NAND FLASH SPARE AREA ASSIGNMENT Search Results

spare assignment standard

Abstract: bad block nand flash spare area assignment
Contextual Info: NAND Flash Spare Area Assignment Standard 27. April. 2005 Memory Division Samsung Electronics Co., Ltd Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology Technology SPARE AREA ASSIGNMENT STANDARD

FPT-44P-M08

Abstract: MBM30LV0064
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-3E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

526h

Abstract: FPT-44P-M08 MBM30LV0032
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-3E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store

527h

Abstract: FPT-44P-M08 MBM30LV0064
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-4E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

527H

Abstract: FPT-44P-M08 MBM30LV0032
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-4E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store

tr 512

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • GENERAL DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

FPT-44P-M08

Abstract: MBM30LV0032
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-2E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store

FPT-44P-M08

Abstract: MBM30LV0064 BGA-52P-M01
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-1E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • GENERAL DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store

20885

Abstract: 50REF FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-1E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

50REF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

samsung toggle mode NAND

Abstract: NAND FLASH SAMSUNG S3CI9E0X01 toggle mode nand samsung 1448H NAND FLASH DDP samsung 1Gb nand flash 1030h nand flash spare area assignment toggle nand
Contextual Info: S3CI9E0X01 FLASH INTERFACE DEVICE S3CI9E0X01 SPECIFICATION Version : Ver. 1.0 Date : Jul. 16. 2003 Samsung Electronics Co., LTD Semiconductor Flash Memory Product Planning & Applications SAMSUNG ELECTRONICS 1 S3CI9E0X01 FLASH INTERFACE DEVICE Revision History

X35 Microcontrollers with PMECC Controller

Abstract: Application Notes MT29F2G08AB e 85792 SLC nand hamming code 512 bytes MT29F2G08AAD MT29F2G08A mt29f*aad nand flash ONFI 3.0 MT29F2G08ABD nand memory
Contextual Info: MLC NAND Flash Support in SAM9G15/G25/G35/X25/X35 Microcontrollers with PMECC Controller 1. Introduction The purpose of this application note is to introduce the NAND Flash technology and to describe how to interface NAND Flash memory to Atmel SAM9G15/G25/G35/X25/X35 microcontrollers. The SAM9G15/G25/G35/X25/X35

9263 and AT91SAM7SE Microcontrollers

Abstract: "bad block" smartmedia ecc SmartMedia Logical Format ARM at91sam AT91SAM9260 ARM at91sam7se NAND Flash controller ecc AT91SAM AT91SAM7SE bad block
Contextual Info: Using the ECC Controller on AT91SAM9260/9263 and AT91SAM7SE Microcontrollers 1. Scope The purpose of this document is to explain how to use the Error Corrected Code ECC Controller embedded in the AT91SAM9260/9263 and AT91SAM7SE family of ARM Thumb®-based microcontrollers. The ECC controller performs 2-bit data error

KFG1216x2A-xxB5

Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial

Contextual Info: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)/63FBGA

Contextual Info: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended

8044H

Abstract: SAMSUNG 256Mb NAND Flash Qualification Report
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB5 2.65V(2.4V~2.9V) Extended

512MB NOR FLASH

Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial

SAMSUNG 256Mb NAND Flash Qualification Report

Contextual Info: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Samsung 2Gb 3V MLC Nand flash

Abstract: 63FBGA KFM1216Q2A-DEB6 schematic Samsung lcd power supply unit SLC NAND endurance 100k
Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB6) 1.0 FLASH MEMORY

Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB6) 1.0 FLASH MEMORY

KFG1G16U2C

Abstract: 63FBGA KFG1G16U2
Contextual Info: OneNAND1Gb KFG1G16U2C-xIB6 FLASH MEMORY KFG1G16U2C 1Gb OneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

KFG1G16U2C

Abstract: 63FBGA
Contextual Info: Advanced OneNAND1Gb KFG1G16U2C-xIB6 FLASH MEMORY KFG1G16U2C 1Gb OneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,