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    NELCO* MAX VOLTAGE Search Results

    NELCO* MAX VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    NELCO* MAX VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Nelco 4000-13

    Abstract: Nelco 4000-6
    Text: PCB Dielectric Material Selection and Fiber Weave Effect on High-Speed Channel Routing AN-528-1.1 Application Note As data rates increase, designers are increasingly moving away from wide parallel buses to serial buses with differential signaling. Differential signaling uses two output


    Original     		PDF AN-528-1 Nelco 4000-13 Nelco 4000-6

    Untitled

    Abstract: No abstract text available
    Text: AH101 Medium Power, High Linearity Amplifier Applications •   Mobile Infrastructure CATV / DBS Defense / Homeland Security AH 10 1 SOT-89 Package Product Features         Functional Block Diagram GND 50 – 1500 MHz +47 dBm Output IP3


    Original     		PDF AH101 OT-89 AH101

    Thermonics T-2500

    Abstract: T2500E T-2500E picosecond thermostream T2500 1E12 TN1084 2500E signal path designer 105
    Text: LatticeSC High-Speed Backplane Measurements June 2006 Technical Note TN1118 Introduction The LatticeSC device contains multiple SerDes blocks arranged as quads. Each SerDes SERializer/DESerializer provides a serial high speed backplane transceiver interface and is capable of 3.8 GB/s performance.


    Original     		PDF TN1118 10GEC TN1033 Thermonics T-2500 T2500E T-2500E picosecond thermostream T2500 1E12 TN1084 2500E signal path designer 105

    N4000-13

    Abstract: AH101-G Nelco 4000-13 AH101-PCB ah101
    Text: AH101 Medium Power, High Linearity Amplifier Applications •   Mobile Infrastructure CATV / DBS Defense / Homeland Security AH 10 1 SOT-89 Package Product Features         Functional Block Diagram GND 50 – 1500 MHz +47 dBm Output IP3


    Original     		PDF AH101 OT-89 AH101 N4000-13 AH101-G Nelco 4000-13 AH101-PCB

    AH101-G

    Abstract: Nelco 4000-13
    Text: AH101-G Medium Power, High Linearity Amplifier Applications • Mobile Infrastructure • CATV / DBS • Defense / Homeland Security 1 10 AH SOT-89 Package Product Features • • • • • • • • Functional Block Diagram 50 – 1500 MHz +47 dBm Output IP3


    Original     		PDF AH101-G OT-89 AH101-G Nelco 4000-13

    Thermonics T-2500

    Abstract: thermostream EYE DIAGRAM thermonics HPE3630A ORSO42G5 ORSO82G5 ORT42G5 ORT82G5 10GEC
    Text: ORTx2G5, ORSOx2G5 and ORSPI4 High-Speed Backplane Measurements July 2004 Technical Note TN1027 Introduction The Lattice ORT82G5 and ORSO82G5 FPSC devices contain two Quad-SERDES blocks. The Lattice ORT42G5, ORSO42G5 and ORSPI4 FPSC devices contain one Quad-SERDES block. Each SERDES SERializer/DESerializer provides a serial high-speed backplane transceiver interface, operational at data rates up to 3.7 Gbit/s for the


    Original     		PDF TN1027 ORT82G5 ORSO82G5 ORT42G5, ORSO42G5 10GEC TN1032 TN1033 Thermonics T-2500 thermostream EYE DIAGRAM thermonics HPE3630A ORT42G5 10GEC

    TP04100A-1

    Abstract: HPE3610A thermostream ps224 TP0410 HPE3630A Bit-Error HP6213A HPE3648A ORT42G5
    Text: ORT42G5 and ORT82G5 High-Speed Backplane Measurements April 2003 Technical Note TN1027 Introduction The Lattice ORT82G5 FPSC device contains two Quad-SERDES blocks. The Lattice ORT42G5 FPSC device contains one Quad-SERDES block. Each SERDES SERializer/DESerializer provides a serial high-speed backplane


    Original     		PDF ORT42G5 ORT82G5 TN1027 10GEC TN1032 TP04100A-1 HPE3610A thermostream ps224 TP0410 HPE3630A Bit-Error HP6213A HPE3648A

    Untitled

    Abstract: No abstract text available
    Text: TQM879028 0.7−4.0 GHz ½ W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  Repeaters  LTE / WCDMA / CDMA 24 Pin 4x4 mm Leadless SMT Package Product Features General Description NC DSA Out NC NC Amp2 In NC 24 23 22


    Original     		PDF TQM879028

    Untitled

    Abstract: No abstract text available
    Text: TQM8M9076 0.05-4 GHz Digital Variable Gain Amplifier Applications • • • • Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio General Purpose Wireless 32-pin 5x5mm leadless package Product Features • • • • • • • • •


    Original     		PDF TQM8M9076 32-pin TQM8M9076

    0603CS-47NXJLW

    Abstract: TQM8M9077 JESD22-A114 N4000-13
    Text: TQM8M9077 0.05-4 GHz Digital Variable Gain Amplifier Applications •    2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE IF and RF Applications General Purpose Wireless 32-pin 5x5mm leadless package Product Features    


    Original     		PDF TQM8M9077 32-pin TQM8M9077 0603CS-47NXJLW JESD22-A114 N4000-13

    2100 106

    Abstract: nelco
    Text: AH11 High Dynamic Range Dual Amplifier Applications • Mobile Infrastructure  Defense / Homeland Security  Fixed Wireless SOIC-8 package Product Features Functional Block Diagram  150 – 3000 MHz  +44 dBm OIP3 1900 MHz, balanced circuit  Single-ended performance:


    Original     		PDF

    TQM8M9075

    Abstract: No abstract text available
    Text: TQM8M9075 0.05-4 GHz Digital Variable Gain Amplifier Applications • • • • Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio General Purpose Wireless 32-pin 5x5mm leadless SMT package Product Features • • • • • • • •


    Original     		PDF TQM8M9075 32-pin TQM8M9075

    N4000-13

    Abstract: Nelco 4000-13
    Text: TQM8M9076 0.05-4 GHz Digital Variable Gain Amplifier Applications 32-pin 5x5mm leadless SMT package The TQM8M9076 integrates a high performance digital step attenuator followed by a high linearity, broadband gain block. The input and output of the individual stages are


    Original     		PDF TQM8M9076 32-pin N4000-13 Nelco 4000-13

    TQM8M9074

    Abstract: Z11 Marking Code
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


    Original     		PDF TQM8M9074 20-pin TQM8M9074 Z11 Marking Code

    Untitled

    Abstract: No abstract text available
    Text: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking


    Original     		PDF TQM879026

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F654 The RF Line NPN Silicon RF P o w er TVansistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF MRF654

    J476

    Abstract: capacitor j476 NALCO
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package


    OCR Scan     		PDF MRF2628 J476 capacitor j476 NALCO

    MRF654

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF654 The R F Line 15 W 470 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r app licatio n s in in d u stria l and co m m ercia l FM e q u ip m e n t ope ra tin g to 512 MHz.


    OCR Scan     		PDF MRF654 MRF654

    MRF654

    Abstract: nelco
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Transistor . . . designed for 12.5 Volt U H F large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF RF654 MRF654 nelco

    nelco

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistors MRF891 MRF891S . . . designed for 24 volt UHF large-signal, common-emitter amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 0-9 60 MHz.


    OCR Scan     		PDF --j14 MRF891 RF891S nelco

    transistor rf m 2528

    Abstract: M 2530 motorola motorola M 2530 UHF POWER TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		PDF MRF654 transistor rf m 2528 M 2530 motorola motorola M 2530 UHF POWER TRANSISTOR

    SAS660

    Abstract: MRF892
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MRF892 The RF Line 14 W 900 MHz RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . d e s ig n e d for 2 4 volt U H F la r g e -sig n a l, c o m m o n - b a s e a m p lifie r a p p lic a t io n s in in d u stria l a n d c o m m e rc ia l F M e q u ip m e n t o p e ra tin g


    OCR Scan     		PDF MRF892 SAS660 MRF892

    MRF264

    Abstract: MRF260 MRF262 MRF261
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W 136-175 MHz N P N S IL IC O N RF POW ER T R A N S IS T O R RF POWER TR A N SISTO R . . d esig n ed fo r 12.5 -volt V H F Ia rg e -s ig n a lp o w e ra m p lifie rapplica­ tio ns in com m ercial and ind u stria l FM equipm ent.


    OCR Scan     		PDF O-220AB RF260 MRF261 MRF262 MRF264 MRF264 MRF260

    j580

    Abstract: DV2820
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed prim arily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. • Low C rss — 4.5 pF @ V p s = 28 V


    OCR Scan     		PDF MRF166C MRF136, DV2820, BLF244, SD1902, ST1001 j580 DV2820