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    N02 MOSFET Search Results

    N02 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N02 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LN2302

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G S-LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 Features 2 High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G S-LN2302LT1G 236AB) AEC-Q101 OT-23 LN2302

    transistor sc 308

    Abstract: NTES1N02 n02 mosfet
    Text: NTES1N02 Product Preview Power MOSFET 50 mAmps, 20 Volts N–Channel SC–75 • • • • • 2.5 V Gate Drive Low Threshold Voltage: Vth = 0.5 to 1.5 V High Speed Enhancement Mode Small Package http://onsemi.com 50 mAMPS 20 VOLTS RDS on = 10 W N–Channel


    Original     		PDF NTES1N02 75/SOT 416ONlit r14525 NTES1N02/D transistor sc 308 NTES1N02 n02 mosfet

    n02 marking code sot

    Abstract: transistor sc 308 NTUD01N02
    Text: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits


    Original     		PDF NTUD01N02 r14525 NTUD01N02/D n02 marking code sot transistor sc 308 NTUD01N02

    80n02

    Abstract: 80 N02 n02 mosfet 80-N02 on 80n02 NTD80N02T4 ntd80n02
    Text: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Package May be Available. The G−Suffix Denotes a


    Original     		PDF NTD80N02 369AA 1E-05 1E-04 1E-03 1E-02 1E-01 80n02 80 N02 n02 mosfet 80-N02 on 80n02 NTD80N02T4

    sot-23 single diode mark PD

    Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 3000/Tape LN2302LT3G 000/Tape 195mm 150mm 3000PCS/Reel sot-23 single diode mark PD LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23

    triac mw 131 600d

    Abstract: 65n06
    Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717


    Original     		PDF

    80n02

    Abstract: NTD80N02
    Text: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Package May be Available. The G−Suffix Denotes a


    Original     		PDF NTD80N02 369AA NTD80N02/D 80n02

    n02 mosfet

    Abstract: 80 n02 fet 85N02R NTD85N02R
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss


    Original     		PDF NTD85N02R NTD85N02RG NTD85N02R-001 NTD85N02R-1G NTD85N02RT4 NTD85N02RT4G BRD8011/D. n02 mosfet 80 n02 fet 85N02R

    80n02

    Abstract: 80 N02 80-N02 NTD80N02T4G on 525 80n02
    Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • Pb−Free Package is Available Typical Applications


    Original     		PDF NTD80N02 369AA NTD80N02/D 80n02 80 N02 80-N02 NTD80N02T4G on 525 80n02

    Untitled

    Abstract: No abstract text available
    Text: Product specification 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM61N02F

    80n02

    Abstract: NTD80N02G 369D NTD80N02 NTD80N02T4 NTD80N02T4G 80-N02 on 525 80n02
    Text: NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • Pb−Free Packages are Available Typical Applications


    Original     		PDF NTD80N02 NTD80N02/D 80n02 NTD80N02G 369D NTD80N02 NTD80N02T4 NTD80N02T4G 80-N02 on 525 80n02

    WTC2302

    Abstract: No abstract text available
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement


    Original     		PDF WTC2302 OT-23 OT-23 250uA 24-Aug-09 WTC2302

    Untitled

    Abstract: No abstract text available
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive


    Original     		PDF WTC2302 OT-23 OT-23 09-May-05

    F 5M 365 R

    Abstract: 5M 365 R SOT23 MARKING N02 n02 mosfet 948S
    Text: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits


    Original     		PDF NTUD01N02 88/SOTU F 5M 365 R 5M 365 R SOT23 MARKING N02 n02 mosfet 948S

    NTD85N02R

    Abstract: No abstract text available
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Pb−Free Packages are Available


    Original     		PDF NTD85N02R NTD85N02R/D

    2416w

    Abstract: NTD85N02R
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge VDSS RDS(ON) TYP ID MAX 24 V 4.8 mΩ


    Original     		PDF NTD85N02R NTD85N02R/D 2416w NTD85N02R

    80n02

    Abstract: on 80n02 GE SOT-223 MARKING 80-N02 80 N02 SOT23 5 MARKING N02 NTD80N02 NTD80N02T4 N021
    Text: NTD80N02 Advance Information Power MOSFET 80 Amps, 24 Volts N–Channel DPAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 80 AMPERES 24 VOLTS RDS on = 5.0 mΩ (Typ.)


    Original     		PDF NTD80N02 r14525 NTD80N02/D 80n02 on 80n02 GE SOT-223 MARKING 80-N02 80 N02 SOT23 5 MARKING N02 NTD80N02 NTD80N02T4 N021

    NTD85N02R

    Abstract: 85N02 NTD85N02RG 369D AN569 NTD85N02RT4 NTD85N02RT4G transistor n02 80 n02 fet
    Text: NTD85N02R Power MOSFET 85 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss


    Original     		PDF NTD85N02R NTD85N02R/D NTD85N02R 85N02 NTD85N02RG 369D AN569 NTD85N02RT4 NTD85N02RT4G transistor n02 80 n02 fet

    d30 n02

    Abstract: n02 mosfet marking code dpak 425 NTD30N02
    Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 30 AMPERES 24 VOLTS RDS on = 11.2 mW (Typ.) Typical Applications


    Original     		PDF NTD30N02 tpv10 d30 n02 n02 mosfet marking code dpak 425

    80n02

    Abstract: bergquist ge ntd80n02
    Text: NTD80N02 Power MOSFET 80 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • Power Supplies Converters


    Original     		PDF NTD80N02 NTD80N02/D 80n02 bergquist ge

    ZXM61N02F

    Abstract: ZXM61N02FTA ZXM61N02FTC top marking G62 DSA003663 n02 mosfet
    Text: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)=0.18⍀ ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM61N02F ZXM61N02FTA D-81673 ZXM61N02F ZXM61N02FTA ZXM61N02FTC top marking G62 DSA003663 n02 mosfet

    marking 93A

    Abstract: ZXM61N02F ZXM61N02FTA ZXM61N02FTC
    Text: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM61N02F ZXM61N02FTA marking 93A ZXM61N02F ZXM61N02FTA ZXM61N02FTC

    Untitled

    Abstract: No abstract text available
    Text: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXM61N02F

    mosfet rqw 130

    Abstract: amp op 4565 N02 Transistor rf RC 4565 RC 4565 SO TRANSISTOR 1PW Nippon capacitors 0/N02 Transistor rf
    Text: 19- 1252; Rev 0; 7/97 V M / X I Æ Quad/Dual, Low -Voltage, B idirectional RF/Video S w itch es Features ♦ High 500 Off Isolation: -83dB at 10MHz ♦ Low 500 Crosstalk:-87dB at 10MHz ♦ DC to 350MHz -3dB Signal Bandwidth ♦ 600 Signal Paths with ±5V Supplies


    OCR Scan     		PDF MAX4565/MAX4566/MAX4567 350MHz MAX4565 MAX4566 MAX4567 -83dB 10MHz. MAX4566CSE MAX4566CEE MAX4566C/D mosfet rqw 130 amp op 4565 N02 Transistor rf RC 4565 RC 4565 SO TRANSISTOR 1PW Nippon capacitors 0/N02 Transistor rf