Untitled
Abstract: No abstract text available
Text: DMC364A7 Tentative Total pages page DMC364A7 Silicon NPN epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) For digital circuits Marking Symbol : N9 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C
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DMC364A7
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DRCF114W
Abstract: No abstract text available
Text: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114W
DRCF114W
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50-12P1
Abstract: S2485
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features
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50-12P1
42T120
50-12P1
S2485
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25T60
Abstract: .25T60 RG60s
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 T16 Pin arangement see outlines t O7 S18 Features Maximum Ratings VCES
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50-06P1
25T60
25T60
.25T60
RG60s
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237td
Abstract: No abstract text available
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions
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50-06P1
25T60
237td
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PDF
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50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
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50-12P1
42T120
50-12P1
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RS468
Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive
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O-220
O-243
OT-89)
OT-23
RS468
transistor dg sot-23
BENT LEAD transistor TO-92 Outline Dimensions
P005
n7 transistor
P012
B W4 Transistor
GP007
transistor W4 sot-23
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LDTC124GET1G
Abstract: SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC124GET1G
SC-89
463C-01
463C-02.
LDTC124GET1G
SC-89
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REF 200U K
Abstract: LDTC123JWT1G Transistor marking 1M
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC123JWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTC123JWT1G
REF 200U K
LDTC123JWT1G
Transistor marking 1M
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SOT23 W1P
Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23
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BF547
BF547W
BF747
BFC505
OT323
OT353
OT143
SOT23 W1P
MARKING W1P
transistor w1P
MARKING W2 SOT23
marking code R2 sot23
marking code w2 sot23
marking code W1p
marking code P2p SOT23
marking W1 sot23
marking code w2 sot323
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MHW5181A
Abstract: MHW5142A MHW5181 GP 140 300C MHW5182A MHW5142 MHW5142AID
Text: MOTOROM SEMICONDUCTOR ,’0 TECHNICAL Order this document by MHW5142AID DATA -L The RF Line 450 MHz CAW Amplifier , MHW5142A . . . designed specifically for 450 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fi and an all gold metallization
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MHW5142AID
MHW5142A
MHW5142A/D
MHW5181A
MHW5142A
MHW5181
GP 140
300C
MHW5182A
MHW5142
MHW5142AID
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BFG540 N43
Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE
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BF547
BF547W
BF689K
BF747
OT323
OT353
OT143
BFG540 N43
w1p 22
SOT23 W1P
sot143 Marking code V12
"W1P"
f763
SOT89 MARKING CODE
marking code V3
SOT89 N5 MARKING CODE
V3 marking code
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Untitled
Abstract: No abstract text available
Text: AN11199 UBA2015 TL Ballast for multiple lamps with independent lamp operation Rev. 1 — 24 December 2012 Application note Document information Info Content Keywords UBA2015, tube lamp TL , Independent lamp operation (ILO) Abstract This application note describes how to drive multiple lamps with a
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AN11199
UBA2015
UBA2015,
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LPC 836 red laser diode
Abstract: LPC 826 red laser diode CN802 PWB 826 service manual transistor N14 193 K2EEYB000001 CN603 DL3U21518AAA toshiba dvd hdd schematic diagram ic 804
Text: ORDER NO. CPD0603050C1 Notebook Computer CF-74 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-74CCBAXBM 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.
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CPD0603050C1
CF-74
CF-74CCBAXBM
EN60825
CF-74
LPC 836 red laser diode
LPC 826 red laser diode
CN802
PWB 826 service manual
transistor N14 193
K2EEYB000001
CN603
DL3U21518AAA
toshiba dvd hdd schematic diagram
ic 804
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W521
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR * 3 GREEN O TECHNICAL Order this document by MGSF3441XT1/D DATA LINE’” MGsF344iml Preliminary /nformation MotorolaPrefarred Device Low r~S(on Small-Signal MOSFE7S TMOS Single P-Channel Field Effect Transistors Pan of the GreenLineTM Potiolio
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MGSF3441XT1/D
MGsF344iml
30M75-2140
MGSF3441XT11D
W521
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Untitled
Abstract: No abstract text available
Text: measuring Positive Displacement Flowmeter • monitoring • analyzing DOM ● Threaded, Flanged, and High Pressure Series ● Aluminum or Stainless Steel Bodies ● Measures Liquids with Viscosities to 1,000 cPs Higher with Special Cut Rotors ● Operating Pressures to 5,800 PSIG
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small signal transistor MOTOROLA
Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
Text: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”
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by2N3621JTND
2N3821JTX,
MlL4-19500/375
TM06AF
2N3821JTX
PHW4101
2Ns21JmD
small signal transistor MOTOROLA
w21 transistor
MOTOROLA small signal transistor
FIDL
5Bp transistor
MOTOROLA TRANSISTOR
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VVQ4000-50B-C8
Abstract: SMC - SY5120 SY3120-5LOU-C6-Q jst connector JST p-2 58A03 SY3140-5LOU-Q SY5120-L-C6 DIN43650C 664AB JISC0704
Text: CAT.EUS11-83 B -UK 5 Port Solenoid Valve Power Consumption With Power Saving Circuit SY Series Improved pilot valve Pilot valve cover is stronger using stainless steel. Mounting thread is also reinforced from size M1.7 to M2. Flow Characteristics Series
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EUS11-83
SY3000
SY5000
SY7000
SY9000
G15-10-01)
ARBY3000
ARBY3000-05--2
VVQ4000-50B-C8
SMC - SY5120
SY3120-5LOU-C6-Q
jst connector JST p-2
58A03
SY3140-5LOU-Q
SY5120-L-C6
DIN43650C
664AB
JISC0704
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KRC416V
Abstract: N912 KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V
Text: SEMICONDUCTOR KRC416V~KRC422V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. G 1 3 K H A D 2 ᴌReduce a Quantity of Parts and Manufacturing Process.
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KRC416V
KRC422V
KRC421V
KRC420V
KRC418V
KRC417V
KRC419V
KRC416V
N912
KRC417V
KRC418V
KRC419V
KRC420V
KRC421V
KRC422V
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FCX5550
Abstract: FCX5401 DS155
Text: FCX5550 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES * HIGH V ceo =1 40V. * * LOW V c eis at =0.25V. C O M PLEM ENTARY TYPE - FCX5401 PARTMARKING DETAILS - N9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage
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OCR Scan
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FCX5401
FCX5550
100mA
100MHz
250uA,
DD0A32T
DS155
FCX5550
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TCA 2025 b
Abstract: transistor v63 TCA 2025 STH4N90 STH4N90FI 0C183
Text: Zu SGS-THOMSON S TH 4 N90 S TH 4 N9 0 FI « M L Iig T T IM O tS S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH4N90 STH4N90F! dss 900 V 900 V R DS on Id < 3.2 Q < 3.2 Q 4.2 A 2.7 A . TYPICAL RDS(on) = 2.9 Q . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED
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OCR Scan
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STH4N90
STH4N90FI
STH4N90
STH4N90FI
P025C
STH4N90/FI
O-218
OT-93)
TCA 2025 b
transistor v63
TCA 2025
0C183
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SOT23 W1P
Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X
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OCR Scan
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BF547
BF547W
BF689K
BF747
BF763
BFC505
BFC520
BFE505
BFE520
BFG10
SOT23 W1P
BFG540 N43
SOT89 MARKING CODE
"W1P"
MARKING W1P
sot143 Marking code p1
PSH10
sot143 sot343
marking code V3
w1p code
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KRC116S
Abstract: KRC117S KRC118S KRC119S KRC120S KRC121S KRC122S KRC118 mark n2
Text: KRC116SSEMICONDUCTOR KRC122S EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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krc116s-
krc122s
KRC116S
KRC117S
KRC118S
KRC119S
KRC120S
KRC121S
KRC122S
KRC118S
KRC118
mark n2
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kec 168
Abstract: KRC416 KRC417 KRC418 KRC419 KRC420 KRC421 KRC422 r2kq
Text: KOREA ELECTRONICS CO.,LTD. KRC416KRC422 SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRC416-KRC422
KRC416
KRC417
KRC418
KRC419
KRC420
KRC421
KRC422
MAXIMU17
KRC418
kec 168
r2kq
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