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    NAND FLASH MEMORY PACKAGE TYPE Search Results

    NAND FLASH MEMORY PACKAGE TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    NAND FLASH MEMORY PACKAGE TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nand512w3a2dn6

    Abstract: NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E
    Text: product line card Numonyx NAND flash memory Numonyx® NAND flash memory A broad offering of discrete parts to meet a variety of application requirements PRODUCT overview Density Part Number Density NAND Family Voltage Bus Width - Flash Package Type Package Dimension


    Original     		PDF NAND128W3A2BN6E TSOP48 12x20mm NAND128W3A0BN6E NAND128W3A2BDI6 NAND256W3A2BN6E nand512w3a2dn6 NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E

    MBM30AL0064

    Abstract: NAND FLASH BGA MB84VN23381EJ-90
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) NAND-Type FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VN23381EJ-90 • FEATURES — NAND-Type FLASH MEMORY • Operating Voltage:2.7V to 3.3V


    Original     		PDF MB84VN23381EJ-90 MBM30AL0064 NAND FLASH BGA MB84VN23381EJ-90

    NAND FLASH BGA

    Abstract: MB84VN23391EJ-90 MBM30AL0064
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) NAND-Type FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VN23391EJ-90 • FEATURES — NAND-Type FLASH MEMORY • Operating Voltage: 2.7V to 3.3V


    Original     		PDF MB84VN23391EJ-90 NAND FLASH BGA MB84VN23391EJ-90 MBM30AL0064

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256

    SAMSUNG MCP

    Abstract: MCP NAND
    Text: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die


    Original     		PDF K5P2881BCM 16Mx8) 512Kx16) 69-Ball SAMSUNG MCP MCP NAND

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1

    SAMSUNG MCP

    Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
    Text: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF K5D5657DCM-F015 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball SAMSUNG MCP Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package

    Samsung MCP

    Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
    Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF K5D5657ACM-F015 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Samsung MCP MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    SAMSUNG MCP

    Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
    Text: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00E007M-FGGV 256Mb 16Mx16) 4Mx16x4Banks) 107-Ball 80x13 SAMSUNG MCP KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball

    Flash MCp nand DRAM 107-ball

    Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
    Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00J007M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball 80x13 Flash MCp nand DRAM 107-ball dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka

    SAMSUNG MCP

    Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
    Text: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1


    Original     		PDF K5D1G58KCM-D090 128Mx8) 2Mx32x4Banks) 256Mb 119-Ball SAMSUNG MCP 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp

    SAMSUNG MCP

    Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
    Text: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0


    Original     		PDF KBE00D002M-F407 16Mx16) 2Mx16x4Banks) 128Mb 137-Ball 80x14 SAMSUNG MCP F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm

    SAMSUNG MCP

    Abstract: KAL00B00CM-FG22 UtRAM Density Kal00 a9hv
    Text: Preliminary MCP MEMORY KAL00B00CM-FG22 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 256M Bit (8Mx8x4Banks) Mobile SDRAM*2 Revision History Revision No. History 0.0 Draft Date Initial draft. - 256Mb NAND C-Die_Ver 2.7 - 512Mb MSDRAM E-Die DDP_Ver0.4


    Original     		PDF KAL00B00CM-FG22 16Mx16) 256Mb 512Mb 107-Ball 80x13 SAMSUNG MCP KAL00B00CM-FG22 UtRAM Density Kal00 a9hv

    SAMSUNG MCP

    Abstract: MCP MEMORY MCP 256M nand 128M mobile sdram UtRAM Density samsung nor nand ddr mcp samsung mcp ka Kal00 nand sdram mcp
    Text: Preliminary MCP MEMORY KAL00B00BM-FGV X V(X) Document Title Multi-Chip Package MEMORY 256M Bit (16Mx16) Nand Flash / 128M Bit (4Mx8x4Banks) Mobile SDRAM*2 Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial draft. - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAL00B00BM-FGV 16Mx16) 256Mb 127-Ball 80x12 08MAX SAMSUNG MCP MCP MEMORY MCP 256M nand 128M mobile sdram UtRAM Density samsung nor nand ddr mcp samsung mcp ka Kal00 nand sdram mcp

    SAMSUNG MCP

    Abstract: MCP NAND SAMSUNG MCp nand UtRAM Density
    Text: Preliminary MCP MEMORY K5Q5764G0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - 256Mb NAND C-Die_Ver 2.6 - 64Mb UtRAM B-Die(Burst)_Ver 0.4


    Original     		PDF K5Q5764G0M 16Mx16) 4Mx16) 256Mb 111-Ball SAMSUNG MCP MCP NAND SAMSUNG MCp nand UtRAM Density

    K5D1258

    Abstract: k5d12 SAMSUNG MCP
    Text: Target MCP MEMORY K5D1258KCM-D075 Document Title Multi-Chip Package MEMORY 512M Bit 64Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date Initial issue. - 512Mb NAND B-Die_ Ver 0.1 - 256Mb Mobile SDRAM F-Die_Ver 1.1 March 10, 2005


    Original     		PDF K5D1258KCM-D075 64Mx8) 2Mx32x4Banks) 512Mb 256Mb 119-Ball K5D1258 k5d12 SAMSUNG MCP

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


    Original     		PDF KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


    Original     		PDF KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


    Original     		PDF KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60