c1677C
Abstract: P12152E C1677 C10535E PC1677C TRANSISTOR 1616 ac
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1677C 5 V-BIAS, +19.5 dBm OUTPUT, 1.8 GHz WIDE BAND SiMMIC AMPLIFIER DESCRIPTION The µPC1677C is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
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PC1677C
PC1677C
c1677C
P12152E
C1677
C10535E
TRANSISTOR 1616 ac
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nec 2571
Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .
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2SC4957
2SC4957-T1
4957-T2
2SC4957)
nec 2571
NEC D 553 C
nec 2571 4 pin
NEC IC D 553 C
3771 nec
nec 716
nec 1565
transistor marking T83 ghz
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NEC D 553 C
Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.
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2SC4957
2SC4957-T1
2SC4957-T2
Ple-107
NEC D 553 C
TRANSISTOR MAC 223
NEC IC D 553 C
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NEC TV MODULE
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NDL5551P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 4*50 /vm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5551P Series are InGaAs avalanche photo diode modules with multimode fiber. detectors of long wavelength transmission systems and cover the wavelength range between
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NDL5551P
GI-50/125)
NDL5551P1
NDL5551P2
NDL55S1P
NEC TV MODULE
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transistor AFR 16
Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
Text: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE
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Cycleg50
transistor AFR 16
BAIL4M
transistor afr 22
bn1l4m
ba1l4m
T108
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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NEC Ga FET marking L
Abstract: U/25/20/TN26/15/850/NE32984D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE32984D
NE32984D
NE32984D-SL
NE32984Dr
NEC Ga FET marking L
U/25/20/TN26/15/850/NE32984D
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BN1F4M
Abstract: No abstract text available
Text: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR BN1F4M The B N 1F4M is designed for use in medium speed switching PACKAG E D IM E N S IO N S circuit. FEATURE in m illim ete rs inches 4 .2 MAX. (0.1 6 5 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.
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3692 nec
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
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NE4210M01
NE4210M01
200/im
NE4210M01-T1
3692 nec
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Transistor NEC K 3654
Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS
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NE32984D
NE32984D
NE32984D-T1A
NE32984D-SL
NE32984D-T1
Transistor NEC K 3654
NEC Ga FET marking L
NEC 2505
NEC k 3654
NEC Ga FET marking A
KA transistor 26 to 40 GHZ
NEC 1093
nec gaas fet marking
low noise, hetero junction fet
NEC Ga FET marking V
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HT - 0886
Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2
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PWS10
CycleS50
HT - 0886
HT 0886
g3je
ht 9366
MARKING LE50
T108
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AI820
Abstract: 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A
Text: SEC i ï f / \ Y r 7 •J- ^ . C /-a - ê - h =7 V C o m p o u n d T ra n s is to r AA1 F4M ÎfiÎÆ F *3Ü cN P N xt°^41'> 7 '^ i f é ^ ,J 4# Y:7 > i > 7 . 9 i . mm, i t R i = 22 k Q , R 2= 22 k Q o AN1F4M t =t > ~7° 'J / > ? ij Ttë t l i t c
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SC-43B
Cycled50
AI820
5886a
ah506
AA1F4M
l0422
PA33
T108
332I
transistor et 454
TC-5886A
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Triac t460
Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Text: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •
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O-220AB'
oTO-220AB
Triac t460
JE 33
H112
T210
T460
X108
triac BT 0266
8P2SM
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2SJ356
Abstract: NEC 2Sj356 TC-8009
Text: = t-5 > • 5 / - h NEC ^ MOS W M tt* h 7 > v ^ ^ MOS Field Effect Transistor 2SJ356 r M OS FET 3â{i 2SJ356t ¿P31 - ^ U » M O S FETT' , 5 V t S ^ I C O t t i t iC ¿ i ¡ S : mm i g i l l i X < -y ? > Î ' I f î î o Ÿ Sp p l â ' t ' > f i i / L ^ ' f g ; <
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2SJ356
2SJ356ttP51
iei-620)
10CMCOCDCM
tl010lONS
101010CM10T-10
ttl00
2SJ356
NEC 2Sj356
TC-8009
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NEC FIP Vacuum display
Abstract: NEC Vacuum Fluorescent Display fip VFD NEC FIP display
Text: DATA SHEET MOS INTEGRATED CIRCUIT //P D 1 6 3 1 2 1/4- to 1/11-DUTY FIP VFD CONTROLLER/DRIVER The /¿PD16312 is a FIP (fluorescent Indicator Panel, or Vacuum Fluorescent Display) controller/driver that Is driven on a 1/4- to 1/11 duty factor. It consists of 11 segm ent output lines, 6 grid output lines, 5 segment/grid output
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1/11-DUTY
PD16312
16-segm
16-segment
NEC FIP Vacuum display
NEC Vacuum Fluorescent Display fip
VFD NEC FIP display
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET CM O S INTEGRATED CIRCUIT JE C / MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM: ¿iPD4217405 are assembled.
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MC-428000F32
32-BIT
MC-428000F32
iPD4217405
427S2S
00blb27
M72B-60AES
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uD16312
Abstract: 6312 vfd IC-3307 NEC Vacuum Fluorescent Display
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT //P D 1 6 3 1 2 1/4- to 1/11-DUTY FIP VFD CONTROLLER/DRIVER The //PD16312 is a FIP (fluorescent Indicator Panel, or Vacuum Fluorescent Display) controller/driver that is driven on a 1/4- to 1/11 duty factor. It consists of 11 segment output lines, 6 grid output lines, 5 segment/grid output
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1/11-DUTY
uPD16312
//PD16312
16-segment
uD16312
6312 vfd
IC-3307
NEC Vacuum Fluorescent Display
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. //PD411001 1 ,0 4 8 ,5 7 6 X 1-BIT DYNAMIC NMOS RAM PRELIMINARY INFORMATION Description Pin Configurations The/¿PD411001 is a nibble mode version 1,048,576word by 1-bit dynam ic N-channel MOS random access memory RAM . It is designed to operate from a single
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uPD411001
576word
/nPD411001
3-001659A
//PD411001
HPD411001
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6008A
Abstract: B0952 nec 1251 T108 H052
Text: Com pound T r a n s is t o r FN1A4P * £ Î/ lF * 3 1 P N P I t & • = !> V = 7 > i > ^ m ^ - f ï • mm) 0 ' < j T ?,}& }?[£ fàiië 1 1 È 1 0 ( R, = 10 kQ, R 2= 47 kQ) 2 .8 ± 0 .2 0 .6 5 Î";!: 1.5 O F A 1 A 4 P t =J > v ” IJ / > ? u Tê t t G
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PWS10
CycleS50
6008A
B0952
nec 1251
T108
H052
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UPC1653
Abstract: UPC1653A UPC1653P UPC1654 1653A DB1316
Text: NEC 1.0 G Hz BANDWIDTH SILIC O N M M IC AMPLIFIER UPC1653A UPC1653P FEATU RES N O IS E F IG U R E A N D P O W E R G AIN • BROAD FREQUENCY R E SP O N SE 1300 M H z T Y P a! 3 dB Down so • INPUT AND OUTPUT MATCHED TO 50 Q 25 • AVAILABLE IN CHIP OR HERMETIC PACKAG E
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UPC1653A
UPC1653P
UPC1653
UPC1654.
20prn
UPC1653P
UPC1654
1653A
DB1316
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O552
Abstract: T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3
Text: i. I «\ / v r * l?N I i ï T ÎK r NEC C o m p o u n d T ran sis to r GN1L3N ffif/L r t i e p n p :n t f * * y□v ^ v i* * :? n Sfc U v ^ to R i = 4 .7 k fì, R 2= 10 k£2 o G A 1 L 3 N t 3 > y }) / > ? i) X " itm X"ê i i ~ (Ta = 25 °C) H g 9 n u ?
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CyclesS50
O552
T108
asti 3773
GA1L3N
la 5531
L092
GN1L3N
mol3
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xeh 250 120
Abstract: T108 TC-6056 UUJK
Text: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E
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PWS10
xeh 250 120
T108
TC-6056
UUJK
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2sc5194-t1
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz
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2SC5194
2SC5194-T2
2sc5194-t1
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SD113
Abstract: SD116 d11510 50117 SD117 SD115 042646 SD111 1866 sd1173
Text: S 1 D 1 3 , S 1 D R 1 5 . S i S o f f ia SD 1 1 6 , 1 6 D 1 1 7 , S f it NEC Corporation 1988 : mm SD 1 1 7 vi^DHD (D o u b le H e a tsin k 7 ^ 'y — 1 K m SD 1 1 3 , SD 1 1 5 , D D io d e) ÿ 0.5 t f ¿ , -, sxnt £ & ^ è U "? T M & t ^ , f ^ i i i D H D f l l & i C j :
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SD113
SD115
SD116
SD117
sd113,
sd115,
sd116,
d11510
50117
SD117
042646
SD111
1866
sd1173
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