Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N-CHANNEL MOSFET 600V 20A Search Results

    N-CHANNEL MOSFET 600V 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET 600V 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    w20nm

    Abstract: w20nm60 p20nm60fp P20NM60FP equivalent
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω


    Original
    PDF STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm w20nm60 p20nm60fp P20NM60FP equivalent

    W20NM60

    Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original
    PDF STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STB20NM60 STB20NM60-1 W20NM60 P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original
    PDF STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 STB20NM60-1 w20nm60 w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 STB20NM60 STB20NM60-1 P20NM60FP equivalent STP20NM60
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original
    PDF STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm60 w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 P20NM60FP equivalent

    mosfet 20n60

    Abstract: 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET 20N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 20N60 20N60 O-247 QW-R502-587 mosfet 20n60 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET

    mosfet 20n60

    Abstract: IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 20N60 20N60 20N60L-T47-T 20N6ntarily, QW-R502-587 mosfet 20n60 IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 20N60 20N60 QW-R502-587

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 20N60 20N60 QW-R502-587

    mosfet 20n60

    Abstract: 20n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 20N60 20N60 QW-R502-587 mosfet 20n60

    20N60

    Abstract: 20N60 mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    PDF 20N60 20N60 QW-R502-587 20N60 mosfet

    RG 2006 10A 600V

    Abstract: No abstract text available
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original
    PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP RG 2006 10A 600V

    W20NM60

    Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
    Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original
    PDF STF20NM60FD STP20NM60FD STW20NM60FD O-220 O-220FP O-247 O-247 W20NM60 w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST

    w20nm60

    Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original
    PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP w20nm60 w20nm60fd P20NM60FD F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST

    STW20NM60N

    Abstract: STW20NM60
    Text: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 n n n n n n VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE


    Original
    PDF STW20NM60 O-247 STW20NM60N STW20NM60

    STW20NM60N

    Abstract: STW20NM60
    Text: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 n n n n n n VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE


    Original
    PDF O-247 STW20NM60 O-247 STW20NM60N STW20NM60

    circuit diagram of 24V 20A SMPS

    Abstract: circuit diagram of 24V 40A SMPS STE40NC60
    Text: STE40NC60 N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh II MOSFET TYPE STE40NC60 n n n n n VDSS RDS on ID 600V < 0.13Ω 40 A TYPICAL RDS(on) = 0.098 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original
    PDF STE40NC60 circuit diagram of 24V 20A SMPS circuit diagram of 24V 40A SMPS STE40NC60

    circuit diagram of 24V 20A SMPS

    Abstract: MOSFET 40A 600V STE40NC60 circuit diagram of 24V 40A SMPS
    Text: STE40NC60 N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh II MOSFET n n n n n TYPE VDSS RDS on ID STE40NC60 600V < 0.13Ω 40 A TYPICAL RDS(on) = 0.098 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original
    PDF STE40NC60 circuit diagram of 24V 20A SMPS MOSFET 40A 600V STE40NC60 circuit diagram of 24V 40A SMPS

    Untitled

    Abstract: No abstract text available
    Text: FCB20N60_F085 N-Channel MOSFET November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198mΩ D D Features „ Typ rDS on = 173mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101


    Original
    PDF FCB20N60

    Untitled

    Abstract: No abstract text available
    Text: FCB20N60F_F085 N-Channel MOSFET December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mΩ D D Features „ Typ rDS on = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101


    Original
    PDF FCB20N60F

    Mosfet

    Abstract: SSF20N60H
    Text: SSF20N60H 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.2ohm(typ.) ID 20A TO247 High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product


    Original
    PDF SSF20N60H SSF20N60H Mosfet

    20nm60

    Abstract: W 20NM60 *b20nm6 STB20NM60-1
    Text: STP20NM60 - STP20NM60FP STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/TO-220FP/I PAK MDmesh Power MOSFET ADVANCED DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM60/FP 600V <0.29Ω 20 A STB20NM60-1 600V <0.29Ω 20 A TYPICAL RDS(on) = 0.25Ω


    Original
    PDF O-220/TO-220FP/I STP20NM60/FP STB20NM60-1 STP20NM60 STP20NM60FP O-220 O-220FP 20nm60 W 20NM60 *b20nm6 STB20NM60-1

    Mosfet

    Abstract: SSF20NS60F
    Text: SSF20NS60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 170mΩ(typ.) ID 20A TO220F High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product


    Original
    PDF SSF20NS60F O220F SSF20NS60F ContS60F Mosfet

    B20NM60D

    Abstract: JESD97 STB20NM60D
    Text: STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS on ID Pw STB20NM60D 600V <0.29Ω 20A 45W • High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge


    Original
    PDF STB20NM60D B20NM60D JESD97 STB20NM60D

    Untitled

    Abstract: No abstract text available
    Text: AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing


    Original
    PDF AOT20N60/AOTF20N60 AOT20N60 AOTF20N60 AOT20N60L AOTF20N60L O-220F O-220 AOTF20N60