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California Eastern Laboratories (CEL) NE851M13-T3-A RF TRANS NPN 5.5V 4.5GHZ M13
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NE851M13 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
NE851M13	California Eastern Laboratories	NPN SILICON TRANSISTOR	Original	PDF
NE851M13	NEC	NE851M13	Original	PDF
NE851M13	NEC	NECs NPN SILICON TRANSISTOR	Original	PDF
NE851M13-A	NEC	TRANS GP BJT NPN 5.5V 0.1A 3M13	Original	PDF
NE851M13-T3	California Eastern Laboratories	NPN SILICON TRANSISTOR	Original	PDF
NE851M13-T3	NEC	NPN Silicon Transistor.	Original	PDF
NE851M13-T3-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN LOW PRO M13 SMD	Original	PDF
NE851M13-T3-A	NEC	TRANS GP BJT NPN 5.5V 0.1A 3M13 REEL	Original	PDF

NE851M13 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LB 11899 Abstract: NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 NE851M13 S21E NEC semiconductor 9135 Features of IC 7476 Text: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW PUSHING FACTOR 0.35 • 0.7 LOW PHASE NOISE 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS • 0.7±0.05	Original	PDF	NE851M13 NE851M13 LB 11899 NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 S21E NEC semiconductor 9135 Features of IC 7476
ic 7738 Abstract: 2SC5801 NE851M13 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240 Text: NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05 E7	Original	PDF	NE851M13 NE851M13 ic 7738 2SC5801 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240
BF166 Abstract: rbm 1 NE851M13 PARAMETERS Text: NONLINEAR MODEL SCHEMATIC NE851M13 CCBPKG 0.05 pF CCB 0.01 pF LBPKG LB 0.05 nH 0.25 nH LCPKG 0.05 nH Collector Base CCE Q1 0.25 pF LE 0.45 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 137e-18 MJC	Original	PDF	NE851M13 137e-18 4e-15 15e-12 532e-18 170e-15 4e-12 65e-12 BF166 rbm 1 NE851M13 PARAMETERS
ic 7738 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance	Original	PDF	NE851M13 NE851M13 ic 7738
2SC5801 Abstract: 2SC5801-T3 2sc5801-a "3-PIN LEAD-LESS MINIMOLD" marking 654 3pin NE851M13 Text: NPN SILICON RF TRANSISTOR NE851M13 / 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION	Original	PDF	NE851M13 2SC5801 NE851M13-A 2SC5801-A NE851M13-T3-A 2SC5801-T3-A Dissipati33 PU10085EJ02V0DS 2SC5801 2SC5801-T3 "3-PIN LEAD-LESS MINIMOLD" marking 654 3pin
ic 7738 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance	Original	PDF	NE851M13 NE851M13 15e-12 170e-15 ic 7738
IC 2262 AF Abstract: LB 11899 2SC5801 applications IC 7476 160 e7 901 704 16 08 55 MJE 280 power transistor transistor BF 697 S21E NE851M13 Text: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05	Original	PDF	NE851M13 NE851M13 4e-12 65e-12 IC 2262 AF LB 11899 2SC5801 applications IC 7476 160 e7 901 704 16 08 55 MJE 280 power transistor transistor BF 697 S21E
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	PDF	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PDF	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	PDF	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	PDF	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

ic isl 887 Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 Text: RF & マイクロ波デバイスシステムブロック www.renesas.com 2010.04 目次 1. はじめに •··········································································································································· 3	Original	PDF	PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
SMD transistor M05 Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE	Original	PDF	10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	PDF
UPC8236 Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
SMD M05 sot Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial	Original	PDF	08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
UPC8236 Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02 Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4	Original	PDF	R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	PDF	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
2SC5508 Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4	Original	PDF	R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A

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NE851M13 Search Results

NE851M13 Price and Stock

California Eastern Laboratories (CEL) NE851M13-T3-A

NE851M13 Datasheets (8)

NE851M13 Datasheets Context Search

LB 11899

ic 7738

BF166

ic 7738

2SC5801

ic 7738

IC 2262 AF

mobile phone basic block diagram

FET marking code g5d

nec mosfet marked v75

ne3511s02 s2p

transistor marking T79 ghz

nec b1007

marking code C1E SMD Transistor

ic isl 887

SMD transistor M05

BB 509 varicap diode

BGU7073

UPC8236

SMD M05 sot

UPC8236

MRF947T1 equivalent

2SC5508