NE3515S02
Abstract: NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
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NE3515S02
NE3515S02-T1C
NE3515S02-T1C-A
NE3515S02-T1D
NE3515S02-T1D-A
NE3515S02
NE3515S02-T1C-A
NE3515S02-T1D-A
HS350
NE3515S02-T1C
lnb ku-band
GaAs S2p NE3515S02
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ne3511s02 s2p
Abstract: NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3511S02
NE3511S02-T1C
NE3511S02-T1C-A
NE3511S02-T1D
NE3511S02-T1D-A
ne3511s02 s2p
NE3511S02-A
NE3511S02
HS350
NE3511S02-T1C
NE3511S02-T1C-A
NE3511S02-T1D
lnb ku-band
nec microwave
NE35
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NE3510M04-A
Abstract: NE3510M04 HS350 NE3510M04-T2 NE3510M04-T2-A
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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NE3510M04
NE3510M0
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-A
NE3510M04
HS350
NE3510M04-T2
NE3510M04-T2-A
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EN60747-5-2
Abstract: M601 PS2702-1 PS2702-1-F3 PS2702-1-F4 PS2702-1-V VDE0884 ps2702 ps2702-1-f3-a
Text: PHOTOCOUPLER PS2702-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.
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PS2702-1
PS2702-1
PS2702-1-F3,
E72422
8219/8anty
EN60747-5-2
M601
PS2702-1-F3
PS2702-1-F4
PS2702-1-V
VDE0884
ps2702
ps2702-1-f3-a
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PS2506-4
Abstract: ps2506-4-a PS2506L-1-E3 PS2506L-2 PS2506L-2-E3 PS2506L-4 PS2506-1 PS2506-2 PS2506L-1 PS2506-2-A
Text: PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
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PS2506-1
PS2506L-1
PS2506-1,
PS2506L-1,
PS2506L-1-E3,
PS2506L-2-E3,
PS2506-4
ps2506-4-a
PS2506L-1-E3
PS2506L-2
PS2506L-2-E3
PS2506L-4
PS2506-2
PS2506-2-A
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NEC 2561
Abstract: 2561 nec nec PS2561 nec 2561 datasheet NEC 2561 transistor nec 2561 equivalent nec pc 2561 2561 photocoupler photocoupler 2561 NEC 2561 de
Text: PHOTOCOUPLER PS2561-1,PS2561L-1,PS2561L1-1,PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2561-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
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PS2561-1
PS2561L-1
PS2561L1-1
PS2561L2-1
PS2561L2-1
NEC 2561
2561 nec
nec PS2561
nec 2561 datasheet
NEC 2561 transistor
nec 2561 equivalent
nec pc 2561
2561 photocoupler
photocoupler 2561
NEC 2561 de
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NEC 2562
Abstract: PS2562-1-A EN60747-5-2 PS2562-1 PS2562L-1 PS2562L1-1 PS2562L-1-E3 PS2562L2-1 PS2562L2-1-E3 VDE0884
Text: PHOTOCOUPLER PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2562-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington
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PS2562-1
PS2562L-1
PS2562L1-1
PS2562L2-1
PS2562L2-1
NEC 2562
PS2562-1-A
EN60747-5-2
PS2562L-1-E3
PS2562L2-1-E3
VDE0884
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BS415
Abstract: BS7002 PS2653 PS2653L2 PS2654 PS2654L2 PS2654L4
Text: DATA SHEET POTOCOUPLERS PS2653, PS2654, PS2653L2, PS2654L4 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN PHOTOCOUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected photo-transistor in a plastic DIP Dual In-line Package .
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PS2653,
PS2654,
PS2653L2,
PS2654L4
PS2654
PS2653
PS2654L2
BS415
BS7002
PS2653L2
PS2654L4
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NE55410GR-T3-AZ
Abstract: TL15 NE55410GR NE55410 ldmos nec
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
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NE55410GR
NE55410GR
NE55410GR-T3-AZ
TL15
NE55410
ldmos nec
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transistor
Abstract: UPA810T-A UPA810T-T1-A NE856 S21E UPA810T UPA810T-T1
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:
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UPA810T
NE856
UPA810T
transistor
UPA810T-A
UPA810T-T1-A
S21E
UPA810T-T1
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UPA810T-T1-A
Abstract: NE856 S21E UPA810T UPA810T-A UPA810T-T1 ultra low noise NPN transistor
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:
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UPA810T
NE856
UPA810T
UPA810T-T1-A
S21E
UPA810T-A
UPA810T-T1
ultra low noise NPN transistor
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NESG2021M16
Abstract: NESG2021M16-T3-A S21E
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz
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NESG2021M16
NESG2021M16
NESG2021M16-T3-A
S21E
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NESG2101M16
Abstract: NESG2101M16-T3-A S21E
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz
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NESG2101M16
NESG2101M16
NESG2101M16-T3-A
S21E
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NESG2031M16
Abstract: NESG2031M16-T3-A S21E
Text: NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz
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NESG2031M16
NESG2031M16
NESG2031M16-T3-A
S21E
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NE681M03
Abstract: NE AND micro-X 2SC5433 NE681 NE681M03-A NE681M03-T1-A S21E
Text: NEC's NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance
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NE681M03
NE681M03
NE681
NE AND micro-X
2SC5433
NE681M03-A
NE681M03-T1-A
S21E
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BF-104
Abstract: NE687M03 2SC5436 NE687 NE687M03-A NE687M03-T1-A S21E BJT IC Vce
Text: NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • • • OUTLINE DIMENSIONS Units in mm NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:
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NE687M03
NE687M03
BF-104
2SC5436
NE687
NE687M03-A
NE687M03-T1-A
S21E
BJT IC Vce
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NE AND micro-X
Abstract: 2SC5432 NE856 NE856M03 NE856M03-A NE856M03-T1-A S21E
Text: NPN SILICON TRANSISTOR NE856M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance • LOW NOISE FIGURE:
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NE856M03
NE856M03
NE AND micro-X
2SC5432
NE856
NE856M03-A
NE856M03-T1-A
S21E
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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nec fo 134
Abstract: B102F
Text: DATA SHEET PHOTOCOUPLERS PS2651, PS2652, PS2651L2, PS2652L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN PHOTOCOUPLER DESCRIPTION P S2651, PS2652 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon photo transistor in a plastic DIP Dual In-line Package .
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PS2651,
PS2652,
PS2651L2,
PS2652L2
S2651,
PS2652
PS2651
PS2652L2
nec fo 134
B102F
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Untitled
Abstract: No abstract text available
Text: DATA SHEET POTOCOUPLERS PS2653, PS2654, PS2653L2, PS2654L4 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN PHOTOCOUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected photo-transistor in a plastic DIP Dual In-line Package .
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PS2653,
PS2654,
PS2653L2,
PS2654L4
PS2654
PS2653
PS2654L2
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nec 2651
Abstract: ps2651-1
Text: DATA SHEET N E C PHOTO COUPLERS P S 2651 9 PS2652 P S 2651L2, PS2652L2 ELECTRON DEVICE LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 P IN PHOTO COUPLER D E S C R IP T IO N P S 2651, PS2652 are optically coupled isolators containing a GaAs light em itting diode and an NPN silicon photo-transistor in a plastic D IP Dual
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PS2652
2651L2,
PS2652L2
PS2651
PS2652L2
nec 2651
ps2651-1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET EET PHOTO COUPLERS NEC aEtrm oN PS2653 , PS2654 PS2653L2, PS2654L2 d ev ic e ‘ U ISOLATION i c m a t i r\ m xVOLTAGE /niT A fic LONG CREEPAGE TYPE HIGH 6 PIN PHOTO COUPLER DESCRIPTION PS2653, PS2654 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor in a plastic DIP Dual In-line Package .
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PS2653
PS2654
PS2653L2,
PS2654L2
PS2653,
PS2653
PS2654L2
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2532L4
Abstract: No abstract text available
Text: PHOTO COUPLERS PS2532 - 1 , - 2 , - 4 PS2532L-1, -2, -4 HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTO COUPLER SERIES - n e p o c s e r ie s - DESCRIPTION PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and
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PS2532
PS2532L-1,
PS2532-1,
VDE0884
2532L4
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diode sy 710
Abstract: No abstract text available
Text: DATA SHEET ' PHOTOCOUPLERS PS2706-1, PS2706-2, PS2706-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE SOP MULTI PHOTOCOUPLER - NEPOC Series - DESCRIPTION The P S 2706-1, -2 and -4 series are optically coupled isolator containing GaAs light em itting diodes and an NPN
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PS2706-1,
PS2706-2,
PS2706-4
diode sy 710
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