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    NEM2015B20 Search Results

    NEM2015B20 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NEM2015B-20 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    NEM2015B20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NEM2015B20 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)4.5 Absolute Max. Power Diss. (W)39 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF NEM2015B20

    NE1010E

    Abstract: NEM4203 nel130681 NEL132081-12 NE1010E-20 NEL1320 NEM2003B NE4203 NEL130681-12 NEM054029-28
    Text: LT . N E C / - - CALIFORNIA 15E D • L4S7414 0001515 2 ■ 7^33-Oj Additional Power Silicon Bipolar Products t - 3 J - qi ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS hFE PACKAGE CODE VCBO VCE V Ic (A) Pt (V) (C/W) <W) (V) Ic« (mA) TYP NEL130681-12


    OCR Scan     		PDF b4S7414 T-3J-01 NEL130681-12 NEL132081-12 NEM054029-28 NEM056029-28 NEM050C29-28 NE1005E-20 NE1010E-20 NEM1706B-20 NE1010E NEM4203 nel130681 NEL1320 NEM2003B NE4203

    NE4203B-20

    Abstract: NE3005B-20 NTM2222A NTM3904 ntm3906 M181H M194H NE3001B-20 NE3003B-20 NE4201B-20
    Text: - 316 - W ckÏÏtë m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE3005B—20 NE4201B-2Û NE4203B-20 NE64700 NE64800 NEL2301 NEL2302 NEL2303 NEM1706B—20 NEM1712B-20


    OCR Scan     		PDF H82A4A PU1619 PU1620 PU3210 PU3110 PU3211 PU3111 PU3212 PU3112 PU3213 NE4203B-20 NE3005B-20 NTM2222A NTM3904 ntm3906 M181H M194H NE3001B-20 NE3003B-20 NE4201B-20

    NE3005B-20

    Abstract: M194H NE3005B20 NEM2010B-20 NEM2310B-20 15NO3 HQ2A4A M181H NE3001B-20 NE4201B-20
    Text: - 316 - m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q ft n Bn a Bn Bn sn Bn sn un sn a n Bn Bn NE3005B—20 am a B is fö T 8T F Hm a* BB NE4201B-2Û U M HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE4203B-20


    OCR Scan     		PDF H82A4A 32dBm 27dBm NEL2302 34dBm 30dBm NEL2303 38dBm 65GHz NE3005B-20 M194H NE3005B20 NEM2010B-20 NEM2310B-20 15NO3 HQ2A4A M181H NE3001B-20 NE4201B-20

    NE99532

    Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
    Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­


    OCR Scan     		PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563

    NEL230397

    Abstract: NEL132081-12 NEL230297 NEL130681-12 NEL151081-12 NEL230153 NEL230220 NEL150181-12 NEL150481 NEL230257
    Text: NEC/ CALIFORNIA 47E » • fc.M2?m4 0DG52Sb «NECC MICROWAVE DEVICES PART NUMBER PACKAGE STYLE FREQUENCY RANGE GHz SUPPLY VOLT. (V) CLASS OF OPER. TYP. TYP. Pout Pout (dBm) (W) TYP. GAIN (dB) TYP. EFFICIENCY (%) TEST INTERNAL FREQUENCY MATCHING (GHz) IN/OUT


    OCR Scan     		PDF NEL151081-12 NEL150481-12 NEL150181-12 NEL132081-12 NEL130681-12 0305B-20 NEM2708B-20 NEM2705B-20 NEM2703B-20 NEM2701B-20 NEL230397 NEL230297 NEL230153 NEL230220 NEL150481 NEL230257