N-CHANNEL 800V 9A Search Results

P10NK80ZFP

Abstract: P10NK80 p10nk80z w10nk80z STW10NK80Z p10nk p10nk80zfp equivalent STP10NK80ZFP N-channel MOSFET to-247 w10nk80
Contextual Info: STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STP10NK80Z 800V <0.90Ω 9A 160 W STW10NK80Z 800V <0.90Ω 9A 160 w STP10NK80ZFP 800V <0.90Ω

SSH8N80A

Contextual Info: N-CHANNEL POWER MOSFET SSH8N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V

STW9NB80

Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

diode PR 93A

Abstract: isd 2100 STW9NB80
Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

8N80

Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 IXFH8N80 125OC 08N80 diode A2 9
Contextual Info: Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS

MOSFET 800V 3A

Abstract: STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram
Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V < 1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: Preliminary Data Sheet VDSS TM HiPerFET Power MOSFETs IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS

W18NK80Z

Abstract: w18nk80 mosfet w18nk80z STW18NK80Z JESD97 w18nk 920 diode zener
Contextual Info: STW18NK80Z N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW18NK80Z 800V <0.38Ω 19A 350W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

8n80

Contextual Info: HiPerFETTM Power MOSFETs IXFH8N80 IXFH9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS ID25 RDS on trr 800V 800V 8A 9A 1.1W 0.9W 250 ns 250 ns TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V

W18NK80Z

Abstract: w18nk80 mosfet w18nk80z w18nk STW18NK80Z JESD97
Contextual Info: STW18NK80Z N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW18NK80Z 800V <0.38Ω 19A 350W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

8N80

Abstract: 9n80
Contextual Info: □ IXYS Preliminary Data Sheet HiPerFET Power MOSFETs IXFH8N80 IXFH9N80 D V DSS ^D25 800V 800V 8A 9A DS on % 0.9Q. 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family TO-247 AD (IXFH) Maximum Ratings Symbol TestConditions V DSS

Contextual Info: O D O S A dvanced P ow er Te c h n o l o g y * APT801R2BNR APT801R4BNR 800V 9.0A 1.2012 800V 8.5A 1.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced O D O P O W E Ii Te c h n o l o g y APT801R2BNR 800V 9.0A 1.20Í2 APT801R4BNR 800V 8.5A 1.40Q S POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS APT801R2BNR Parameter 800 Drain-Source Voltage

9N80

Abstract: UC 493
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N80 Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N80 Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

801R4BN

Contextual Info: S F O D ò s f f it v A dvanced P ow er Te c h n o l o g y APT801R2BNR APT801R4BNR / / / / , i mos n 800V 9.0A 1.200 800V 8.SA 1.400 UIS RATED i N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: Preliminary Data Sheet v HiPerFET Power MOSFETs D DSS 800V 800V N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on 8A 9A 1.1Q 0.9 Q. K 250 ns 250 ns ?D G TO-247 AD (IXFH) As Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C

96527

Abstract: 9N80 8n80
Contextual Info: OIXYS VDSS HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 DS on tr r 800V 8A 1.1Q 250ns 800V 9A 0.9ß 250ns TO-247 AD (IXFH) Preliminary data f D(TAB) Symbol Test Conditions v'DSS T j =25°C to150°C

UC 493

Abstract: 9N80
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

9N80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a

2SK2649-01R

Contextual Info: 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

Contextual Info: 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

2SK2649-01R

Contextual Info: 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

Contextual Info: 2SK2648-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators