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    N20 N Search Results

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    N20 N Price and Stock

    Murata Manufacturing Co Ltd LQW15AN20NG8ZD

    FIXED IND 20NH 800MA 0.186OHM SM
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    DigiKey LQW15AN20NG8ZD Cut Tape 36,418 1
    • 1 $0.21
    • 10 $0.161
    • 100 $0.1254
    • 1000 $0.09733
    • 10000 $0.08795
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    LQW15AN20NG8ZD Digi-Reel 36,418 1
    • 1 $0.21
    • 10 $0.161
    • 100 $0.1254
    • 1000 $0.09733
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    LQW15AN20NG8ZD Reel 20,000 10,000
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    TTI LQW15AN20NG8ZD Reel 10,000
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    Infineon Technologies AG BSZ22DN20NS3GATMA1

    MOSFET N-CH 200V 7A 8TSDSON
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    DigiKey BSZ22DN20NS3GATMA1 Digi-Reel 18,641 1
    • 1 $1.64
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    BSZ22DN20NS3GATMA1 Cut Tape 18,641 1
    • 1 $1.64
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    BSZ22DN20NS3GATMA1 Reel 15,000 5,000
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    Rochester Electronics BSZ22DN20NS3GATMA1 3,054 1
    • 1 $0.4638
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    Chip1Stop BSZ22DN20NS3GATMA1 Cut Tape 14,410
    • 1 $0.874
    • 10 $0.715
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    BSZ22DN20NS3GATMA1 Cut Tape 4,990
    • 1 $0.874
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    EBV Elektronik BSZ22DN20NS3GATMA1 17 Weeks 5,000
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    Murata Manufacturing Co Ltd LQW15AN20NH00D

    FIXED IND 20NH 370MA 0.27OHM SMD
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    DigiKey LQW15AN20NH00D Digi-Reel 7,877 1
    • 1 $0.1
    • 10 $0.076
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    LQW15AN20NH00D Cut Tape 7,877 1
    • 1 $0.1
    • 10 $0.076
    • 100 $0.0588
    • 1000 $0.04566
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    Avnet Abacus LQW15AN20NH00D 20,000 17 Weeks 10,000
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    ROHM Semiconductor UMN20NTR

    DIODE ARRAY GP 80V 100MA UMD6
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    DigiKey UMN20NTR Reel 3,000 3,000
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    UMN20NTR Digi-Reel 3,000 1
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    • 1000 $0.18458
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    UMN20NTR Cut Tape 3,000 1
    • 1 $0.68
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    UMN20NTR Cut Tape 34 1
    • 1 $0.46
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    Ameya Holding Limited UMN20NTR 3,000 1
    • 1 $0.47
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    Chip1Stop UMN20NTR Cut Tape 258
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    ROHM Semiconductor RFN20NS4STL

    DIODE GEN PURP 430V 20A LPDS
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    DigiKey RFN20NS4STL Cut Tape 883 1
    • 1 $3.18
    • 10 $2.068
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    RFN20NS4STL Digi-Reel 883 1
    • 1 $3.18
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    • 1000 $1.16332
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    TTI RFN20NS4STL Reel 1,000
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    • 1000 $1.08
    • 10000 $0.99
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    Ameya Holding Limited RFN20NS4STL 25 1
    • 1 $1.62
    • 10 $1.21
    • 100 $0.65
    • 1000 $0.58
    • 10000 $0.58
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    Chip1Stop RFN20NS4STL Cut Tape 2,082
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    N20 N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N20

    Abstract: 42N20 DIODE N20 IXFH58N20 58N20
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH 58 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous


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    PDF 42N20 50N20 58N20 O-204AE 50N20 42N20 DIODE N20 IXFH58N20 58N20

    fuse n20

    Abstract: n20 fuse 160A Fuse bs88 curve bussmann hrc fuse bs88 200a BS88 fuse curve bs88 160A fuse curve
    Text: Bussmann BS88, IEC269 N20 Industrial HRC Fuse Links 660V Special Slotted Tag Arrangement Time-Current Characteristic Curve 125A 160A 200A 250A 315A Dimensional Data Carton Quantities: 1 per carton all ratings Ordering Code: Rating followed by N20 2 Catalog


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    PDF IEC269 fuse n20 n20 fuse 160A Fuse bs88 curve bussmann hrc fuse bs88 200a BS88 fuse curve bs88 160A fuse curve

    PA6 GF 30

    Abstract: IEC 61076-2-101 61076-2 AWG18 60512-9a 4300-097 IEC 60512-2 PA6 GF PA6 GF 40
    Text: Technical specification: ~28,5 n20 43 Female connector M12x1 field attachable n20 5 max. external cable diameter see table 1 2 4 4pos 250 V 5pos 60 V Current rating: IEC 61076-2-101 4A at 40°C Insulation resistance: IEC 60512-2 >=10 G Ù Pollution degree:


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    PDF 60512-9a M12x1 AWG18 2768-m S6/075 S8/075 M12x1, 43K1A835 PA6 GF 30 IEC 61076-2-101 61076-2 60512-9a 4300-097 IEC 60512-2 PA6 GF PA6 GF 40

    PA6 GF 30

    Abstract: IEC 61076-2-101 ISO 2768 PA6 PA6 GF 40 ISO 2768-M PA6 GF 10 ISO 2768 m12x1 female connector AWG18 61076-2-101
    Text: Technical specification: ~57 n20 Female connector M12x1 field attachable max. external cable diameter see table n20 1 4 2 3 1 5pos 60 V Current rating: IEC 61076-2-101 4A at 40°C Insulation resistance: IEC 60512-2 >=10 GÙ Pollution degree: IEC 60664-1 3/2


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    PDF 60512-9a M12x1 AWG18 2768-m S6/075 S8/075 M12x1, 43K1A834 PA6 GF 30 IEC 61076-2-101 ISO 2768 PA6 PA6 GF 40 ISO 2768-M PA6 GF 10 ISO 2768 m12x1 female connector 61076-2-101

    74n20

    Abstract: No abstract text available
    Text: High Current MegaMOSTMFET VDSS IXTK 74 N20 IXTH 68 N20 ID25 200 V 200 V RDS on 74 A 35 mW 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


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    PDF 74N20 68N20 O-26e 74n20

    50N20

    Abstract: 42N20 4250A DIODE N20
    Text: VDSS MegaMOSTMFET IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V


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    PDF 42N20 50N20 O-204 O-247 O-204 O-247 50N20 42N20 4250A DIODE N20

    N20A

    Abstract: MS-001
    Text: Revised January 1999 Package N20A 20-Lead Plastic Dual-In-Line Package PDIP , JEDEC MS-001, 0.300” Wide Package Number N20 1999 Fairchild Semiconductor Corporation n20a.prf www.fairchildsemi.com Package N20A January 1999


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    PDF 20-Lead MS-001, N20A MS-001

    RFP12N18

    Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
    Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20


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    PDF RFM12 RFP12N O204AA, O220AB) RFM12N18, RFM12N20, RFP12N18, RFP12N20 RFP12N18 RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12

    12.5 MHZ crystal

    Abstract: No abstract text available
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China. Characteristics: ● small size


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    PDF O-N20 30ppb 15ppb 100ppb HY-OS2522FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N25 12.5 MHZ crystal

    Untitled

    Abstract: No abstract text available
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China Characteristics: ● s mall s ize


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    PDF O-N20 30ppb 15ppb 100ppb HY-ON20FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N38A O-N25

    marking N20

    Abstract: SO2222A SO2907A
    Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A


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    PDF SO2222A OT-23 SO2907A OT-23 marking N20 SO2222A SO2907A

    SO2222A

    Abstract: SO2907A marking n20
    Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A


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    PDF SO2222A OT-23 SO2907A OT-23 SO2222A SO2907A marking n20

    SMD transistor n25

    Abstract: O-N51A
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China Characteristics: ● small size ●


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    PDF O-N20 30ppb 15ppb 100ppb HY-ON20FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N25 O-S25 SMD transistor n25 O-N51A

    n20 n

    Abstract: No abstract text available
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China. Characteristics: ● s mall size


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    PDF O-N20 30ppb 15ppb 100ppb HY-OS2522FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N38A n20 n

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS PARAMETERS RESONANT FREQUENCY RESONANT IMPEDANCE MAX MAX INPUT VOLTAGE CAPACITANCE @ 1kHZ PLATE MATERIAL OPERATING TEMPERATURE STORAGE TEMPERATURE VALUES 2,000 ± 500 300 30 45,000 ± 30% BRASS -20 ~ +70 -30 ~ +80 n20 UNITS Hz Ohm Vp-p pF


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    PDF UL1571 2011/65/EU AB2720B-LW100-R AB2720B-LW100-R

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS PARAMETERS RESONANT FREQUENCY RESONANT IMPEDANCE MAX MAX INPUT VOLTAGE CAPACITANCE @ 1kHZ PLATE MATERIAL OPERATING TEMPERATURE STORAGE TEMPERATURE VALUES 2,000 ± 500 300 30 45,000 ± 30% BRASS -20 ~ +70 -30 ~ +80 n20 UNITS Hz Ohm Vp-p pF


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    PDF UL1571 2011/65/EU AB2720B-LW100-R AB2720B-LW100-R

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL DATA MLCC007 – OCTOBER 1994 FQ R-CDCC-N20 LEADLESS CERAMIC CHIP CARRIER 0.685 (17,40) 0.665 (16,89) 0.030 (0,76) MIN 0.357 (9,07) 0.343 (8,71) 0.092 (2,34) 0.069 (1,75) 10 11 0.028 (0,71) 0.022 (0,56) 0.008 (0,20) RAD TYP 0.608 (15,44) 0.592 (15,04)


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    PDF MLCC007 R-CDCC-N20)

    Untitled

    Abstract: No abstract text available
    Text: Materials: CuZn Plating: Nickel gal. n20 Material: 2,65 M16x1,5 Directive 2002/95/EC RoHS compliant DO NOT ALTER CAD DRAWING BY HAND Width across flats 18 Index: a 24.03.11 VF Ä3941 data sheet revised date drawn 19.09.08 appd. general tolerance: 0,0 0,00


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    PDF M16x1 2002/95/EC 43K1A743

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


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    PDF IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20

    Untitled

    Abstract: No abstract text available
    Text: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2


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    PDF O-247AD 74N20 68N20 O-264

    1534F

    Abstract: 50n20
    Text: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous


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    PDF 42N20 50N20 50N20 O-247 O-204 O-247 1534F

    mq68

    Abstract: No abstract text available
    Text: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il


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    PDF to150 74N20 68N20 O-247AD O-264 mq68

    54F74

    Abstract: F1024 SS02
    Text: Philips Semiconductors Military FAST Products Product specification Dual D-type flip-flop 54F74 DESCRIPTION ORDER CODE PACKAGE DESCRIPTION* 14-Pin Ceramic DIP 54F74/BCA GDIP1-T14 14-Pin Ceramic FlatPack 54F74/BDA GDFP-T14 20-Pin Ceramic LLCC 54F74/B2A CQCC2-N20


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    PDF 54F74 14-Pin 54F74/BCA GDIP1-T14 54F74/BDA GDFP-T14 20-Pin 54F74/B2A CQCC2-N20 54F74 F1024 SS02

    philips dl 711 delay

    Abstract: DL 711 PHILIPS
    Text: Philips Semiconductors Military FAST Products Product specification Dual D-type flip-flop 54F74 DESCRIPTION ORDER CODE PACKAGE DESCRIPTION* 14-Pin Ceramic DIP 54F74/BCA GDIP1-T14 14-Pin Ceramic FlatPack 54F74/BDA GDFP-T14 20-Pin Ceramic LLCC 54F74/B2A CQCC2-N20


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    PDF 54F74 54F74 500ns philips dl 711 delay DL 711 PHILIPS