NEC SEMICONDUCTOR LAND PATTERN DIMENSIONS Search Results

D2029

Abstract: pick and place robot NEC semiconductor land pattern dimensions nec 258 PA2350B
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

pa2450b

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and

U6000

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2450C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2450C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2450C features a low on-state resistance and excellent

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2451B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2451B features a low on-state resistance and

PA2451CTL-E1-A

Abstract: PA2451CTL
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2451C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent

pa245

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA2451C

Abstract: hwson 6pin PA2451CTL-E1-A PA2451CTL
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2451C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MARKING T6C

Abstract: lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin
Contextual Info: Technical Note PACKAGES LINE-UP FOR RF AND MICROWAVE DEVICES Document No. PX10051EJ35V0TN 35th edition Date Published March 2010 NS NEC Electronics Corporation 2001, 2010 Printed in Japan • The information in this document is current as of March, 2010. The information is subject to change

116-Pin

Abstract: PBGA 256 reflow profile semiconductor cross index Lead Free reflow soldering profile BGA reflow soldering profile BGA 224-pin plastic ball grid array 0.8mm JIS-Z0202 tray qfp 14x14 1.4 tray bga 10x10 pcb warpage after reflow
Contextual Info: small! What is a CSP Chip Size Package ? A “CSP” is an integrated circuit package with dimensions equal to or slightly larger than those of the silicon chip it contains. Specifically, a package with size (L x W) equal to the size of the chip is called a Real Chip Size

NEC 2561A

Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
Contextual Info: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

NEC semiconductor land pattern dimensions

Abstract: renesas 64 QFP
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ldmos nec

Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

marking code SMD Transistor 2ak

Abstract: smd code marking NEC g TRANSISTOR SMD MARKING CODE 3401 transistor 5dx smd fairy liquid marking code AE SMD Transistor UPD65013 1.6/SmD TRANSISTOR av Ultrasonic humidifier circuit koki solder paste
Contextual Info: Information SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL Document No. C10535EJ9V0IF00 9th edition Date Published December 1997 N Printed in Japan 1989 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written

GE4F

Abstract: UPD65013 74022a SMD BGA 672 DRAWING ULF-210R TRANSISTOR SMD MARKING CODE 352 UPD7514 UPC451G2 smd TRANSISTOR code YW UPD74HC00
Contextual Info: Information SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL Document No. C10535EJ9V0IF00 9th edition Date Published December 1997 N Printed in Japan 1989 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written