NCHANNEL MARKING CODE 3N Search Results

3n40

Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

3n50c

Contextual Info: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )

3N80C

Abstract: FQPF*3N80C DATE CODE FAIRCHILD
Contextual Info: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

13N06

Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
Contextual Info: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6

Contextual Info: Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

CHL8510

Abstract: IR3537 CHL8316
Contextual Info: 12V High Performance Gate Driver FEATURES IR3537 CHL8510 DESCRIPTION • Drives both high-side and low-side MOSFETs in a synchronous buck configuration  Large drivers designed to drive 6nF server class FETs o Low-side driver – 4A source / 6A sink o High-side driver – 3A source / 4A sink

CHL8510

Contextual Info: 12V High Performance Gate Driver FEATURES IR3537 CHL8510 DESCRIPTION • Drives both high-side and low-side MOSFETs in a synchronous buck configuration  Large drivers designed to drive 6nF server class FETs o Low-side driver – 4A source / 6A sink o High-side driver – 3A source / 4A sink

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

Contextual Info: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 30 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage

marking 3N1

Abstract: DMN3115UDM
Contextual Info: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V

ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Contextual Info: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a

C 38 marking code diode

Abstract: DS31523
Contextual Info: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • Mechanical Data • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance

DMN3051LDM

Abstract: J-STD-020D
Contextual Info: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PROD UCT • • • • • • Mechanical Data • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance

DMN3050S

Abstract: J-STD-020D
Contextual Info: DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage

DMN3115UDM

Contextual Info: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance

marking 3N1

Abstract: DMN3115UDM
Contextual Info: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage Low Input Capacitance

DMN3051LDM

Contextual Info: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

Contextual Info: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate

Contextual Info: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate

Contextual Info: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant Note 2 "Green" Device (Note 3)

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance

03n60

Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate