VND1NV04TR-E
Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation
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VND1NV04
VNN1NV04
VNS1NV04
O-252
OT-223
VND1NV04,
VNN1NV04,
VNS1NV04
VND1NV04TR-E
Power MOSFET SOT-223
VND1NV04-E
min33
OMNIFET
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OMNIFET
Abstract: VND3NV04 VND3NV04-1 VNN3NV04 VNS3NV04 F1621
Text: VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNN3NV04 VNS3NV04 VND3NV04 RDS on Ilim Vclamp 120 mΩ 3.5 A 40 V 2 1 2 3 SO-8 SOT-223 VND3NV04-1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION
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VNN3NV04
VNS3NV04
VND3NV04
VND3NV04-1
VNN3NV04
VND3NV04
OT-223
OMNIFET
VND3NV04-1
VNS3NV04
F1621
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packing SPECIFICATION to-247
Abstract: No abstract text available
Text: VNW35NV04 VNP35NV04 OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Features Type RDS on Ilim Vclamp VNW35NV04 VNP35NV04 10 mΩ 30 A 40 V 3 c u d TO-247 • Linear current limitation ■ Thermal shut down ■ Short circuit protection
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VNW35NV04
VNP35NV04
O-247
VNP35NV04
packing SPECIFICATION to-247
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Untitled
Abstract: No abstract text available
Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 2 3 •
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VND1NV04
VNN1NV04
VNS1NV04
O-252
VND1NV04,
VNN1NV04,
VNS1NV04
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Untitled
Abstract: No abstract text available
Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 RDS(ON) 250m (1) Current limitation (typ) (1) Drain-Source clamp voltage ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation • Thermal shutdown
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VNS1NV04DP-E
VNS1NV04DP-E
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Untitled
Abstract: No abstract text available
Text: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS (on) 0.2Ω ILIMH 5A 1 VCLAMP 70V DPAK TO-252 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection
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VND5N07
O-252
O-251
ISOWATT200
OT-82FM
VND5N07
DocID4335
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B330D
Abstract: VNS1NV04D
Text: VNS1NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D RDS on 250 mΩ (*) Ilim 1.7 A (*) Vclamp 40 V (*) (*) Per each device n n n n n n n n n LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNS1NV04D
VNS1NV04D
B330D
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7382
Abstract: VNS3NV0413TR VND3NV04 VND3NV04-1 VND3NV0413TR VND3NV04-1-E VND3NV04-E VNN3NV04 VNN3NV0413TR VNS3NV04
Text: VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 Ilim Vclamp 2 1 120 mΩ 3.5 A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection
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VNN3NV04,
VNS3NV04
VND3NV04,
VND3NV04-1
VNN3NV04
VND3NV04
OT-223
2002/95/EC
7382
VNS3NV0413TR
VND3NV04
VND3NV04-1
VND3NV0413TR
VND3NV04-1-E
VND3NV04-E
VNN3NV04
VNN3NV0413TR
VNS3NV04
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TO-247
Abstract: VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04
Text: VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB35NV04 VNP35NV04 VNV35NV04 RDS on Ilim Vclamp 10 mΩ (*) 30 A 40 V 10 3 1 1 VNW35NV04 PowerSO-10 D2PAK (*) For PowerSO-10 only n LINEAR CURRENT LIMITATION
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VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04
VNB35NV04
VNV35NV04
PowerSO-10TM
PowerSO-10
TO-247
VNP35NV04
VNW35NV04
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VNP14NV04
Abstract: No abstract text available
Text: VNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04 / VNS14NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB14NV04 RDS on Ilim Vclamp 3 VND14NV04 VND14NV04-1 VNP14NV04 VNS14NV04 1 35 mΩ 12 A 40 V LINEAR CURRENT LIMITATION
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VNB14NV04
VND14NV04
VND14NV04-1/
VNP14NV04
VNS14NV04
VND14NV04-1
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ISD 3900
Abstract: No abstract text available
Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection
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VNS3NV04D-E
VNS3NV04D-E
VNS3NV04DTR-E
ISD 3900
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VNB35
Abstract: No abstract text available
Text: VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB35NV04 VNP35NV04 VNV35NV04 RDS on Ilim Vclamp 10 mΩ 30 A 40 V 10 3 1 1 VNW35NV04 PowerSO-10 D2PAK n LINEAR CURRENT LIMITATION
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VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04
PowerSO-10TM
O-220
VNB35
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VNB35NV04
Abstract: VNP35NV04 VNV35NV04
Text: VNB35NV04 / VNV35NV04 / VNP35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB35NV04 RDS on Ilim Vclamp VNV35NV04 10 mΩ 30 A 40 V 10 3 VNP35NV04 n n n n n n n n n 1 1 LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNB35NV04
VNV35NV04
VNP35NV04
VNV35NV04
VNB35NV04,
VNV35NV04,
VNP35NV04,
PowerSO-10TM
VNB35NV04
VNP35NV04
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krohne ifc 090
Abstract: Endress Hauser biffi actuator honeywell st3000 Yamatake honeywell honeywell CM42 xmt868 Yokogawa MAGNETROL vegason 62
Text: IndustrialIT FOUNDATION FIELDBUS Device Types for Freelance 800F Data Sheet Revision: July 2010 The following Device Types are interoperable with the Freelance 800F version 8.1 SP1, 8.2, 9.1 and 9.1RU1a. Freelance 800F Freelance 800F Freelance 8.1 SP1 FDT Base Container: 12.0.0.1
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2PAA103000
krohne ifc 090
Endress Hauser
biffi actuator
honeywell st3000
Yamatake honeywell
honeywell CM42
xmt868
Yokogawa
MAGNETROL
vegason 62
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VND10N06
Abstract: VND10N06-1 VND10
Text: VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS(on) 0.3Ω Ilim 10A VCLAMP 60V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection
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VND10N06
VND10N06-1
O-252
O-251
VND10N06
VND10N06-1
50KHz
VND10
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JESD97
Abstract: VNS3NV04D-E VNS3NV04DTR-E
Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection
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VNS3NV04D-E
VNS3NV04D-E
JESD97
VNS3NV04DTR-E
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VNA7NV04D
Abstract: No abstract text available
Text: VNA7NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFETS TARGET SPECIFICATION TYPE VNA7NV04D RDS on 60 mΩ (*) Ilim 6 A (*) Vclamp 40 V (*) (*) Per each device LINEAR CURRENT LIMITATION THERMAL SHUT DOWN • SHORT CIRCUIT PROTECTIONS ■ INTEGRATED CLAMP
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VNA7NV04D
VNA7NV04D
SO-16
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VNN3NV04P
Abstract: No abstract text available
Text: VNN3NV04P-E VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Features Type RDS on Ilim Vclamp VNN3NV04P-E VNS3NV04P-E 120 mΩ 3.5 A 40 V 2 1 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection
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VNN3NV04P-E
VNS3NV04P-E
OT-223
2002/95/EC
VNN3NV04P-E,
VNS3NV04P-E,
VNN3NV04P
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Untitled
Abstract: No abstract text available
Text: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.
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DocID022888
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Untitled
Abstract: No abstract text available
Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120m Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 ) s ( ct u d o • Linear current limitation ■ Thermal shut down
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VNS3NV04D-E
VNS3NV04D-E
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Untitled
Abstract: No abstract text available
Text: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.
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DocID022888
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Untitled
Abstract: No abstract text available
Text: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz
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VND5N07-E
O-252
VND5N07-E
O-251
DocID025077
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Untitled
Abstract: No abstract text available
Text: VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS(on) 0.3Ω Ilim 10A VCLAMP 60V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection
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VND10N06
VND10N06-1
O-252
O-251
VND10N06
VND10N06-1
DocID4831
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Untitled
Abstract: No abstract text available
Text: VNS3NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max on-state resistance per ch. RON 120 mΩ Current limitation (typ) ILIMH 3.5 A VCLAMP 40 V Drain-source clamp voltage • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC
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VNS3NV04DP-E
VNS3NV04DP-E
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