = -5 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic
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KSK30
100pA
Gate100
T-29-25
100K0
20H2
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900mhz frequency generator
Abstract: BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier
Text: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for
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NE5200/SA5200
1200MHz
NE/SA5200
95fiA
900MHzut
711005b
10MHz
-26dBm,
900mhz frequency generator
BV 9y transistor
VHF Transceiver IC
NE5200D
rf transmitter receiver 900Mhz
A5200
NE5200
SA5200D
RF Radio frequency IC, 8pin
900M Wideband Amplifier
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ATF-35176
Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5
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ATF-10100
ATF-13100
ATF-21100
ATF-25100
ATF-10170
ATF-13170
ATF-21170
ATF-25170
ATF-10136
ATF-10236
ATF-35176
ATF-3507
ATF-35076
ATF-44100
ATF26550
ATF-13036
ATF-35576
ATF-35376
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order th is docum ent by MHW8272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-C hannel 860 MHz CATV Line Extender A m plifier • Specified for 128-Channel Performance • Broadband Power Gain — Gp = 27 dB (Typ) • Broadband Noise Figure NF = 6 dB (Typ) @ 860 MHz
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MHW8272/D
128-C
128-Channel
2PHX34752Q--0
2032A
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I12C
Abstract: KSC2758 samsung tuner
Text: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D | T 'lb M m a OOObTSS fl | NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage
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71b4ma
KSC2758
T-31-15
OT-23
600MH
400MHz
I12C
samsung tuner
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
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NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
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